Parametric design study for minimized warpage of WL-CSP

Hong, Jimin; Gao, Shan; Park, Seoungwook; Moon, SeonHee; Baek, Jonghwan; Choi, Sang‐Hoon; Yi, Sung

doi:10.1109/estc.2008.4684347

Cited by 4 publications

(1 citation statement)

References 4 publications

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“…Bonding pressure increased can enhance the bonding strength, however, bonding pressure will be a no more than a certain value ,or excessive bonding pressure result in excessive stress. The capillary's amplitude determine the size of the energy transmitting when the frequency maintained unchanged in the gold bonding process [6]. In this paper, the change of amplitude is used to measuring the size of ultrasonic energy, and the correspondence between the amplitude and the ultrasonic energy show in Table 1 .…”

Section: The Results Of the Three-dimensional Finite Element Simulati...mentioning

confidence: 99%

Finite Element Analysis of Gold Bonding under Different Loading Conditions

Tang

Huang

et al. 2014

AMM

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In this paper, ANSYS-LSDYNA simulation software is used to build the three-dimensional finite element model of the ball bond and to get the Von Mises stress. The change of stress about the bump is researched which base on the model in different bonding pressure, bonding power and bonding time. The result show that: The stress increase with bonding pressure increase within a certain bonding pressure range, and then the stress will maintain a table number, however, the stress will continue to increase when the bonding pressure reach a certain value; increasing the bonding power, the area of lager stress will grow; prolonging the bonding time, the stress of the pad will increase with time, but when time increase to a certain value, the stress of the pad will not increase over time.

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Section: The Results Of the Three-dimensional Finite Element Simulati...mentioning

confidence: 99%

Finite Element Analysis of Gold Bonding under Different Loading Conditions

Tang

Huang

et al. 2014

AMM

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Electronic Packaging Enhancement Engineered by Reducing the Bonding Temperature via Modified Cure Cycles

Park

Kim

et al. 2023

ACS Appl. Mater. Interfaces

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Semiconductor packaging continues to reduce in thickness following the overall thinning of electronic devices such as smartphones and tablets. As the package becomes thinner, the warpage of the semiconductor package becomes more important due to the reduced bending stiffness and driven by thermal residual stresses and thermal expansion mismatch during the epoxy molding compound (EMC) curing to create the package. To address this packaging reliability issue, in this study, we developed a modified cure cycle that adds a rapid cooling step to the conventional cure cycle (CCC) to enhance the reliability of the EMC molded to a copper substrate (EMC/Cu bi-layer package) by lowering the bonding temperature of the EMC/Cu bi-layer package. Modeling of the package via Timoshenko theory including effective cure shrinkage allowed the rapid cooling step to be quantified and confirmed via experiments. The modified cure cycle resulted in a 26% reduction in residual strain, a 27% reduction in curvature, and a 40% increase in peel strength compared to the CCC, suggesting that this is an effective new method for managing warping effects in such packaged structures.

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Recent Progress of TGV Technology for High Performance Semiconductor Packaging

Seok,

Jung

2024

J Weld Join

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In recent semiconductor packaging, the adoption of through silicon via (TSV) technology has become crucial for the integration of 2.5 and 3D Si chips, and interposers. The TSV offers significant advantages including high interconnect density, shortened signal pathways, and improved electrical performance. However, challenges such as electrical loss, substrate warpage, and high manufacturing costs are associated with TSV implementation. In contrast, glass-based through-glass vias (TGVs) exhibit promising characteristics such as excellent insulation properties, cost-effectiveness, and variable coefficient of thermal expansion (CTE) values that mitigate warpage in stacked devices. Moreover, they facilitate miniaturization and support high-frequency applications. This paper provides an overview of recent advancements in glass substrate, TGV drilling techniques, functional layer depositions, and Cu-filling processes in semiconductor packaging evolution.

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Parametric design study for minimized warpage of WL-CSP

Cited by 4 publications

References 4 publications

Finite Element Analysis of Gold Bonding under Different Loading Conditions

Finite Element Analysis of Gold Bonding under Different Loading Conditions

Electronic Packaging Enhancement Engineered by Reducing the Bonding Temperature via Modified Cure Cycles

Recent Progress of TGV Technology for High Performance Semiconductor Packaging

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