Parametric investigation of the formation of epitaxial Ti3SiC2 on 4H-SiC from Al-Ti annealing

Abi-Tannous, Tony; Soueidan, Maher; Ferro, Gabriel; Lazar, Mihai; Toury, Bérangère; Beaufort, M. F.; Barbot, J. F.; Penuelas, Jose; Planson, Dominique

doi:10.1016/j.apsusc.2015.04.077

Cited by 22 publications

(11 citation statements)

References 30 publications

(55 reference statements)

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“…For the purpose of thin-film synthesis, these reactions can be categorized into two groups: one based on interdiffusion processes between a film and a substrate during post-deposition thermal annealing and the other based on reaction processes inside the film itself. For MAX phases, the most well-known example of the first category of reactions is Ti 3 SiC 2 synthesized by annealing of Ti-based contacts deposited onto SiC substrates, to form ohmic contacts in SiC-based semiconductor devices [16,17,18,19,20,21,22,23]. The second category is deposition of a film containing the three elements M, A, and X in a metastable state, e.g., amorphous [24,25,26] or an artificial multilayer [27,28,29,30], followed by annealing above the deposition temperature, to initiate transformation to the MAX phase.…”

Section: For a Detailed Discussion)mentioning

confidence: 99%

Ti 2 AlN thin films synthesized by annealing of (Ti+Al)/AlN multilayers

Cabioc’h

Alkazaz

Beaufort

et al. 2016

Materials Research Bulletin

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Single-phase Ti 2 AlN thin films were obtained by annealing in vacuum of (Ti+Al)/AlN multilayers deposited at room temperature by magnetron sputtering onto single-crystalline (0001) 4H-SiC and (0001) Al 2 O 3 substrates. In-situ X-ray diffraction experiments combined with ex-situ crosssectional transmission electron microscopy observations reveal that interdiffusion processes occur in the multilayer at a temperature of ~400°C leading to the formation of a (Ti,Al,N) solid solution, having the hexagonal structure of -Ti, whereas the formation of Ti 2 AlN occurs at 550-600°C. Highly oriented (0002) Ti 2 AlN thin films can be obtained after an annealing at 750°C.

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Section: For a Detailed Discussion)mentioning

confidence: 99%

Ti 2 AlN thin films synthesized by annealing of (Ti+Al)/AlN multilayers

Cabioc’h

Alkazaz

Beaufort

et al. 2016

Materials Research Bulletin

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“…Comparing with the results obtained using Al-based contacts, Al plays the role of a liquid-phase promoter, leading to a less damaged interface. For more details about the interfacial reaction, the reader is referred to [18].…”

Section: A Identification Of Reaction Productsmentioning

confidence: 99%

“…For ohmic contact formation, high-temperature annealing was performed in a rapid thermal annealing (RTA) furnace under argon at atmospheric pressure with advanced backing steps (three times pumping followed by argon filling) before the annealing in order to decrease the residual oxygen concentration in the RTA chamber. The beneficial effect of such baking steps is described in [18] and [19]. The annealing temperature was varied from 900°C to 1200°C for a 10 min plateau and a heating rate of 20°C/s.…”

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confidence: 99%

A Study on the Temperature of Ohmic Contact to p-Type SiC Based on Ti₃SiC₂Phase

Abi-Tannous

Soueidan

Ferro

et al. 2016

IEEE Trans. Electron Devices

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In this paper, the electrical properties of Ti 3 SiC 2 -based ohmic contacts formed on p-type 4H-SiC were studied. The growth of Ti 3 SiC 2 thin films were studied onto 4H-SiC substrates by thermal annealing of Ti-Al layers deposited by magnetron sputtering. In this study, we varied the concentrations of Ti and Al (Ti 20 Al 80 , Ti 30 Al 70 , Ti 50 Al 50 , and Ti), and the annealing temperature from 900°C to 1200°C for each concentration. X-ray diffraction and transmission electron microscopy analyzes were performed on the samples to determine the microstructure of the annealed layers and to further investigate the compounds formed after annealing. Using the transfer length method structures, the specific contact resistance (SCR) at room temperature of all contacts was measured. The temperature dependence up to 600°C of the SCR of the best contacts was studied to understand the current mechanisms at the Ti 3 SiC 2 /SiC interface. The experimental results are in agreement with the thermionic field emission theory. With this model, the barrier height of the contact varies between 0.71 and 0.85 eV. Finally, ageing tests showed that Ti3SiC2-based contacts were stable and reliable up to 400 h at 600°C under Ar.Index Terms-Ohmic contact, silicon carbide (SiC), thermionic field emission (TFE), Ti-Al alloy, Ti 3 SiC 2 .

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“…It is interesting to compare these reactions to the one proposed in [37] for the formation of Ti3SiC2 during the 1000°C rapid thermal annealing:…”

Section: Chemical Analysismentioning

confidence: 99%

Stable and reliable ohmic contact on p-type 4H-SiC up to 1500 h of aging at 600 °C

Hamad

Tannous

Soueidan

et al. 2020

Microelectronics Reliability

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The stability and reliability at high temperature of Ti3SiC2 based ohmic contacts on ptype 4H-SiC (0001) 4°-off substrates were studied. The contact was grown from Ti100-xAlx alloys annealed at high temperature (from 900°C to 1200°C). The Specific Contact Resistance (SCR) at room temperature and at high temperature (up to 600°C) was in the 10 -4 -10 -5 Ω.cm 2 range. A Schottky barrier height of 0.71 to 0.85 eV was calculated for the set of samples. After aging period at 600°C for 1500h, the SCR was very stable for Al contents x < 80 at%. This was correlated with chemical and physical stability of these contacts, where the residual stress located on 4H-SiC/Ti3SiC2 interface decreased after aging, for which the Ti3SiC2 phase was preserved. Whereas, in the case of x = 80 at%, the Ti3SiC2 phase disappeared and the contacts were not ohmic anymore after long time aging. The obtained results showed that Ti3SiC2/4H-SiC system is thermodynamically stable at high temperatures and can therefore be a good candidate, with high potential, for high power and high temperature electronic applications.

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Parametric investigation of the formation of epitaxial Ti3SiC2 on 4H-SiC from Al-Ti annealing

Cited by 22 publications

References 30 publications

Ti 2 AlN thin films synthesized by annealing of (Ti+Al)/AlN multilayers

Ti 2 AlN thin films synthesized by annealing of (Ti+Al)/AlN multilayers

A Study on the Temperature of Ohmic Contact to p-Type SiC Based on Ti₃SiC₂Phase

Stable and reliable ohmic contact on p-type 4H-SiC up to 1500 h of aging at 600 °C

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Parametric investigation of the formation of epitaxial Ti3SiC2 on 4H-SiC from Al-Ti annealing

Cited by 22 publications

References 30 publications

Ti 2 AlN thin films synthesized by annealing of (Ti+Al)/AlN multilayers

Ti 2 AlN thin films synthesized by annealing of (Ti+Al)/AlN multilayers

A Study on the Temperature of Ohmic Contact to p-Type SiC Based on Ti3SiC2Phase

Stable and reliable ohmic contact on p-type 4H-SiC up to 1500 h of aging at 600 °C

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A Study on the Temperature of Ohmic Contact to p-Type SiC Based on Ti₃SiC₂Phase