Part I: On the Behavior of STI-Type DeNMOS Device Under ESD Conditions

Abstract

Abstract-We present experimental and simulation studies of shallow trench isolation (STI)-type drain-extended n-channel metal-oxide-semiconductor devices under human body model (HBM)-like electrostatic discharge (ESD) conditions. Physical insight toward pulse-to-pulse instability is given. Both the current (I TLP ) and time evolution of various events such as junction breakdown, parasitic bipolar triggering, and the base push-out effect are discussed in detail. Differences between the 2-D and 3-D simulation (modeling) approaches are presented, and the importance of 3-D technology-computer-aided-design-based modeling is discussed. Furthermore, a deeper physical insight toward the base push-out is given, which shows significant power dissipation due of space charge build-up, which is found at the onset of self-heating in the 2-D plane. Index Terms-Base

Part II: On the Three-Dimensional Filamentation and Failure Modeling of STI Type DeNMOS Device Under Various ESD Conditions

“…In Part I [10], we have also seen (Fig. 5) improvement in failure threshold by extending n + drain diffusion (DL = 2.2 μm) and drain contact (no change in ballast resistance) all over the drain diffusion.…”

“…5 shows the (a) current density, (b) electric field, and (c) impact ionization contours for a modified device (DL = 2.2 μm) at a higher TLP current (i.e., 2 mA/μm). The modified device fails at 2.5 mA/μm [10], whereas, from Fig. 5, an efficient bipolar triggering is evident, without any device failure.…”

Characteristics of Tunnel Field-effect Transistors under Power-on Electrostatic Discharge and Electrical Overstress Conditions

“…Since the thermal diffusion length of silicon devices for 100 ns ESD simulation is approximately 3 μm, the substrate thickness T Sub is chosen to be 3 μm. (15) All the four terminals, namely, the substrate, source, drain, and gate, are used as a heat sink. The surrounding temperature of the device is set as 300 K.…”