Past and Future Technology for Mixed Signal LSI

Hatasako, K.; Nitta, T.; Hane, M.; Maegawa, Satoru

doi:10.1587/transele.e97.c.238

Cited by 5 publications

(3 citation statements)

References 10 publications

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“…[ 43 ] Among them, amorphous indium‐gallium‐zinc‐oxide (a‐IGZO) TFTs formed through sputtering are representative and are widely used in the industry because large areas can be processed efficiently and the TFTs have high mobility. [ 44 ] However, the sputtering process used to make most of the a‐IGZO TFTs minimizes damage to the insulating layer that can occur during the sputtering process. This damage necessitates post‐annealing at a high temperature to reduce the number of defects formed during the process.…”

Section: Resultsmentioning

confidence: 99%

Printable Ultra‐Flexible Fluorinated Organic–Inorganic Nanohybrid Sol–Gel Derived Gate Dielectrics for Highly Stable Organic Thin‐Film Transistors and Other Practical Applications

Kwon

Baek

et al. 2020

Adv Funct Materials

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A novel fluorinated organic–inorganic (O–I) hybrid sol—gel based material, named FAGPTi, is successfully synthesized and applied as a gate dielectric in flexible organic thin‐film transistors (OTFTs). The previously reported three‐arm‐shaped alkoxysilane‐functionalized amphiphilic polymer yields a stable O–I hybrid material consisting of uniformly dispersed nanoparticles in the sol‐state. Here, a fluorinated precursor is introduced into the system, making it possible to realize more stable spherical composites. This results in long‐term colloidal stability (≈1.5 years) because composite growth is strongly inhibited by the presence of fluorine groups with intrinsically strong repulsive forces. Additionally, the FAGPTi film is easily deposited via thermally annealed sol–gel reactions; the films can be successfully fabricated through the printing method, and exhibit excellent flexibility and enhanced insulating properties compared to existing materials. OTFTs with FAGPTi layers show highly stable driving characteristics under severe bending conditions (1.9% strain). Integrated logic devices are also successfully operated with these OTFTs. Additionally, it can facilely be applied to amorphous indium‐gallium‐zinc‐oxide (a‐IGZO) TFT devices other than OTFT. Therefore, this synthetic strategy can provide useful insights into the production of functional O–I hybrid materials, enabling the efficient fabrication of electronic materials and devices exhibiting these properties.

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Section: Resultsmentioning

confidence: 99%

Printable Ultra‐Flexible Fluorinated Organic–Inorganic Nanohybrid Sol–Gel Derived Gate Dielectrics for Highly Stable Organic Thin‐Film Transistors and Other Practical Applications

Kwon

Baek

et al. 2020

Adv Funct Materials

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“…I N RECENT years, the amorphous oxide semiconductor thin film transistors (TFTs) based on indium-gallium-zincoxide (IGZO) have been regarded as the most promising candidates for active matrix organic light emitting display (AMOLED) pixel arrays [1] and large scale integrated circuit (LSI) [2] owing to their high performance, applicability to large-scaled substrate and compatibility with the conventional a-Si TFT. So far, magnetron sputtering is the standard technique to fabricate a-IGZO channel layer due to its advantage of low temperature process, and high quality of reproducibility.…”

Section: Introductionmentioning

confidence: 99%

Low-Temperature, High-Performance InGaZnO Thin-Film Transistors Fabricated by Capacitive Coupled Plasma-Assistant Magnetron Sputtering

Liu

Sun

Qin

et al. 2019

IEEE Electron Device Lett.

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This letter demonstrates a novel approach to fabricate the high-performance a-InGaZnO thin-film transistors via using the capacitive coupled plasma-assistant magnetron sputtering with low post annealing temperature (100 • C). The influence of radio frequency generated plasma power during the a-InGaZnO deposition has been intensively investigated. With the plasma-assistant magnetron sputtering at room temperature, the best thin-film transistor exhibits a high mobility of 26.03 cm 2 /Vs, a threshold voltage of 2 V, a subthreshold swing of 0.33 V/decade, and I ON /I OFF of more than 10 7. The proposed capacitive coupled plasma-assistant magnetron sputtering fabrication process in this letter could be a potential approach to be applied for the flexible electronic devices. Index Terms-Capacitive coupled plasma assistant magnetron sputtering, low temperature, high performance, a-IGZO, thin film transistors.

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“…Recently, electronic devices and components require high efficiency energy saving types due to environmental problems and energy supply problems. 1,2) Thus power devices and LSI are becoming important research issues because they are an important part of creating an energy saving society. As CMOS technology shrink, power supply voltages are reduced to ∼1 V for low power consumption, but many devices such as automotive electronics, displays and consumer electronics still require high-voltage operation.…”

Section: Introductionmentioning

confidence: 99%

Operation of basic logic element in 3D structure using BEOL transistors with In–Zn–O channel offset for power management integration circuit

Kang

Cho

2019

Jpn. J. Appl. Phys.

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In this study, we fabricated back-end of line (BEOL) transistors with Cu gate electrodes, Si3N4/SiO2 interlayer dielectric gate insulators, and In–Zn–O (IZO) channel structures. A BEOL thin film transistor capable of operating at a high voltage and a resistor type (R-type) logic device capable of operating the inverter by applying a drain offset have been proposed. We performed low temperature annealing at 350 °C to prevent damage to front-end of line devices. As a result, IZO BEOL TFTs with a drain offset structure exhibited excellent performance, long-term reliability and stability at high voltage. In addition, by using drain channel offset as a resistor, we were able to fabricate R-type inverters and level shifters. Therefore, IZO BEOL TFTs with drain offset channel allow monolithic three-dimensional integration of the transistor into the BEOL of silicon wafers for power management integration circuits and functional circuit device applications.

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Past and Future Technology for Mixed Signal LSI

Cited by 5 publications

References 10 publications

Printable Ultra‐Flexible Fluorinated Organic–Inorganic Nanohybrid Sol–Gel Derived Gate Dielectrics for Highly Stable Organic Thin‐Film Transistors and Other Practical Applications

Printable Ultra‐Flexible Fluorinated Organic–Inorganic Nanohybrid Sol–Gel Derived Gate Dielectrics for Highly Stable Organic Thin‐Film Transistors and Other Practical Applications

Low-Temperature, High-Performance InGaZnO Thin-Film Transistors Fabricated by Capacitive Coupled Plasma-Assistant Magnetron Sputtering

Operation of basic logic element in 3D structure using BEOL transistors with In–Zn–O channel offset for power management integration circuit

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