Pendeo-epitaxial growth of thin films of gallium nitride and related materials and their characterization

Davis, R. F.; Gehrke, Thomas; Linthicum, K. J.; Zheleva, T.; Preble, E.A.; Rajagopal, P.; Zorman, Christian A.; Mehregany, Mehran

doi:10.1016/s0022-0248(01)00836-3

Cited by 60 publications

(41 citation statements)

References 18 publications

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“…The dislocation density, however, constitutes a serious limitation for the electron mobility and the efficiency of radiative recombination, and may cause other problems related to the device performance and operating lifetime. The dislocation density can be decreased into the 10 7 cm Ϫ2 range by means of sophisticated techniques, such as epitaxial lateral overgrowth ͑ELO͒ 1 and pendeoepitaxy, 2 which have been developed in the last decade. Alternatively, a reduction of the dislocation density can be achieved by homoepitaxial growth of GaN.…”

Section: Introductionmentioning

confidence: 99%

Strain-free bulk-like GaN grown by hydride-vapor-phase-epitaxy on two-step epitaxial lateral overgrown GaN template

Gogova

Kasic

Larsson

et al. 2004

Journal of Applied Physics

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Articles you may be interested inTime-resolved photoluminescence, positron annihilation, and Al0.23Ga0.77N/GaN heterostructure growth studies on low defect density polar and nonpolar freestanding GaN substrates grown by hydride vapor phase epitaxy J. Appl. Phys. 111, 103518 (2012) Crack-free bulk-like GaN with high crystalline quality has been obtained by hydride-vapor-phase-epitaxy ͑HVPE͒ growth on a two-step epitaxial lateral overgrown GaN template on sapphire. During the cooling down stage, the as-grown 270-m-thick GaN layer was self-separated from the sapphire substrate. Plan-view transmission electron microscopy images show the dislocation density of the free-standing HVPE-GaN to be ϳ2.5ϫ10 7 cm Ϫ2 on the Ga-polar face. A low Ga vacancy related defect concentration of about 8ϫ10 15 cm Ϫ3 is extracted from positron annihilation spectroscopy data. The residual stress and the crystalline quality of the material are studied by two complementary techniques. Low-temperature photoluminescence spectra show the main neutral donor bound exciton line to be composed of a doublet structure at 3.4715 ͑3.4712͒ eV and 3.4721 ͑3.4718͒ eV for the Ga-͑N-͒ polar face with the higher-energy component dominating. These line positions suggest virtually strain-free material on both surfaces with high crystalline quality as indicated by the small full width at half maximum values of the donor bound exciton lines. The E 1 (TO) phonon mode position measured at 558.52 cm Ϫ1 ͑Ga face͒ by infrared spectroscopic ellipsometry confirms the small residual stress in the material, which is hence well suited to act as a lattice-constant and thermal-expansion-coefficient matched substrate for further homoepitaxy, as needed for high-quality III-nitride device applications.

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Section: Introductionmentioning

confidence: 99%

Strain-free bulk-like GaN grown by hydride-vapor-phase-epitaxy on two-step epitaxial lateral overgrown GaN template

Gogova

Kasic

Larsson

et al. 2004

Journal of Applied Physics

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“…Thus enhanced light emitting diodes (LED) with relatively high output power were fabricated from InGaN [27] and GaN [28] on sapphire patterned substrates. However, real progress in LED technology was achieved after discoveries of techniques such as Epitaxial Lateral Overgrowth (ELO) [29,30] and PENDEO (from Latin: to hang or to be suspended) epitaxy [30,31]. In these cases the deposition of a buffer layer is worthwhile because it absorbs the strain built in the growing material and blocks some of the treading dislocations.…”

Section: Pendeo and Elo Epitaxymentioning

confidence: 99%

Heteroepitaxy, an Amazing Contribution of Crystal Growth to the World of Optics and Electronics

Tassev

2017

Crystals

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Advances in Electronics and Optics are often preceded by discoveries in Crystal Growth theory and practice. This article represents in retrospect some of the most significant contributions of heteroepitaxy in these and some other areas-the strong impact of the three modes of heteroepitaxy on microelectronics and quantum optics, the big "push" of PENDEO epitaxy in development of Light Emitting Diodes, etc. A large part of the text is dedicated to heteroepitaxy of nonlinear optical materials grown on orientation-patterned templates and used in the development of new quasi-phase-matching frequency conversion laser sources. By achieving new frequency ranges such sources will result in a wide variety of applications in areas such as defense, security, industry, medicine, and science. Interesting facts from the scientific life of major contributors in the field are mixed in the text with fine details from growth experiments, chemical equations, results from material characterizations and some optical and crystallographic considerations-all these presented in a popular way but without neglecting their scientific importance and depth. The truth is that often heteroepitaxy is not just the better but the only available option. The truth is that delays in device development are usually due to gaps in materials research. In all this, miscommunication between different scientific communities always costs vain efforts, uncertainty, and years of going in a wrong scientific direction. With this article we aim to stimulate a constructive dialog that could lead to solutions of important interdisciplinary scientific and technical issues.

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“…The densities in the GaN template layers are reported to be in the 10 8 cm À2 range for a-type dislocations with Burgers vector b ¼ 1 3 h1 12 0i and a+c-type dislocations with Burgers vector b ¼ 1 3 h1 12 3i, whereas the density of c-type dislocations with Burgers vector b ¼ h0 0 0 1ican approach the 10 7 cm À2 range at best [11]. Various advanced techniques, such as FIELO [12], FACE-LO [13], Pendeo-Epitaxy [14] and mass transport techniques [15], were contrived to obtain lowdislocation-density GaN crystal. Complicated microstructures, such as wing tilting, 901 bending of TDs, and generation of horizontal dislocations (HDs) have been reported in the GaN layers by the above techniques [16,17].…”

Section: Introductionmentioning

confidence: 99%

Three-dimensional microstructural characterization of GaN nonplanar substrate laterally epitaxially overgrown by metalorganic chemical vapor deposition

Zhou

Ren

Dapkus

2005

Journal of Crystal Growth

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Pendeo-epitaxial growth of thin films of gallium nitride and related materials and their characterization

Cited by 60 publications

References 18 publications

Strain-free bulk-like GaN grown by hydride-vapor-phase-epitaxy on two-step epitaxial lateral overgrown GaN template

Strain-free bulk-like GaN grown by hydride-vapor-phase-epitaxy on two-step epitaxial lateral overgrown GaN template

Heteroepitaxy, an Amazing Contribution of Crystal Growth to the World of Optics and Electronics

Three-dimensional microstructural characterization of GaN nonplanar substrate laterally epitaxially overgrown by metalorganic chemical vapor deposition

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