Pentacene-based metal-insulator-semiconductor memory structures utilizing single walled carbon nanotubes as a nanofloating gate

Sleiman, Adam; Rosamond, Mark C.; Alba, María; Ayesh, Ahmad I.; Ghaferi, Amal Al; Gallant, Andrew J.; Mabrook, M.F.; Zeze, Dagou A.

doi:10.1063/1.3675856

Cited by 23 publications

(10 citation statements)

References 17 publications

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“…The capacitance at the flat-band voltage can be used to determine the intrinsic doping concentration (N a ) of the applied semiconductor (Si in our case) from the following equation 34 :…”

Section: Reference Devicementioning

confidence: 99%

Electrical Characteristics of Hybrid-Organic Memory Devices Based on Au Nanoparticles

Nejm

Ayesh

Zeze

et al. 2015

Journal of Elec Materi

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We report on the fabrication and characterization of hybrid-organic memory devices based on gold (Au) nanoparticles that utilize metal-insulator-semiconductor structure. Au nanoparticles were produced by sputtering and inertgas condensation inside an ultrahigh-vacuum compatible system. The nanoparticles were self-assembled on a silicon dioxide (SiO 2 )/silicon (Si) substrate, then coated with a poly(methyl methacrylate) (PMMA) insulating layer. Aluminum (Al) electrodes were deposited by thermal evaporation on the Si substrate and the PMMA layer to create a capacitor. The nanoparticles worked as charge storage elements, while the PMMA is the capacitor insulator. The capacitance-voltage (C-V) characteristics of the fabricated devices showed a clockwise hysteresis with a memory window of 3.4 V, indicative of electron injection from the top Al electrode through the PMMA layer into Au nanoparticles. Charge retention was measured at the stress voltage, demonstrating that the devices retain 94% of the charge stored after 3 h of continuous testing.

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“…The capacitance at the flat-band voltage can be used to determine the intrinsic doping concentration (N a ) of the applied semiconductor (Si in our case) from the following equation 34 :…”

Section: Reference Devicementioning

confidence: 99%

Electrical Characteristics of Hybrid-Organic Memory Devices Based on Au Nanoparticles

Nejm

Ayesh

Zeze

et al. 2015

Journal of Elec Materi

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“…5,6 Moreover, the fact that single-walled carbon nanotubes (SWCNTs) can serve as stable organic charge storage nodes inside an organic insulator (such as polymethylmethacrylate, PMMA) makes it attractive in flexible and organic electronics applications. 7 Previous efforts in integrating organic nanocomposites such as [6,6]-phenyl-C85 butyric acid methyl ester (PCBM) (Ref. 8) and graphene 9 as charge traps in OBDs were attractive due to the simplicity of the structure and their easy fabrication methods.…”

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confidence: 99%

Organic bistable devices utilizing carbon nanotubes embedded in poly(methyl methacrylate)

Sleiman

Mabrook

Nejm

et al. 2012

Journal of Applied Physics

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The electrical and memory behavior of organic bistable memory devices in the form of metal-embedded insulator-metal (MIM) structure are described. The devices utilize layer-by-layer (LbL) deposited single walled carbon nanotubes (SWCNTs) as charge traps embedded between two polymethylmethacrylate (PMMA) insulating layers. The stack was sandwiched between two aluminium electrodes to form an Al/PMMA/SWCNTs/PMMA/Al structure. The current-voltage (I-V) characteristics of the devices exhibit electrical bistability and non-volatile memory characteristics in terms of switching between high conductive (ON) and low conductive (OFF) states. The different conductive states were programmed by application of a positive and negative voltage pulse for the ON and OFF states, respectively. A maximum ON/OFF ratio of 2 × 105 is achieved at low reading voltage of 1 V. Space-charge-limited-current (SCLC) conduction model was used to describe the carriers transport and the electrical bistability in the devices, which was attributed to the trapping and detrapping of electrons inside the SWCNTs.

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“…One of the primary components in electronic systems with a complete data processing functionality is the memory unit. A variety of binary data storage devices have been reported using CNTs as small-scale electrodes in resistive or phase change memory, 6,7) as charge storage nodes in floating gate transistors or metal-insulator-semiconductor capacitors, [8][9][10] and as active channels in hysteretic FETs. 11,12) Among these reported devices, hysteretic CNT-FETs can be integrated as memory elements in CNT-based electronic systems because FETs are the primary constituent parts of an electronic circuit.…”

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confidence: 99%

Demonstration of nonvolatile multilevel memory in ambipolar carbon nanotube thin-film transistors

Li¹,

Li²,

Jin³

et al. 2015

Appl. Phys. Express

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Multilevel memories have attracted significant interest because of their larger memory density per unit cell. Here, we investigated multilevel operation with ambipolar carbon nanotube thin-film transistors. Three distinct conduction states and a direct change between any of them were demonstrated by selecting appropriate values for the magnitude and duration of each program/erase voltage pulse. A low operation voltage of 5 V and a short duration of 1 s were obtained by utilizing a bilayer Al 2 O 3 -epoxy dielectric to enhance the gate modulation efficiency. A tradeoff exists between low-voltage operation and fast switching for a given device.

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Pentacene-based metal-insulator-semiconductor memory structures utilizing single walled carbon nanotubes as a nanofloating gate

Cited by 23 publications

References 17 publications

Electrical Characteristics of Hybrid-Organic Memory Devices Based on Au Nanoparticles

Electrical Characteristics of Hybrid-Organic Memory Devices Based on Au Nanoparticles

Organic bistable devices utilizing carbon nanotubes embedded in poly(methyl methacrylate)

Demonstration of nonvolatile multilevel memory in ambipolar carbon nanotube thin-film transistors

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