Perfluorodecyltrichlorosilane-based seed-layer for improved chemical vapour deposition of ultrathin hafnium dioxide films on graphene

Kitzmann, Julia; Göritz, Alexander; Fraschke, Mirko; Lukosius, M.; Wenger, Christian; Wolff, A.; Łupina, Grzegorz

doi:10.1038/srep29223

Cited by 14 publications

(10 citation statements)

References 32 publications

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“…Although not investigated, it is suggested that damage to the graphene is prevented by the non‐covalent bonding of the PTCA to the graphene. Along with PTCA several other SAMs have been used to obtain uniform Al 2 O 3, HfO 2 and ZnO layers on graphene such as perylene‐3,4,9,10‐te tracarboxylic dianhydride (PTCDA), perfluorodecyltrichlorosilane (FDTS), and 4‐mercaptophenol (4MP) . The use of Hexamethyldisilazane (HMDS) as a seed‐layer led to the deposition of non‐uniform Al 2 O 3 films, possibly because of the hydrophobic nature of the functional groups, which decreased the adsorption of H 2 O on the HDMS treated graphene surface.…”

Section: Uniform Ald On Graphene Through Surface Preparationmentioning

confidence: 99%

Atomic Layer Deposition for Graphene Device Integration

Vervuurt

Kessels

Bol

2017

Adv Materials Inter

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Graphene is a two dimensional material with extraordinary properties, which make it an interesting material for many optical and electronic devices. The integration of graphene in these devices often requires the deposition of thin dielectric layers on top of graphene. Atomic layer deposition (ALD) is the method of choice to deposit these layers due to its ability to deposit ultra‐thin, high quality films with sub‐monolayer thickness control. ALD on graphene however, is a challenge due to the lack of reactive surface sites on graphene. This leads to the selective growth on grain boundaries, wrinkles and defect sites present in the graphene. In this review an overview of the different methods to achieve uniform deposition of ALD on graphene is presented. The advantages and disadvantages of each method are discussed from the perspective of ALD together with the opportunities for further research. Special emphasis is given to the recent advancements in the understanding of the ALD process conditions and their influence on the deposition uniformity on graphene. Particularly, improving the quality of the dielectric layers deposited by ALD while maintaining the pristine properties of graphene, will prove vital for the device integration of graphene.

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Section: Uniform Ald On Graphene Through Surface Preparationmentioning

confidence: 99%

Atomic Layer Deposition for Graphene Device Integration

Vervuurt

Kessels

Bol

2017

Adv Materials Inter

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“…However, due to weak out-of-plane interactions in graphene, achieving a high quality 2D--3D interface is a challenge which must be addressed to realise device integration with common dielectrics. Growth of ALD dielectric films on graphene is commonly achieved through an additional ex situ process step to promote nucleation, typically including deposition of an additional seed layer such as thin polymer [17,18], metal/oxide [10,19,20] films, or other surface functionalisation pretreatments [21][22][23][24]. Such ex situ treatments may include timeconsuming additional process steps, can degrade the quality of the graphene [20] and crucially may compromise the quality of the interface by introducing additional surface states.…”

mentioning

confidence: 99%

Encapsulation of graphene transistors and vertical device integration by interface engineering with atomic layer deposited oxide

et al. 2016

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We demonstrate a simple, scalable approach to achieve encapsulated graphene transistors with negligible gate hysteresis, low doping levels and enhanced mobility compared to as-fabricated devices. We engineer the interface between graphene and atomic layer deposited (ALD) Al 2 O 3 by tailoring the growth parameters to achieve effective device encapsulation whilst enabling the passivation of charge traps in the underlying gate dielectric. We relate the passivation of charge trap states in the vicinity of the graphene to conformal growth of ALD oxide governed by in situ gaseous H 2 O pretreatments. We demonstrate the long term stability of such encapsulation techniques and the resulting insensitivity towards additional lithography steps to enable vertical device integration of graphene for multistacked electronics fabrication.

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“…Table 1 reports a selection of the literature results for different types of 2D materials, with the indication of the used surface activation for ALD, the deposited high-κ insulator, its thickness and uniformity, and eventual damage introduced in the 2D material by the ALD process. From the historical point of view, most of these approaches have been developed for graphene [35,37,55,56], and many of them have been adapted to other layered materials, such as TMDs [36]. These processes can be grouped into two categories:…”

Section: Methods To Promote Ald Growth On 2d Materialsmentioning

confidence: 99%

“…The seed layers can be of both an organic nature, such as self-assembled monolayers (SAM) [34,57] or spin-coated polymers layers [35,36,55], and an inorganic nature, such as sputtered or evaporated metal or metal oxide films [37][38][39]56] or SiO 2 nanoparticles [40]. They can be pre-deposited "ex situ" (i.e., outside the ALD reactor chamber) and also "in situ" (i.e., within the reactor), like in the case of low temperature H 2 O-assisted dielectric seed layer growth on the surface of graphene [41,42].…”

Section: Methods To Promote Ald Growth On 2d Materialsmentioning

confidence: 99%

Substrate-Driven Atomic Layer Deposition of High-κ Dielectrics on 2D Materials

et al. 2021

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Atomic layer deposition (ALD) of high-κ dielectrics on two-dimensional (2D) materials (including graphene and transition metal dichalcogenides) still represents a challenge due to the lack of out-of-plane bonds on the pristine surfaces of 2D materials, thus making the nucleation process highly disadvantaged. The typical methods to promote the nucleation (i.e., the predeposition of seed layers or the surface activation via chemical treatments) certainly improve the ALD growth but can affect, to some extent, the electronic properties of 2D materials and the interface with high-κ dielectrics. Hence, direct ALD on 2D materials without seed and functionalization layers remains highly desirable. In this context, a crucial role can be played by the interaction with the substrate supporting the 2D membrane. In particular, metallic substrates such as copper or gold have been found to enhance the ALD nucleation of Al2O3 and HfO2 both on monolayer (1 L) graphene and MoS2. Similarly, uniform ALD growth of Al2O3 on the surface of 1 L epitaxial graphene (EG) on SiC (0001) has been ascribed to the peculiar EG/SiC interface properties. This review provides a detailed discussion of the substrate-driven ALD growth of high-κ dielectrics on 2D materials, mainly on graphene and MoS2. The nucleation mechanism and the influence of the ALD parameters (namely the ALD temperature and cycle number) on the coverage as well as the structural and electrical properties of the deposited high-κ thin films are described. Finally, the open challenges for applications are discussed.

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Perfluorodecyltrichlorosilane-based seed-layer for improved chemical vapour deposition of ultrathin hafnium dioxide films on graphene

Cited by 14 publications

References 32 publications

Atomic Layer Deposition for Graphene Device Integration

Atomic Layer Deposition for Graphene Device Integration

Encapsulation of graphene transistors and vertical device integration by interface engineering with atomic layer deposited oxide

Substrate-Driven Atomic Layer Deposition of High-κ Dielectrics on 2D Materials

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