Performance Analysis of GAA MOSFET for Lower Technology Nodes.

Keerthana, P.; Babu, P. Praneeth; Babu, T.Ramesh; Jena, Biswajit

doi:10.25103/jestr.132.06

Cited by 11 publications

(3 citation statements)

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“…Among different multi-gate MOS devices, cylindrical gate all around MOSFET (GAA) has beaten all its competitors irrespective of the scaling and electrostatic controllability for proving itself as the workhorse of the semiconductor industry [10][11][12][13][14]. This device has proved itself as a better candidate to reduce the charge sharing between drain and source as they come closer to each other in case of continuous device scaling [15][16][17][18]. That reduces the threshold voltage and allows the device to become suitable for high-speed switching applications.…”

Section: Introductionmentioning

confidence: 99%

Development of an analytical model of work function modulated GAA MOSFET for electrostatic performance analysis

Bhol¹,

Nanda²,

Jena³

et al. 2022

Phys. Scr.

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This paper describes a continuous and almost linearly modulated work-function adjustment between 4.8-4.2eV using Hf-Mo binary alloy. The work-function modulated (WM) metal gate is applied to a gate all around MOSFET (GAA) for better electrostatic control. The threshold voltage is tuned by linearly modulating the gate metal work function. The threshold voltage extracted for dual-GAA MOSFET is initially 0.705 V. However, introducing work-function modulation, the threshold voltage is shifted to 0.620 V for WMGAA and 0.632 V for dual-WMGAA MOSFET. The simulation results validate the benefits of using work-function modulated metal gate in place of normal metal gate in terms of electron mobility, threshold voltage (Vth), and drain current (Id). An improved device performance with reduced short channel effect shows the capability of this device for various circuit applications.

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Section: Introductionmentioning

confidence: 99%

Development of an analytical model of work function modulated GAA MOSFET for electrostatic performance analysis

Bhol¹,

Nanda²,

Jena³

et al. 2022

Phys. Scr.

View full text Add to dashboard Cite

show abstract

“…As the size of transistors is scaled down the performance of the device also gets affected, and an unwanted effect like subthreshold swing (SS) called the short channel effect appears [3][4][5]. Moreover, the GAA structure provides the minimum leakage current (Ioff) with a steeper subthreshold slope [6,7]. To mitigate the short channel effect, various device structures were proposed by considering different engineering techniques such as gate and channel engineering [8].…”

Section: Introductionmentioning

confidence: 99%

Extensive Study of Position-Dependent Multi-Channel GAA MOSFET and its Effect on Device Performance

Bhol¹,

Nanda²

2022

J. Nano- Electron. Phys.

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In this paper, a simulation study is carried out for a multi-channel gate all around (GAA) MOSFET with channel separation calculation. The simulation is performed in lower technology nodes by taking the quantum effect into consideration. The insulator used in this model is a high-k dielectric, which allows the device to be scaled down. The separation between the silicon channel and its effect on device performance is investigated extensively. The performance thus obtained is compared with different channel separations in terms of drain current (ID), threshold voltage (Vth), transconductance (gm) and switching ratio (Ion/Ioff). Further, the leakage current and associated short channel effect such as subthreshold swing (SS) and its dependence on channel separation are studied in detail. An improved value of on-current of 28.9 % along with SS of 70.34 mV/dec is achieved for a separation of 10 nm. However, a switching ratio of 9.13e+08 is obtained for a separation of 6 nm which is comparatively higher than 9 and 10 nm separation.

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“…With the continuous downscaling of device dimensions to mitigate the current problems in the semiconductor industry, various device architectures are being implemented [1][2][3][4][5]. Among all those structures, GAA MOSFET has proved itself as the best candidate to overcome the problems raised by device miniaturization [6][7][8][9]. Advanced CMOS processes today perform very well not only at room temperature and above, but also at low or cryogenic temperatures.…”

Section: Introductionmentioning

confidence: 99%

Performance Analysis of Gate All Around (GAA) MOSFET at Cryogenic Temperature for the Sub-Nanometer Regime

Kumar¹,

Jena²

2021

J. Nano- Electron. Phys.

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In this work, an n-type gate all around (GAA) MOSFET with various gate lengths from 90 to 12 nm is considered for simulation. The temperature dependent simulation is carried out in order to investigate the electrical characteristics extensively. The temperature range used in this work varies from 6 to 700 K, including cryogenic temperature, and the behavior of the GAA MOSFET as a next generation semiconductor device for quantum computing systems is investigated. The implementation of a hardware-based quantum processor needs the integration of a CMOS controller and read-out interface circuit that will operate at cryogenic temperature (6 K). In this work, we investigate the critical behavior of the drain current at cryogenic temperature and normal room temperature. А comparative analysis is carried out to study the effect of temperature on the device performance. Тhe proposed device at cryogenic temperature can work properly and become a promising device for future quantum computing systems.

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Performance Analysis of GAA MOSFET for Lower Technology Nodes.

Cited by 11 publications

References 0 publications

Development of an analytical model of work function modulated GAA MOSFET for electrostatic performance analysis

Development of an analytical model of work function modulated GAA MOSFET for electrostatic performance analysis

Extensive Study of Position-Dependent Multi-Channel GAA MOSFET and its Effect on Device Performance

Performance Analysis of Gate All Around (GAA) MOSFET at Cryogenic Temperature for the Sub-Nanometer Regime

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