Performance enhancement of n-channel inversion type InxGa1−xAs metal-oxide-semiconductor field effect transistor using <i>ex situ</i> deposited thin amorphous silicon layer

Sonnet, A. M.; Hinkle, Christopher L.; Jivani, Mahesh N.; Chapman, R. A.; Pollack, G.; Wallace, Robert M.; Vogel, Eric M.

doi:10.1063/1.2991340

Cited by 61 publications

(22 citation statements)

References 21 publications

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“…MOS transistors using these analogous InGaAs interfaces reveal much higher drive current and transconductance from the devices in which all detectable Ga 3+ were removed. 20 The extracted mobility further confirms the device performance increase via the removal of Ga 2 O 3 ͑Ref. 21͒.…”

supporting

confidence: 55%

Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning

Hinkle

Milojević

Brennan

et al. 2009

Applied Physics Letters

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269

166

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The passivation of interface states remains an important problem for III-V based semiconductor devices. The role of the most stable bound native oxides GaO x ͑0.5Յ x Յ 1.5͒ is of particular interest. Using monochromatic x-ray photoelectron spectroscopy in conjunction with controlled GaAs͑100͒ and InGaAs͑100͒ surfaces, a stable suboxide ͑Ga 2 O͒ bond is detected at the interface but does not appear to be detrimental to device characteristics. In contrast, the removal of the Ga 3+ oxidation state ͑Ga 2 O 3 ͒ is shown to result in the reduction of frequency dispersion in capacitors and greatly improved performance in III-V based devices.

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supporting

confidence: 55%

Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning

Hinkle

Milojević

Brennan

et al. 2009

Applied Physics Letters

Self Cite

269

166

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“…23 While Jiang et al 24 have shown that thin amorphous silicon interlayers can be successfully converted into ytterbium silicide, high temperature annealing could detrimentally impact on the interface quality as III-V materials are unstable at high temperature. 25 The Mg silicate formation procedure at 500°C outlined in this work may make it more suitable for silicon interlayer modification on III-V semiconductor substrates than other metal silicates.…”

Section: Resultsmentioning

confidence: 99%

Photoemission study of the SiO2 conversion mechanism to magnesium silicate

Casey

Hughes

2010

Journal of Applied Physics

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The objective of this work is to investigate interface chemistries which minimize the interfacial silicon oxide transition region at Si/high-k dielectric interfaces. We report on the mechanism by which a silicon native oxide layer is converted into magnesium silicate. The deposition of metal Mg onto a SiO 2 native oxide surface resulted in the formation of a magnesium silicide in addition to substochiometric silicon oxides and a significant decrease in the oxidised silicon signal. Annealing to 300°C resulted in the decomposition of the magnesium silicide, oxidation of the Mg, and the desorption of excess metallic Mg. Subsequent annealing to 500°C resulted in converting the SiO 2 into magnesium silicate. The results suggest that the decomposition of the Mg silicide in the presence of the residual native oxide facilitates silicate formation at 500°C. Due to the reported thermal stability of Mg silicate it is suggested that this process may be beneficial in modifying the interface characteristics of the Si/high-k dielectric interface which has potentially significant implications for future semiconductor device generations.

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“…Although much work has been carried out on III-V surface channel MOS field effect transistors (MOSFETs) with high-k dielectrics, a high defect density between the III-V semiconductor and the high-k gate dielectric is still a major issue. 1,2 Moving the channel away from the high-k dielectric in buried channel MOSFET structures with barrier layers have shown promising results. [3][4][5][6] Indium phospide (InP) is a promising barrier layer material as an excellent interface with the InGaAs channel can be obtained from in-situ growth of an InP barrier layer.…”

mentioning

confidence: 98%

Effect of post deposition anneal on the characteristics of HfO2/InP metal-oxide-semiconductor capacitors

Galatage

Dong

Zhernokletov

et al. 2011

Applied Physics Letters

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Performance enhancement of n-channel inversion type InxGa1−xAs metal-oxide-semiconductor field effect transistor using ex situ deposited thin amorphous silicon layer

Cited by 61 publications

References 21 publications

Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning

Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning

Photoemission study of the SiO2 conversion mechanism to magnesium silicate

Effect of post deposition anneal on the characteristics of HfO2/InP metal-oxide-semiconductor capacitors

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