Performance evaluation of channel length downscaling of various high voltage AlGaN/GaN power HEMTs

Guo, Zhibo; Chow, T. Paul

doi:10.1002/pssa.201431657

Cited by 11 publications

(5 citation statements)

References 23 publications

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“…For all the devices, the internal channel current i ch is higher than the drain current i D during the turn-on period, and lower than i D during the turn-off period, confirming the validity of Eqs. (5) and (6). Comparing the two HEMT structures, the smaller gate voltage swing of p-AlGaN gate HEMT (À10 to 3 V) than that of MOS channel HEMT (À10 to 15 V) brings about its longer discharging time of C oss and hence longer In the turn-off waveforms of the MOS channel HEMT and the UMOSFET (Fig.…”

Section: Resultsmentioning

confidence: 98%

“…Other methods to obtain enhancement mode HEMTs have also been developed; a p–n junction gate in the p‐AlGaN gate HEMT depletes the 2DEG channel at zero gate bias . The MOS channel HEMT combines the advantages of the HEMT and the MOSFET by combining the low‐resistivity 2DEG drift region of a traditional HEMT with a low gate‐leakage, enhancement‐mode MOS channel . The vertical GaN UMOSFET is also under investigation with potentially higher channel density and better robustness than the lateral HEMT .…”

Section: Introductionmentioning

confidence: 99%

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Lossless turn-off switching projection of lateral and vertical GaN power field-effect transistors

Guo

Hitchcock

Chow

2017

Phys. Status Solidi A

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New physical insights into switching loss evaluation are applied to GaN power field‐effect transistors, including p‐AlGaN gate HEMTs, MOS channel HEMTs, and vertical UMOSFETs. Internal channel current is used to calculate true switching loss values for both turn‐on and ‐off. In contrast to conventional terminal current‐based loss calculations, energy stored in device output capacitances during turn‐off and dissipated during turn‐on is counted as turn‐on loss rather than turn‐off loss. At appropriate RG and off‐state VG values, lossless turn‐off can be achieved for MOS channel HEMTs and UMOSFETs, but not for p‐AlGaN gate HEMTs. In appropriate circuit applications, near zero total switching loss can be realized by combining lossless turn‐off and zero‐voltage turn‐on.

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Section: Resultsmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

Lossless turn-off switching projection of lateral and vertical GaN power field-effect transistors

Guo

Hitchcock

Chow

2017

Phys. Status Solidi A

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“…29) 2DEG channels have smaller resistance than MOS channels due to their higher mobility. 30) CAVETs show the smallest R on,sp , since they benefit from both the vertical topology and the 2DEG channel. In contrast, MOS channel HEMTs employ the lateral topology as well as the MOS channel, resulting in the highest R on,sp .…”

Section: Discussionmentioning

confidence: 99%

Comparative performance evaluation of lateral and vertical GaN high-voltage power field-effect transistors

Guo

Hitchcock

Chow

2019

Jpn. J. Appl. Phys.

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We have evaluated specific on-state resistance (Ron,sp) and switching performance of various GaN power field-effect transistors (FETs) with 600 and 1200 V ratings using analytical calculation and numerical simulation. The normally-off GaN power FET family includes lateral p-GaN gate high electron mobility transistors (HEMTs), lateral metal-oxide-semiconductor (MOS) channel HEMTs, current aperture vertical electron transistors (CAVETs) and vertical U-shaped trench-gate MOS field-effect transistors (UMOSFETs). This study shows the advantages of vertical GaN power FETs over lateral GaN power HEMTs. These advantages include lower Ron,sp and smaller switching energy loss, especially at higher blocking voltages (1200 V). At 600 V, lateral P-GaN gate HEMTs are competitive with vertical power FETs. Vertical GaN CAVETs perform better than both lateral HEMTs and vertical UMOSFETs at both voltage ratings, benefiting from its lowest Ron*QG figure-of-merit.

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“…For junction-side thermal management, approaches including the integration of high-k T heat spreading layers, flip-chip integration and microfluidic cooling could be utilized to dissipate heat from the active region. Junction-side thermal management is especially enticing for lateral (U)WBG transistor structures which typically have their active regions within tens of nanometers of the junction-side device surface, as is the case for structures such as GaN HEMTs, Al x Ga 1-x N HEMTs, and lateral Ga 2 O 3 MOSFETs [160][161][162][163].…”

Section: Device-package Co-designmentioning

confidence: 99%

Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective

Qin

Albano

Spencer

et al. 2023

J. Phys. D: Appl. Phys.

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Power semiconductor device is a fundamental driver for advancement in power electronics, the technology for electric energy conversion. Power devices based on wide-bandgap (WBG) and ultra-wide bandgap (UWBG) semiconductors allow for smaller chip size, lower loss and higher frequency as compared to the silicon (Si) counterpart, thus enabling a higher system efficiency and smaller form factor. Amongst the challenges for the development and deployment of WBG and UWBG devices is the efficient dissipation of heat, an unavoidable by-product of the higher power density. To mitigate the performance limitations and reliability issues caused by self-heating, thermal management is required at both device and package levels. Particularly, packaging is a crucial milestone for the development of any power device technology; WBG and UWBG devices have both reached this milestone recently. This paper provides a timely review on the thermal management of WBG and UWBG power devices with an emphasis on the packaged devices. Additionally, emerging UWBG devices hold good promise for high-temperature applications due to the low intrinsic carrier density and the increased dopant ionization at elevated temperatures. The fulfillment of this promise in system applications, in conjunction with overcoming the thermal limitations of some UWBG materials, require new thermal management and packaging technologies. To this end, we provide perspectives on the relevant challenges, potential solutions and research opportunities, highlighting the pressing needs for the device-package, electro-thermal co-design and the high-temperature packages that can withstand the high electric field expected in UWBG devices.

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Performance evaluation of channel length downscaling of various high voltage AlGaN/GaN power HEMTs

Cited by 11 publications

References 23 publications

Lossless turn-off switching projection of lateral and vertical GaN power field-effect transistors

Lossless turn-off switching projection of lateral and vertical GaN power field-effect transistors

Comparative performance evaluation of lateral and vertical GaN high-voltage power field-effect transistors

Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective

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