2014
DOI: 10.1063/1.4863640
|View full text |Cite
|
Sign up to set email alerts
|

Performance evaluation of GaN light-emitting diodes using transferred graphene as current spreading layer

Abstract: This study elucidates the correlation among conductivity of graphene and interface aspects in GaN light-emitting diodes (LEDs). Using a multilayer graphene of low sheet resistance, it is demonstrated that graphene alone can make ohmic contact with p-GaN without necessitating additional interlayer. Large-area blue LED with relatively low contact resistance in the order of 10−2 ohm-cm2 and improved forward voltage of 3.2 ± 0.1 V was realized irrespective of the use of the interlayer. The results from parallel ev… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1

Citation Types

0
23
0

Year Published

2015
2015
2024
2024

Publication Types

Select...
7
1

Relationship

0
8

Authors

Journals

citations
Cited by 24 publications
(25 citation statements)
references
References 33 publications
0
23
0
Order By: Relevance
“…For GaN-based LED device, the p-type GaN layers own relatively high resistivity resulting in the inhomogeneous distribution of current density [1]. Obviously, transparent current spreading layers (TCSLs) are crucial for the homogeneous hole injection into the active regions of the LEDs.…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…For GaN-based LED device, the p-type GaN layers own relatively high resistivity resulting in the inhomogeneous distribution of current density [1]. Obviously, transparent current spreading layers (TCSLs) are crucial for the homogeneous hole injection into the active regions of the LEDs.…”
Section: Introductionmentioning
confidence: 99%
“…Several pioneering works have reported the application of graphene film as TCSLs in GaN-based LEDs [1,2,[5][6][7]. However, it is still difficult to form good ohmic contact between graphene and p-GaN due to the mismatch of work function, which causes high operating voltage and great power loss.…”
Section: Introductionmentioning
confidence: 99%
“…GaN is one of the most promising wide bandgap semiconductors for applications in optoelectronic and other electronic devices such as light-emitting diodes, laser diodes, solar cells, and high-electron-mobility transistors [95][96][97][98][99]. The transparency of metal oxide conductors is poor in the UV and near UV region, which affects the photodetectors efficiency and brightness of LEDs.…”
Section: Graphene-gan Heterostructurementioning
confidence: 99%
“…9,10 Recently, graphene has been proposed and demonstrated as TCE on GaN-based LED. However, due to large work function (Φ) discrepancy with p-GaN 11 , high forward voltage 12 and poor current spreading 13 , the performance of the LED with graphene TCE is still not at par with ITO-based TCE. Hence, in order to improve the performance of the graphene-based TCE on GaN-based LED, many groups have suggested a more exquisite solid-phase layer-stacking, hybridizing graphene-based TCE with ITO rods 14 , thin ITO layer 15,16 , metal nanowires (i.e.…”
mentioning
confidence: 99%
“…20,30 Apart from that, unfavourable conductivity and charge scattering across grain boundaries of polycrystalline graphene film also affected the lateral current spreading performance of bare graphene TCE. 12 On the other hand, when CNT-graphene composite film was adopted as TCE, the Vf was reduced down to 6.12 V at 20 mA. This is largely due to improved interconnected network and reduced contact resistivity of network CNT-graphene composite film.…”
mentioning
confidence: 99%