Performance fluctuations of 0.10 μm MOSFETs-limitation of 0.1 μm ULSIs

Mizuno, Tomohisa; Iwase, M.; Niiyama, Hiromi; Shibata, Tadashi; Fujisaki, Koji; Nakasugi, Tetsuro; Toriumi, Akira; Ushiku, Y.

doi:10.1109/vlsit.1994.324401

Cited by 20 publications

(12 citation statements)

References 2 publications

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“…The predicted threshold voltage fluctuations were experimentally confirmed for a wide range of fabricated and measured MOSFETs [7], [39]- [41] down to sub 0.1 m dimensions [42]- [45]. Several analytical models with different degrees of complexity describing the random dopant induced threshold voltage fluctuations in MOSFETs have been developed over the years [38], [39], [41], [46], [47].…”

Section: A Random Discrete Dopantsmentioning

confidence: 89%

Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETs

Asenov

Brown

Davies

et al. 2003

IEEE Trans. Electron Devices

504

251

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Abstract-Intrinsic parameter fluctuations introduced by discreteness of charge and matter will play an increasingly important role when semiconductor devices are scaled to decananometer and nanometer dimensions in next-generation integrated circuits and systems. In this paper, we review the analytical and the numerical simulation techniques used to study and predict such intrinsic parameters fluctuations. We consider random discrete dopants, trapped charges, atomic-scale interface roughness, and line edge roughness as sources of intrinsic parameter fluctuations. The presented theoretical approach based on Green's functions is restricted to the case of random discrete charges. The numerical simulation approaches based on the drift diffusion approximation with density gradient quantum corrections covers all of the listed sources of fluctuations. The results show that the intrinsic fluctuations in conventional MOSFETs, and later in double gate architectures, will reach levels that will affect the yield and the functionality of the next generation analog and digital circuits unless appropriate changes to the design are made. The future challenges that have to be addressed in order to improve the accuracy and the predictive power of the intrinsic fluctuation simulations are also discussed.

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Section: A Random Discrete Dopantsmentioning

confidence: 89%

Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETs

Asenov

Brown

Davies

et al. 2003

IEEE Trans. Electron Devices

504

251

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“…The problem was pointed out in the early seventies [5], [6] and first treated analytically and numerically in [7]. The predicted threshold voltage fluctuations were experimentally confirmed for a wide range of fabricated and measured MOSFET's [8]- [10] down to sub-0.1 m dimensions [11]- [14]. Such fluctuations may seriously affect the functionality [15], performance, and yield of the corresponding systems.…”

Section: Introductionmentioning

confidence: 97%

Random dopant induced threshold voltage lowering and fluctuations in sub-0.1 μm MOSFET's: A 3-D "atomistic" simulation study

Asenov

1998

IEEE Trans. Electron Devices

595

315

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“…Especially, the correlation between circuit-performance fluctuations and technology fluctuations is still insufficient due to the conventional models for circuit simulation based on the drift approximation [5]. Furthermore, a separation between fluctuations within one IC-chip (intra-chip) and from chip to chip (inter chip) is seldom available [6]. For upgrading design reliability it is therefore essential to include the correlation between circuit-performance fluctuations and technology fluctuations in the design tools.…”

Section: Introductionmentioning

confidence: 99%

Correlation method of circuit-performance and technology fluctuations for improved design reliability

Miyawaki

Matsumoto

Mattausch

et al. 2001

Proceedings of the 2001 Conference on Asia South Pacific Design Automation - ASP-DAC '01

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Abstract-We propose a method of correlating circuit performance with technology fluctuations during the circuit-design phase. The method employs test circuits sensitive for technology fluctuations and a circuit simulation model which enables to interpret the correlation. We validate our proposal with a cascode-current-source test circuit and the driftdiffusion MOSFET model HiSIM. The chosen test circuit allows to separate intra-chip and inter-chip technology fluctuations and to correlate these fluctuations with circuit-performance fluctuations. One important result is that intra-chip fluctuations increase faster than inter-chip fluctuations with decreasing gate length. Quantitative modeling with HiSIM reveals random fluctuation of the effective gate length as the most likely origin for these findings.

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Performance fluctuations of 0.10 μm MOSFETs-limitation of 0.1 μm ULSIs

Cited by 20 publications

References 2 publications

Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETs

Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETs

Random dopant induced threshold voltage lowering and fluctuations in sub-0.1 μm MOSFET's: A 3-D "atomistic" simulation study

Correlation method of circuit-performance and technology fluctuations for improved design reliability

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