Performance improvement of flash memories with HfOxNy∕SiO2 stack tunnel dielectrics

Abstract

Articles you may be interested inPerformance improvement of metal-Al2O3-HfO2-oxide-silicon memory devices with band-engineered Hfaluminate/SiO2 tunnel barriers J. Vac. Sci. Technol. B 31, 041201 (2013); 10.1116/1.4807842 Improvement of memory performance by high temperature annealing of the Al 2 O 3 blocking layer in a chargetrap type flash memory device

Reactive magnetron sputtered hafnium oxide layers for nonvolatile semiconductor memory devices

“…2 Novel gate structures exploiting charge trapping layers based on high relative permittivity (high-k) materials are believed to overcome scaling issues. 3,4 Undoubtedly, hafnium oxide or oxynitride layers are the most commonly investigated high-k dielectrics that already have found applications in nowadays semiconductor devices, such as: a gate dielectric in metal-oxide-semiconductor field-effect transistors (MOSFETs) devices, 5 resistive random access memories, 6 for improvement of NVSM devices properties. 7,8 Moreover, they can also be used as a passivation layer in devices dedicated for special applications such as high temperature and high power electronics based on silicon carbide (SiC) 9,10 or InGaAs/InP heterostructure bipolar transistors.…”

Effect of Annealing on Optical, Mechanical, Electrical Properties and Structure of Scandium Oxide Films

“…The key technologies for current NVSMs, i.e., floating gate (FG) and silicon–oxide–nitride–oxide–silicon (SONOS), are already running into the fundamental barrier. Modern gate structures exploiting charge trapping layers based on high relative permittivity (high‐ k ) materials are believed to overcome scaling issues . The Sc 2 O 3 material, due to its cubic bixbyite structure and low crystal structure mismatch, can find applications as the gate dielectric material in gallium nitride‐based high electron mobility transistors (HEMTs) and metal–insulator–semiconductor (MIS) structures …”