Performance of FlexRay: a fully programmable illumination system for generation of freeform sources on high NA immersion systems

Mulder, Melchior; Engelen, André; Noordman, O.F.J.; Streutker, Gert; Drieenhuizen, Bert van; Nuenen, Cas van; Endendijk, Wilfred; Verbeeck, J.; Bouman, Wim; Bouma, Anita; Kazinczi, Robert; Socha, Robert; Jürgens, Dirk; Zimmermann, J.; Trauter, Bastian; Bekaert, Joost; Laenens, Bart; Corliss, Daniel; McIntyre, Greg

doi:10.1117/12.845984

Cited by 41 publications

(12 citation statements)

References 6 publications

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“…Although SMO computational methods had been developed prior to the 22-nm node, their implementation had been restricted by the time and cost of learning cycles associated with the use of a static diffractive-optical element inserted into the lithographic exposure tool for achieving a complex pixelated illumination source. However, new advancements in the industry enabled the capability of using a fully programmable microarray of mirrors to produce a freeform illumination source for use in the 22-nm technology manufacturing environment [7]. IBM has heavily leveraged this new capability to define critical-level lithography processes and corresponding design rules that enable the use of single patterning processes.…”

Section: Pattern Transfer Challenges and Innovationsmentioning

confidence: 99%

Performance-optimized gate-first 22-nm SOI technology with embedded DRAM

et al. 2015

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IBM's high-performance 22-nm silicon-on-insulator (SOI) technology is the enabling physical foundation of IBM POWER8i processors. This paper describes, for the first time in detail, some of the unique aspects of the silicon processing, the features that enabled the industry-leading chip-level performance, and some aspects of the collaborative approach between technology and design teams that enabled both first-time-right silicon and rapid yield improvement. Most critical to the processor functional capability and power-performance achievements are the high-density on-chip memory in the form of embedded DRAM and the high-performance FET device designs based on a low-parasitic-capacitance gate-first FET architecture. Extensive on-chip analog functions are enabled by an additional comprehensive set of devices available in the technology. Fifteen levels of metal with five metal levels at an 80-nm pitch provide the interconnect and power distribution. We describe the pattern resolution enhancement strategy as well as motivation and structural aspects of the innovative features, from the low-resistance N+ epitaxy substrate under the SOI to a dual-embedded source-drain architecture and a highly scaled gate dielectric.

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Section: Pattern Transfer Challenges and Innovationsmentioning

confidence: 99%

Performance-optimized gate-first 22-nm SOI technology with embedded DRAM

et al. 2015

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“…In the system, a calibration procedure is in place to make sure that the pupil always performs as required [15,16]. Should there be non-functional mirrors, measures are in place to make sure that these mirrors do not reflect light into the pupil plane so that optimal source quality is maintained.…”

Section: Distribution Of the Spots For An Arbitrary Settingmentioning

confidence: 99%

“…In the new programmable FlexRay illuminator [15,16], the DOE and the part of the Aerial XP illuminator containing zoom and axicon are replaced by a module in which the angular distribution is created by an array of micro mirrors ( figure 11). This array consists of thousands of tiny mirrors, each of which creates one spot in the pupil plane.…”

Section: Principle Of the Flexray Illumination Systemmentioning

confidence: 99%

Generation of arbitrary freeform source shapes using advanced illumination systems in high-NA immersion scanners

et al. 2010

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The application of customized and freeform illumination source shapes is a key enabler for continued shrink using 193 nm water based immersion lithography at the maximum possible NA of 1.35. In this paper we present the capabilities of the DOE based Aerial XP illuminator and the new programmable FlexRay illuminator. Both of these advanced illumination systems support the generation of such arbitrarily shaped illumination sources. We explain how the different parts of the optical column interact in forming the source shape with which the reticle is illuminated. Practical constraints of the systems do not limit the capabilities to utilize the benefit of freeform source shapes vs. classic pupil shapes. Despite a different pupil forming mechanism in the two illuminator types, the resulting pupils are compatible regarding lithographic imaging performance so that processes can be transferred between the two illuminator types. Measured freeform sources can be characterized by applying a parametric fit model, to extract information for optimum pupil setup, and by importing the measured source bitmap into an imaging simulator to directly evaluate its impact on CD and overlay. We compare measured freeform sources from both illuminator types and demonstrate the good matching between measured FlexRay and DOE based freeform source shapes.

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“…FlexRay is meant to improve the process windows on high-NA immersion systems by offering a fully programmable illumination system for generation of freeform sources [9] .…”

Section: System Extensionsmentioning

confidence: 99%

Towards ultimate optical lithography with NXT:1950i dual stage immersion platform

et al. 2010

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Optical lithography, currently being used for 45-nm semiconductor devices, is expected to be extended further towards the 32-nm and 22-nm node. A further increase of lens NA will not be possible but fortunately the shrink can be enabled with new resolution enhancement methods like source mask optimization (SMO) and double patterning techniques (DPT). These new applications lower the k1 dramatically and require very tight overlay control and CD control to be successful. In addition, overall cost per wafer needs to be lowered to make the production of semiconductor devices acceptable. For this ultimate era of optical lithography we have developed the next generation dual stage NXT:1950i immersion platform. This system delivers wafer throughput of 175 wafers per hour together with an overlay of 2.5nm. Several extensions are offered enabling 200 wafers per hour and improved imaging and on product overlay.The high productivity is achieved using a dual wafer stage with planar motor that enables a high acceleration and high scan speed. With the dual stage concept wafer metrology is performed in parallel with the wafer exposure. The free moving planar stage has reduced overhead during chuck exchange which also improves litho tool productivity.In general, overlay contributors are coming from the lithography system, the mask and the processing. Main contributors for the scanner system are thermal wafer and stage control, lens aberration control, stage positioning and alignment. The back-bone of the NXT:1950i enhanced overlay performance is the novel short beam fixed length encoder grid-plate positioning system. By eliminating the variable length interferometer system used in the previous generation scanners the sensitivity to thermal and flow disturbances are largely reduced. The alignment accuracy and the alignment sensitivity for process layers are improved with the SMASH alignment sensor. A high number of alignment marker pairs can be used without throughput loss, and furthermore the GridMapper functionality which is using the inter-die and intra-die scanner capability can reduce overlay errors coming from mask and process without productivity impact.In this paper we will present the main design features and discuss the system performance of the NXT:1950i system, focusing on the improvements made in overlay and productivity. We will show data on imaging, overlay, focus and productivity supporting the 3X-nm node and we will discuss next improvement steps towards the 2X-nm node.

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Performance of FlexRay: a fully programmable illumination system for generation of freeform sources on high NA immersion systems

Cited by 41 publications

References 6 publications

Performance-optimized gate-first 22-nm SOI technology with embedded DRAM

Performance-optimized gate-first 22-nm SOI technology with embedded DRAM

Generation of arbitrary freeform source shapes using advanced illumination systems in high-NA immersion scanners

Towards ultimate optical lithography with NXT:1950i dual stage immersion platform

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