Performance of GaN Power Devices for Cryogenic Applications Down to 4.2 K

Nela, Luca; Perera, Nirmana; Erine, Catherine; Matioli, Elison

doi:10.1109/tpel.2020.3047466

Cited by 61 publications

(25 citation statements)

References 21 publications

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“…8(a). As evident from that figure, GaN HEMTs do not show any carrier freeze-out effect at cryogenic temperatures [9]. This is because the channel carrier originates from piezoelectric effect and not from intentional doping which involves no ionization energy requirement.…”

Section: Resultsmentioning

confidence: 68%

Electrical characterization of a 1200V GaN HEMT at cryogenic temperatures

Hossain

Wei

Rashid

et al. 2022

IOP Conf. Ser.: Mater. Sci. Eng.

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The cryogenic operation of power converters integrated with the superconducting electric machines can leverage the lower parasitic, lower core material, and insulation requirement to reduce weight and increase power density in aerospace applications. To that end, Gallium Nitride High Electron Mobility Transistor (GaN HEMT) has recently proven to be the most viable option for the cryogenic converter operation. However, the topology selection and optimization are greatly influenced by the current/voltage rating of the power devices. Although series connected HEMTs can increase the blocking voltage, the dynamic voltage imbalance issue stemming from device parameter fluctuations, the larger number of required isolated gate driver makes the need for single high blocking voltage devices more compelling. This is even more pronounced in GaN due to its higher operating frequency which stems from the lower input capacitance. Although 900V cascode GaN HEMTs are now commercially available, single-chip high voltage HEMTs are attractive due to their zero reverse recovery charge, and lower package bonding parasitics. In this paper, a 1200V enhancement-mode GaN HEMT from GaNPower International has been characterized at cryogenic temperature. A 63% decrease has been demonstrated in the on-resistance, Rds(on) from room temperature to -150°C. The threshold voltage shows a 1.2x increase from room temperature to cryogenic temperature (-178°C). The transconductance (Gfs) shows a 1.34x increase for a temperature difference of 175°C. The results translate to a lower conduction loss and a faster switching speed and unfold further possibility of GaN in cryogenic converter applications.

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Section: Resultsmentioning

confidence: 68%

Electrical characterization of a 1200V GaN HEMT at cryogenic temperatures

Hossain

Wei

Rashid

et al. 2022

IOP Conf. Ser.: Mater. Sci. Eng.

View full text Add to dashboard Cite

show abstract

“…At switching frequencies of 140 kHz, a cryogenic 40-kW three-level NPC inverter showed 30 percent less losses than at room temperature [24]. Moreover, the operation of Gallium Nitride (GaN) power devices has been demonstrated over a temperature range from 400 K and down to 4.2 K, allowing high operational flexibility [25]. GaN devices have also been shown to have an overload current capability of four times the rated capacity when cryogenically cooled [26].…”

Section: Cold and Cryogenic Power Electronics (Cpe)mentioning

confidence: 99%

Next-Generation Cryo-Electric Hydrogen-Powered Aviation: A Disruptive Superconducting Propulsion System Cooled by Onboard Cryogenic Fuels

Nøland

Hartmann

Mellerud

2022

EEE Ind. Electron. Mag.

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The idea of hydrogen-powered airplanes has recently attracted a revitalized push in the aviation sector to combat CO2 emissions. However, to also reduce, or even eliminate, non-CO2 emissions and contrails, the combination of hydrogen with all-electric solutions is undoubtedly the best option. This article explores the next wave of disruptive technological developments needed to scale up zero-emission aviation beyond 2035. With respect to conventional electrical propulsion, major breakthroughs will be needed in terms of reducing the voltage level while increasing system-level power density and overall efficiency. We show how a next-generation hydrogen-powered aircraft could take advantage of its onboard cryogenic fuels to cool the electrical components, enabling a cryo-electric superconducting drivetrain that could lead to extraordinary performances.

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“…At switching frequencies of 140 kHz, a cryogenic 40-kW three-level NPC inverter showed 30 percent less losses than at room temperature [21]. Moreover, the operation of Gallium Nitride (GaN) power devices has been demonstrated over a temperature range from 400 K and down to 4.2 K, allowing high operational flexibility [22]. GaN devices have also been shown to have an overload current capability of four times the rated capacity when cryogenically cooled [23].…”

Section: Cold and Cryogenic Power Electronics (Cpe)mentioning

confidence: 99%

Next-Generation Cryo-Electric Hydrogen-Powered Aviation

Nøland¹,

Hartmann²,

Mellerud³

2021

Preprint

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Hydrogen-powered airplanes have recently attracted a revitalized push in the aviation sector to combat CO2 emissions. However, to also reduce, or even eliminate, non-CO2 emissions and contrails, the combination of hydrogen with all-electric solutions is undoubtedly the best option to move toward the ambitious goal of climate-neutral aviation. Another important design choice is to store hydrogen cryogenically in its liquid form (LH2) to reduce space occupation compared to storage as compressed gas. However, the LH2 fuels cannot be utilized directly in fuel cells. It needs to be brought from liquid to a gas at about 350 K, where large amounts of heat must be added. Thus, a synergy can be made from this otherwise wasted cryogenic refrigeration power where superconducting machines (SCMs) and cold power electronics (CPE) are low-hanging fruits that could lead to radical space and weight reductions onboard the aircraft. These opportunities can be realized without having to pay the price, nor the volume occupation and mass needed for the cooling ability usually needed to achieve these extraordinary performances. In fact, this ground-breaking synergy makes cryogenic energy conversion relevant in a whole new way for aviation. The SCMs’ more than five times higher power densities than their conventional counterparts are exceptionally significant. This article introduces the recently proposed cryo-electric drivetrain initiatives and explores the opportunities of using direct hydrogen cooling as a potential heating solution to enhance the overall performance and scalability of zero-emission propulsion systems in future regional aircraft.

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Performance of GaN Power Devices for Cryogenic Applications Down to 4.2 K

Cited by 61 publications

References 21 publications

Electrical characterization of a 1200V GaN HEMT at cryogenic temperatures

Electrical characterization of a 1200V GaN HEMT at cryogenic temperatures

Next-Generation Cryo-Electric Hydrogen-Powered Aviation: A Disruptive Superconducting Propulsion System Cooled by Onboard Cryogenic Fuels

Next-Generation Cryo-Electric Hydrogen-Powered Aviation

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