Performance of radiation hardening techniques under voltage and temperature variations

Veeravalli, Varadan Savulimedu; Steininger, Andreas

doi:10.1109/aero.2013.6497390

Cited by 7 publications

(3 citation statements)

References 20 publications

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“…For instance, with the channel width greater than 7.5 μm the SPS cell was completely immune to the square current pulse of 1.8 mA / 100 ps, implying that the SPS cell would be also immune to currents lower than 1.8 mA. This is in accordance with the wellknown fact that larger transistors provide better radiation hardness, because the increase of transistor dimensions results in the increase of the its capacitance and drive capability, enabling the transistor to dissipate faster the induced charge [43,46].…”

Section: Transistor Size Effectssupporting

confidence: 81%

“…The most important parameters for electrical characterization of SETs/SEUs are [1,13,19,30,39,43]: amplitude and duration of the SET current pulse, amplitude and duration of the resulting SET voltage pulse and critical charge. The shape, amplitude and duration of the SET-induced current/voltage pulse are dependent on the incident ion parameters (charge deposited), technological parameters (active volume within the transistor, electron-hole pair generation-rate, doping concentration and carrier mobility), design parameters (transistor size, load, supply voltage) and operating parameters such as temperature.…”

Section: Fundamental Mechanisms Of Seesmentioning

confidence: 99%

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Circuit-Level Simulation of the Single Event Transients in an On-Chip Single Event Latchup Protection Switch

et al. 2015

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The circuit-level simulation analysis of the single event transient response of an on-chip single event latchup protection switch (SPS cell), previously designed and developed in the IHP 250 nm CMOS process, is presented. The SPS cell provides the latchup protection for standard cells on the principle of power domain control. It is based on a sensing/ driving PMOS transistor which acts both as a latchup sensor and a driver for the standard cells, and includes additional PMOS and NMOS transistors for controlling the sensing/ driving transistor and interfacing to the external control logic. The previous work has confirmed the SPS cell's functionality in the case of single event latchup, and the experimental investigation has proven that the SPS cell is immune to single event latchup for LET values up to 74.8 MeV cm 2 /mg. This case study extends the previous research by introducing the circuit-level simulation of the SPS cell's response to the single event transients (SETs). Using the square pulse current as a SET model, the amplitude and duration of the SET-induced voltage pulses at the SPS cell's outputs have been analyzed with respect to the injected charge, operating temperature, supply voltage, load (number of standard cells connected to the SPS cell) and sensing/driving transistor's channel width. The results have shown that the immunity of the SPS cell to SETs can be significantly enhanced by connecting a larger number of standard cells to the SPS cell and increasing the sensing/driving transistor's size, without any area overhead.An analytical expression for calculating the critical charge in terms of the transistor size and the number of standard cells connected to the SPS cell has been derived. Moreover, the SPS cell can be used as a SET sensor for detecting the levels of injected charge which cannot be mitigated by the increase of transistor size and load, and in conjunction with the external control logic it could be possible to measure the SET duration and perform online corrections of the SET-induced faults in the standard cells supplied by the SPS cell.

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Section: Transistor Size Effectssupporting

confidence: 81%

Section: Fundamental Mechanisms Of Seesmentioning

confidence: 99%

Circuit-Level Simulation of the Single Event Transients in an On-Chip Single Event Latchup Protection Switch

et al. 2015

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“…Unlike high TID, SEEs do not lead to permanent damage, and may often be resolved by simply resetting the circuit [64]. A variety of radiation-hardening techniques exist at the system, circuit, and device levels, and are discussed in [66].…”

Section: Ionizing Radiation Effects On Cmos Electronicsmentioning

confidence: 99%

An Efficient RF Rectifier for Energy Harvesting Systems with Applications to Wireless Dosimetry

Toth¹

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In the medical industry, there exists a great need for donated blood, which must first be sterilized before being used in transfusions. A growing number of facilities have begun to use X-ray irradiation for blood sterilization, along with a tag employing a radiation-sensitive chemical to measure the applied dose. Such an approach is prone to measurement error and inaccuracy, leading to the wastage of blood, time, and expense. A wireless RFID sensor tag has been proposed by researchers at Carleton University. This work presents both a system-level overview of the X-ray dosimeter tag and a design of the energy harvesting module.The wireless X-ray dosimeter tag is estimated to consume 263.1 µW of power and is designed to operate at a distance of one metre away from a 2.45 GHz intentional RF power source. This source is harnessed by the energy harvesting module, which consists of a: dipole antenna, matching network, Dynamic V th Cancellation (DVC) rectifier, Smart Voltage Regulator (SVR), and off-chip ceramic capacitor.As part of the energy harvesting module, an RF rectifier employing DVC was designed and implemented in a commercial 0.13 µm CMOS process. Experimental measurements demonstrate that the design achieves a peak power conversion efficiency (PCE) of 49.7% at a power level of -12.0 dBm, an operational frequency of 2.45 GHz, and an output loading of 25 kΩ.ii This thesis is dedicated to my parents, for whose love and support has made this journey possible, and to the enduring memory of my grandparents.iii Acknowledgments I would first like to extend my foremost gratitude to my thesis supervisor, Professor Langis Roy, in recognition of his extraordinary commitment to my work. I am truly grateful for the countless hours of consultation he provided.In addition, I would like to express my sincere appreciation for several individuals

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An SET Tolerant Tree Arbiter Cell

Naqvi

Steininger

Lechner

2013

2013 IEEE 19th International Symposium on Asynchronous Circuits and Systems

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Performance of radiation hardening techniques under voltage and temperature variations

Cited by 7 publications

References 20 publications

Circuit-Level Simulation of the Single Event Transients in an On-Chip Single Event Latchup Protection Switch

Circuit-Level Simulation of the Single Event Transients in an On-Chip Single Event Latchup Protection Switch

An Efficient RF Rectifier for Energy Harvesting Systems with Applications to Wireless Dosimetry

An SET Tolerant Tree Arbiter Cell

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