Performance Prediction of Ultrascaled SiGe/Si Core/Shell Electron and Hole Nanowire MOSFETs

Paul, Abhijeet; Mehrotra, Saumitra Raj; Luisier, Mathieu; Klimeck, Gerhard

doi:10.1109/led.2010.2040577

Cited by 21 publications

(16 citation statements)

References 16 publications

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“…The qubit initialization and the requirement of long decoherence time have been the main challenges for the material and architecture selection for a quantum computer. 5 Silicon has been considered as one of the most promising materials to build qubits 2,6 due to the availability of a spinless isotope 28 Si and its small spin-orbit coupling, which ultimately should result in long spin decoherence time. In addition the hope is high to utilize the expertise of the entire Si-based semiconductor industry to ultimately deliver high levels of integration with well-developed technology.…”

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confidence: 99%

“…The lattice constant calculated using the virtual crystal approximation (VCA) is shown for comparison. The VCA can reproduce bulk properties like bandedges, 28 which makes it suitable for transport simulations where three-dimensional carrier behavior dominates. However, the deviation from the ideal lattice sites implies that at a SiGe/Si interface there are also positional disorders which will perturb the electron wavefunction interaction at that interface and therefore influence the VS.…”

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confidence: 99%

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Effects of interface disorder on valley splitting in SiGe/Si/SiGe quantum wells

Jiang

Kharche

Boykin

et al. 2012

Applied Physics Letters

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A sharp potential barrier at the Si/SiGe interface introduces valley splitting (VS), which lifts the 2-fold valley degeneracy in strained SiGe/Si/SiGe quantum wells (QWs). This work examines in detail the effects of Si/SiGe interface disorder on the VS in an atomistic tight binding approach based on statistical sampling. VS is analyzed as a function of electric field, QW thickness, and simulation domain size. Strong electric fields push the electron wavefunctions into the SiGe buffer and introduce significant VS variations from device to device. A Gedankenexperiment with ordered alloys sheds light on the importance of different bonding configurations on VS. We conclude that a single SiGe band offset and effective mass cannot comprehend the complex Si/SiGe interface interactions that dominate VS.

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confidence: 99%

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confidence: 99%

Effects of interface disorder on valley splitting in SiGe/Si/SiGe quantum wells

Jiang

Kharche

Boykin

et al. 2012

Applied Physics Letters

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“…It is important to note that in spite of poor interfacial quality between SiGe and gate dielectric [3], a good amount of improvement in the performance is observed in the SiGe devices. Tight-Binding (TB) [11], [12] NBTI study was performed on Si, SiGe and Si/SiGe pMOSFETs. It is now well known that NBTI is oxide field driven (Eox) and by stress bias (V G ) [8], [9], [10].…”

Section: Resultsmentioning

confidence: 99%

“…Eox determination was done using a 1D self-consistent Schrodinger-Poisson based C-V simulation. The effective hole mass (m * h ) and valence band splitting (ΔEv) for SiGe devices used for the C-V simulation are obtained from an atomistic 20 band sp 3 d 5 s * Tight-Binding based Virtual Crystal Approximation (TB-VCA) model [11], [12]. The m * h and ΔEv used for the CV simulations are reported in Table 1.…”

Section: Resultsmentioning

confidence: 99%

Intrinsic Reliability Improvement in Biaxially Strained SiGe p-MOSFETs

Deora¹,

Paul²,

Bijesh³

et al. 2011

IEEE Electron Device Lett.

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Abstract-In this letter we not only show improvement in the performance but also in the reliability of 30nm thick biaxially strained SiGe (20%Ge) channel on Si p-MOSFETs. Compared to Si channel, strained SiGe channel allows larger hole mobility (µ h ) in the transport direction and alleviates charge flow towards the gate oxide. µ h enhancement by 40% in SiGe and 100% in Si-cap SiGe is observed compared to the Si hole universal mobility. A ~40% reduction in NBTI degradation, gate leakage and flicker noise (1/f) is observed which is attributed to a 4% increase in the hole-oxide barrier height (φ) in SiGe. Similar field acceleration factor (Γ) for threshold voltage shift (ΔV T ) and increase in noise (ΔS VG ) in Si and SiGe suggests identical degradation mechanisms.Index Terms-Gate leakage, p-MOSFET, negative bias temperature instability (NBTI), SiGe, Tight-Binding.

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“…Various methods, including density-functional-theory (DFT)2829303132, tight-binding (TB) theory252633343536373839404142, and the theory244344454647484950515253, have been used to calculate the band structure of nanowires. Among them, DFT is the first-principle method which is free from any adjustable parameters, and is therefore often the choice for electronic structure calculations.…”

Section: Methodsmentioning

confidence: 99%

Band-inverted gaps in InAs/GaSb and GaSb/InAs core-shell nanowires

Luo

Huang

Liao

et al. 2016

Sci Rep

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The [111]-oriented InAs/GaSb and GaSb/InAs core-shell nanowires have been studied by the 8 × 8 Luttinger-Kohn Hamiltonian to search for non-vanishing fundamental gaps between inverted electron and hole bands. We focus on the variations of the band-inverted fundamental gap, the hybridization gap, and the effective gap with the core radius and shell thickness of the nanowires. The evolutions of all the energy gaps with the structural parameters are shown to be dominantly governed by the effect of quantum confinement. With a fixed core radius, a band-inverted fundamental gap exists only at intermediate shell thicknesses. The maximum band-inverted gap found is ~4.4 meV for GaSb/InAs and ~3.5 meV for InAs/GaSb core-shell nanowires, and for the GaSb/InAs core-shell nanowires the gap persists over a wider range of geometrical parameters. The intrinsic reason for these differences between the two types of nanowires is that in the shell the electron-like states of InAs is more delocalized than the hole-like state of GaSb, while in the core the hole-like state of GaSb is more delocalized than the electron-like state of InAs, and both favor a stronger electron-hole hybridization.

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Performance Prediction of Ultrascaled SiGe/Si Core/Shell Electron and Hole Nanowire MOSFETs

Cited by 21 publications

References 16 publications

Effects of interface disorder on valley splitting in SiGe/Si/SiGe quantum wells

Effects of interface disorder on valley splitting in SiGe/Si/SiGe quantum wells

Intrinsic Reliability Improvement in Biaxially Strained SiGe p-MOSFETs

Band-inverted gaps in InAs/GaSb and GaSb/InAs core-shell nanowires

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