Performances and Stability Analysis of a Novel 8T1R Non-Volatile SRAM (NVSRAM) versus Variability

Abstract

Static Random-Access Memories (SRAMs) are an integral part of the chip industry, occupying a noticeable share of the memory market due to their high performance and compatibility with CMOS technology. Traditional SRAMs do not have the capacity to retain data after power-off, preventing their use in non-volatile applications. This paper presents a novel Non-Volatile SRAM (NVSRAM) device based on Resistive RAM (RRAM) technology. A comparison between SRAM and the proposed NVSRAM performances is proposed at both cell and memory array level. The comparison covers several metrics such as energy consumption, area and static noise margin (SNM). Moreover, this work proposes a deep analysis of the impact of RRAM variability as well as the CMOS subsystem variability on the NVSRAM performances. The proposed structure demonstrates robust NVSRAM performances in terms of stability and reliability despite RRAM variability.

STATE: A Test Structure for Rapid Prediction of Resistive RAM Electrical Parameter Variability

“…Alternatively, the proposed characterization methodology can be used as a key enabler for RRAM models calibration. Model calibration can leverage on the parameters extracted from the proposed test chip instead of isolated cells characterized by an important variability [22]. Moreover, variability, including the switching variability, which is included in only a few compact models available in the literature [23][24], can be more accurately analyzed based on our test structure.…”