2006
DOI: 10.1016/j.susc.2006.05.054
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Perturbation of Ge(111) and Si(111)√3α-Sn surfaces by adsorption of dopants

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Cited by 4 publications
(2 citation statements)
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“…It also points out uniform distribution of Sn atoms in the alloy dots, considering that even a faint difference in adsorption site of Sn on Ge surface makes an apparent chemical shifts. [14][15][16] The aforementioned scanning TEM results 7) are also supported by these results.…”
supporting
confidence: 71%
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“…It also points out uniform distribution of Sn atoms in the alloy dots, considering that even a faint difference in adsorption site of Sn on Ge surface makes an apparent chemical shifts. [14][15][16] The aforementioned scanning TEM results 7) are also supported by these results.…”
supporting
confidence: 71%
“…Uniformity of observed stoichiometry (or rather suppression of the Sn ratio for the largest dot-size) therefore suggests no Sn segregation at surfaces of the nanodots. In addition, Sn 4d peak can be fitted as a single component of a reasonable peak-width (0.67 eV) by using reported spin-orbit splitting and blanching ratio, 14) as shown in the inset of Fig. 3.…”
mentioning
confidence: 99%