Nanodots of super-saturated Ge-Sn alloy formed on a Si substrate covered with a SiO 2 monolayer were investigated by photoemission spectroscopy. Core-level photoemission results indicated that the stoichiometry of the nanodots was uniform at an intended ratio without Sn segregation. Quantum size effect was also proved by valence-band photoemission on the present GeSn nanodots.