Phase separation and thermoelectric properties of the Pb0.25Sn0.25Ge0.5Te compound

Effective Electronic Mechanisms for Optimizing the Thermoelectric Properties of GeTe‐Rich Alloys

“…Such approaches included alloying methods (e.g., with SrTe, [ 1,2 ] MgTe, [ 3 ] and CdTe, [ 4 ] generating embedded strained endotaxial nanostructures, for the case of PbTe), the usage of layered structures, effectively scattered phonons (e.g., SnSe, [ 5 ] and approaching phase separation reactions, generating thermodynamic-driven nanoscale modulations (e.g., Ge x Pb 1-x Te [6][7][8] and Ge x (Sn y Pb 1-y ) 1-x Te. [ 9,10 ] All of these approaches resulted in a signifi cant increase of ZT up to ≈2.5 [ 5 ] due to an effective scattering of phonons by the associated generated nanofeatures.Regarding electronic optimization, for maximizing the α 2 / ρκ e component of ZT , besides using standard doping elements (e.g., PbI 2 and Bi as donors, and Na as an acceptor) for a moderate tuning of the carrier concentrations toward TE optimal values in the range of 10 19 cm −3 , attempts for TE electronic optimization of chalcogenides were so far focused on increasing the carrier effective mass by the convergence of electronic bands (e.g., enhancing the effect of heavy holes on account of light holes in degenerate PbSe [ 11 ] and GeTe [ 12 ] alloys). Distortion of the electronic density of states by the generation of resonant states and pinning of Fermi energy at TE optimal energetic locations (e.g., Tl- [ 13 ] and In-doped …”

Compatibility between Co-Metallized PbTe Thermoelectric Legs and an Ag–Cu–In Brazing Alloy

“…p -type Bi x Sb 2- x Te 3 [1,2,3,4,5,6] and n -type Bi 2 Te 3- x Se x [7,8,9,10,11] alloys are the most commonly investigated for operating temperatures of up to 300 °C, while for temperatures beyond 500 °C, filled skutterudites [12,13], half-Heusler [14], and silicide-based [15] compositions are the main focus. At the intermediate 300–500 °C temperature range, PbTe-based compositions are the most thermoelectrically efficient [16,17,18,19,20,21,22,23,24,25,26,27,28,29,30,31,32,33], where a very interesting, highly explored composition is the n -type 9.104 × 10 −3 mol % PbI 2 -doped PbTe [34,35,36,37,38]. …”

Structure and Thermoelectric Properties of Bi2−xSbxTe3 Nanowires Grown in Flexible Nanoporous Polycarbonate Templates

“…The TE dimensionless figure-of-merit of a material at a temperature T , defined as ZT = S 2 σT / κ (where S is the Seebeck coefficient, σ is the electrical conductivity κ is the thermal conductivity), is essentially dependent on the material’s intrinsic electrical and thermal properties. So far, considerable efforts have been made toward enhancing the figure-of-merit values in other existing TE material classes, including tellurides [3,4,5,6], half-Heuslers [7,8], and silicides [9,10]. Also ZT can be often largely improved by nanostructuring [11,12,13].…”