2013
DOI: 10.1039/c3nr02918b
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Phonon spectroscopy in a Bi2Te3 nanowire array

Abstract: The lattice dynamics in an array of 56 nm diameter Bi2Te3 nanowires embedded in a self-ordered amorphous alumina membrane were investigated microscopically using (125)Te nuclear inelastic scattering. The element specific density of phonon states is measured on nanowires in two perpendicular orientations and the speed of sound is extracted. Combined high energy synchrotron radiation diffraction and transmission electron microscopy was carried out on the same sample and the crystallinity was investigated. The na… Show more

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Cited by 17 publications
(21 citation statements)
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“…1(b)). The phonon density of states of the different Sn samples was probed by means of the nuclear resonant inelastic Xray scattering technique (also known as NIS: nuclear inelastic scattering) [37][38][39][40] . With this technique, finely monochromatized synchrotron X-rays (resolution better than 1 meV) are impinging on the sample.…”
Section: Methodsmentioning
confidence: 99%
“…1(b)). The phonon density of states of the different Sn samples was probed by means of the nuclear resonant inelastic Xray scattering technique (also known as NIS: nuclear inelastic scattering) [37][38][39][40] . With this technique, finely monochromatized synchrotron X-rays (resolution better than 1 meV) are impinging on the sample.…”
Section: Methodsmentioning
confidence: 99%
“…The different sites exhibit quite different phonon spectra, which leads to the observed change in the DPS for increasing iron content x, since the 6g becomes more prominent in the spectra. Additional NIS studies on the MnFe 4 Si 3 single crystal, relating the 4d and 6g modes to different crystallographic directions by utilizing the beam polarization [31,33], are provided in the supplemental material section.…”
mentioning
confidence: 99%
“…Thus, our experimental fi ndings demonstrate that simply scaling down a good thermoelectric material to improve the thermoelectric performance is not a straightforward approach in the case of topological insulators because of the increasing contribution from the surface states due to the increasing surface-to-volume ratio. [ 13,15,45,46,49 ] Furthermore, our approach opens new perspectives for experiments and applications based on topological insulators. [ 26 ] In fact, the topological surface states limit the power factor of (Bi 1− x Sb x ) 2 Te 3 NWs and thus achieving ZT enhancement [ 39 ] in such nanostructures becomes challenging.…”
Section: Doi: 101002/aenm201500280mentioning
confidence: 95%