Thermoelectric Properties of Band Structure Engineered Topological Insulator (Bi1−xSbx)2Te3 Nanowires

Hamdou, Bacel; Gooth, Johannes; Böhnert, Tim; Dorn, August; Akinsinde, Lewis; Pippel, Eckhard; Zierold, Robert; Nielsch, Kornelius

doi:10.1002/aenm.201500280

Cited by 25 publications

(18 citation statements)

References 58 publications

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“…The validity of the two-channel model has been confirmed in a recent work on a ternary (Bi 1-x Sb x ) 2 Te 3 NWs. 47 30 On the whole, the maximum Seebeck coefficient decreases with increasing s/v as a result of increasing influence of the TISS. The calculation results are shown in Figure 3 (a).…”

Section: 37mentioning

confidence: 98%

The surface-to-volume ratio: a key parameter in the thermoelectric transport of topological insulator Bi₂Se₃nanowires

et al. 2016

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We systematically investigated the role of topological surface states on thermoelectric transport by varying the surface-to-volume ratio (s/v) of Bi2Se3 nanowires. The thermoelectric coefficients of Bi2Se3 nanowires were significantly influenced by the topological surface states with increasing the s/v. The Seebeck coefficient of Bi2Se3 nanowires decreased with increasing the s/v, while the electrical conductivity increased with increasing the s/v. This implies that the influence of metallic surface states become dominant in thermoelectric transport in thin nanowires, and the s/v is a key parameter which determines the total thermoelectric properties. Our measurements were corroborated by using a two-channel Boltzmann transport model.

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Section: 37mentioning

confidence: 98%

The surface-to-volume ratio: a key parameter in the thermoelectric transport of topological insulator Bi₂Se₃nanowires

et al. 2016

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“…Over half a century of commercial applications, the figure of merit of thermoelectric materials has remained steady near ZT = 1 with a device efficiency of 10% at a temperature of Δ T = 300 K. To maximize the figure of merit, the material must have both high electrical conductance and low thermal conductivity, which validate the most conventional bulk semiconductor materials. Thus, nanostructured materials such as super lattices and multilayer thin films can be used for better electrical conductance and low thermal conducting.…”

Section: Thermoelectric Conversionmentioning

confidence: 99%

Applications of Phosphorene and Black Phosphorus in Energy Conversion and Storage Devices

Pang

Bachmatiuk

Yin

et al. 2017

Advanced Energy Materials

451

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Black phosphorus was first synthesized by Bridgman in 1914 [1] but has been less intensively studied in the past century due The successful isolation of phosphorene (atomic layer thick black phosphorus) in 2014 has currently aroused the interest of 2D material researchers. In this review, first, the fundamentals of phosphorus allotropes, phosphorene, and black phosphorus, are briefly introduced, along with their structures, properties, and synthesis methods. Second, the readers are presented with an overview of their energy applications. Particularly in electrochemical energy storage, the large interlayer spacing (0.53 nm) in phosphorene allows the intercalation/deintercalation of larger ions as compared to its graphene counterpart. Therefore, phosphorene may possess greater potential for high electrochemical performance. In addition, the status of lithium ion batteries as well as secondary sodium ion batteries is reviewed. Next, each application for energy generation, conversion, and storage is described in detail with milestones as well as the challenges. These emerging applications include supercapacitors, photovoltaic devices, water splitting, photocatalytic hydrogenation, oxygen evolution, and thermoelectric generators. Finally the fast-growing dynamic field of phosphorene research is summarized and perspectives on future possibilities are presented calling on the efforts of chemists, physicists, and material scientists

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“…Tetradymite pnictogen chalcogenides, i.e., groups V and VI compounds of the type V 2 VI 3 , exhibit a high ZT (= α 2 σΤ / κ ) at room temperature because their complex crystal structure with heavy elements enable a low thermal conductivity κ , while the low bandgap and degenerate electronic bands are conducive for a high power factor α 2 σ . Importantly, these compounds are topological insulators where the complex electronic structure arising from spin‐orbit induced band inversion, and topologically protected metallic surface states, provide opportunities to achieve high α and high σ . The ZT can be further improved by nanostructuring, which decreases κ via increased phonon scattering at grain boundaries.…”

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confidence: 99%

Harnessing Topological Band Effects in Bismuth Telluride Selenide for Large Enhancements in Thermoelectric Properties through Isovalent Doping

et al. 2016

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Dilute isovalent sulfur doping simultaneously increases electrical conductivity and Seebeck coefficient in Bi2 Te2 Se nanoplates, and bulk pellets made from them. This unusual trend at high electron concentrations is underpinned by multifold increases in electron effective mass attributable to sulfur-induced band topology effects, providing a new way for accessing a high thermoelectric figure-of-merit in topological-insulator-based nanomaterials through doping.

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Thermoelectric Properties of Band Structure Engineered Topological Insulator (Bi_1−xSb_x)₂Te₃ Nanowires

Cited by 25 publications

References 58 publications

The surface-to-volume ratio: a key parameter in the thermoelectric transport of topological insulator Bi₂Se₃nanowires

The surface-to-volume ratio: a key parameter in the thermoelectric transport of topological insulator Bi₂Se₃nanowires

Applications of Phosphorene and Black Phosphorus in Energy Conversion and Storage Devices

Harnessing Topological Band Effects in Bismuth Telluride Selenide for Large Enhancements in Thermoelectric Properties through Isovalent Doping

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Thermoelectric Properties of Band Structure Engineered Topological Insulator (Bi1−xSbx)2Te3 Nanowires

Cited by 25 publications

References 58 publications

The surface-to-volume ratio: a key parameter in the thermoelectric transport of topological insulator Bi2Se3nanowires

The surface-to-volume ratio: a key parameter in the thermoelectric transport of topological insulator Bi2Se3nanowires

Applications of Phosphorene and Black Phosphorus in Energy Conversion and Storage Devices

Harnessing Topological Band Effects in Bismuth Telluride Selenide for Large Enhancements in Thermoelectric Properties through Isovalent Doping

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Product

Resources

About

Thermoelectric Properties of Band Structure Engineered Topological Insulator (Bi_1−xSb_x)₂Te₃ Nanowires

The surface-to-volume ratio: a key parameter in the thermoelectric transport of topological insulator Bi₂Se₃nanowires

The surface-to-volume ratio: a key parameter in the thermoelectric transport of topological insulator Bi₂Se₃nanowires