2012
DOI: 10.1021/nl301204u
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Phonons in Slow Motion: Dispersion Relations in Ultrathin Si Membranes

Abstract: RECEIVED DATEWe report the changes in dispersion relations of hypersonic acoustic phonons in free-standing silicon membranes as thin as ~ 8 nm. We observe a reduction of the phase and group velocities of the fundamental flexural mode by more than one order of magnitude compared to bulk values. The modification of the dispersion relation in nanostructures has important consequences for noise control in nano and micro-electromechanical systems (MEMS/NEMS) as well as opto-mechanical devices.

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Cited by 90 publications
(91 citation statements)
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“…They are classified according to their displacement about the midplane of the membrane into antisymmetric (A) or flexural, symmetric (S) or dilatational Lamb waves and shear horizontal (SH) waves [58]. Therefore, phonon confinement in membranes is a means to tailor the dispersion relation and, thereby, engineering phonon propagation, with membrane dimension acting as the tuning parameter [59,60]. The introduction of controlled stress (σ) in the membrane offers an additional degree of freedom to tailor the phonon dispersion relations [61].…”
Section: Confinement Effects In Low-dimensional Structures: Discretismentioning
confidence: 99%
“…They are classified according to their displacement about the midplane of the membrane into antisymmetric (A) or flexural, symmetric (S) or dilatational Lamb waves and shear horizontal (SH) waves [58]. Therefore, phonon confinement in membranes is a means to tailor the dispersion relation and, thereby, engineering phonon propagation, with membrane dimension acting as the tuning parameter [59,60]. The introduction of controlled stress (σ) in the membrane offers an additional degree of freedom to tailor the phonon dispersion relations [61].…”
Section: Confinement Effects In Low-dimensional Structures: Discretismentioning
confidence: 99%
“…In the general case of anisotropic materials the phonon dispersion for relatively small wave numbers can be satisfactorily determined by numerical calculations based on the elastic continuum theory [9,41]. Assuming the longwavelength approximation, membranes without phononic structures are effectively homogenous, thus the wave vector q and the wave vector k of the acoustic phonon are equal.…”
Section: A Thin Si Membranementioning
confidence: 99%
“…Both periodic modulation of the elastic properties in phononic crystals (PnCs) [1][2][3][4][5][6] and reduction of the characteristic dimensions as in, e.g., thin membranes, thin films, and nanowires [7][8][9][10] lead to acoustic phonon propagation which is quite different than for bulk systems. The artificial, second-order periodicity introduced in PnCs results in the modification of the phonon dispersion and, optionally, in complete frequency band gaps due to Bragg reflections and/or local resonances, which can be controlled by geometry and material properties [1,3,11,12].…”
Section: Introductionmentioning
confidence: 99%
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“…Furthermore, thin free-standing SOI structures are ideal to investigate basic physics phenomena in low dimensional structures, such as thermal properties. [6][7][8][9] The most common way to fabricate supported single crystalline Si membranes is to release the top Si layer of a SOI wafer by etching from the backside through the handle wafer and the buried oxide (BOX) layer. However, to obtain very thin membranes, the process usually requires thermal oxidation to thin down the SOI film, followed by removal of the grown oxide.…”
mentioning
confidence: 99%