Phosphanstabilisierte Silber(I)–Carboxylate: Synthese und Verwendung in der Silber-CVD

Schmidt, Heike; Shen, Yingzhong; Leschke, M.; Haase, Th; Kohse‐Höinghaus, Katharina; Lang, Heinrich

doi:10.1016/s0022-328x(02)02166-6

Cited by 36 publications

(21 citation statements)

References 25 publications

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“…These intermediates are observed at reactor temperatures up to approximately 520 K, providing a range of operating conditions for a CVD process, first results of which are shown in the literature. [25,28] The thermal stability of the pentafluoropropionato compound 4 is slightly higher than that of 3, and should thus be preferred for deposition.…”

Section: Discussionmentioning

confidence: 99%

“…Thermogravimetric analysis (TGA) of 3 showed decomposition in a one-step process in the temperature range 420±620 K with a mass loss of 82.0 %, compared to the theoretical value of 82.8 %. [25] Thermal decomposition in the reactor was investigated for bubbler temperatures T B = 390±450 K and reactor temperatures T R = 390±590 K. Typical mass spectra are given in Figure 2a. For T B = 410 K, the observed signal belonging to the highest mass at 202 u is that of the phosphine ligand n-Bu 3 P. All other peaks are consistent with the fragmentation pattern of n-Bu 3 P, thus our findings are in agreement with those previously reported in the literature.…”

Section: Precursors Silver(i) Trifluoroacetatementioning

confidence: 99%

“…[25] Complex 4 differs from 3 in the nature of the group R. The perfluorinated ethyl ligand in 4 should lead to increased volatility. [24] Figure 4 shows the mass spectra measured under the same conditions as for 3 (Fig.…”

Section: Precursors Silver(i) Trifluoroacetatementioning

confidence: 99%

“…To reduce the effect of the long term drifts, all signals were normalized by that of Ar, which was used as a buffer gas. The temperature-dependent mass spectra upon evaporation ; analysis using Pyris software [25].…”

Section: ±10mentioning

confidence: 99%

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Gas Phase Study of Systems for the CVD of Silver

Haase

Kohse‐Höinghaus²,

Atakan

et al. 2003

Chemical Vapor Deposition

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Suitable strategies for the deposition of silver require knowledge of the interplay of gas phase and surface chemistry, hence the gas phase of several potential silver(I) precursor systems have been analyzed by molecular beam mass spectrometry. Specifically, the decomposition of silver(I) trifluoroacetate, silver(I) pentafluoropropionate, (trifluoroacetato)bis(tri-n-butylphosphine) silver(I), and (pentafluoropropionato)bis(tri-n-butylphosphine) silver(I) have been investigated under hot-wall CVD conditions. The experiments show that, under the conditions investigated, the silver carboxylates [AgO 2 CR] (R = CF 3 , C 2 F 5 ) are not suitable, while the phosphane-stabilized silver(I) carboxylates [(n-Bu 3 P) 2 AgO 2 CR] (R = CF 3 , C 2 F 5 ) are promising candidates. The thermal stability and potential formation mechanisms of the observed silver-containing fragments are discussed.

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Section: Discussionmentioning

confidence: 99%

Section: Precursors Silver(i) Trifluoroacetatementioning

confidence: 99%

Section: Precursors Silver(i) Trifluoroacetatementioning

confidence: 99%

Section: ±10mentioning

confidence: 99%

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Gas Phase Study of Systems for the CVD of Silver

Haase

Kohse‐Höinghaus²,

Atakan

et al. 2003

Chemical Vapor Deposition

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“…[7] The majority of the reported silver precursors are silver carboxylates or b-diketonates featuring tertiary phosphine (PMe 3 , PEt 3 , PPh 3 ) ligands. [10,11] However, these complexes have such low volatilities that the conventional evaporation process is useless. Special low-pressure deposition techniques, [12] or special precursor evaporation methods, such as powder flash evaporation, [13] powder feed methods, [14] or aerosol-assisted CVD, [15,16] have been developed.…”

Section: Introductionmentioning

confidence: 99%

CVD with Tri‐ⁿbutylphosphine Silver(I) Complexes: Mass Spectrometric Investigations and Depositions

Haase¹,

Kohse‐Höinghaus²,

Bahlawane³

et al. 2005

Chemical Vapor Deposition

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Tri-n butylphosphine silver(I) complexes were synthesized and characterized with respect to their suitability for the CVD of silver thin films. The volatility and thermal stability of these complexes were investigated using temperature-programmed and in-situ mass spectrometry (MS). Complexes with smaller carboxylate ligands showed superior long-term stability and had the advantage of evaporation without decomposition. Careful examination of the fragments detected during evaporation and in a CVD reactor allowed us to propose the gas-phase decomposition mechanisms of some potentially suitable silver precursors. Deposition experiments in a cold-wall CVD reactor using selected precursors resulted in smooth and conductive silver coatings.

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Metallic Materials Deposition: Metal‐Organic PrecursorsBased in part on the article Metallic Materials Deposition: Metal–Organic Precursors by Herbert D. Kaesz, Alfred Zinn, & Lutz Brandt which appeared in theEncyclopedia of Inorganic Chemistry, First Edition.

Winter

Zheng

El‐Kaderi

2005

Encyclopedia of Inorganic Chemistry

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This review describes metal‐organic precursors for the growth of metal‐containing thin films by chemical vapor deposition methods. The major emphasis is on precursors that have been reported since 1994, and corresponds to a time of major growth in this field. Progress in the development of metal‐organic precursors is documented for the main group, lanthanide, and group 4–11 elements. In the main group elements, there has been considerable research activity directed toward the identification of strontium and barium precursors, due both to the technological importance of mixed oxide phases and the inherent difficulties in obtaining volatile, complexes of these large metal ions. Aluminum, gallium, and indium have also been the subject of intense investigation, owing to the importance of many phases containing these elements. The group 4 and 5 elements titanium, zirconium, hafnium, niobium, and tantalum have been the subject of considerable precursor development activity, owing to the importance of several mixed oxide phases and the importance of zirconium and hafnium oxide for high permittivity gate materials in microelectronics devices. Growth of metal nitride films of these elements has also been an active area of research for use as barrier materials in microelectronics devices. The deposition of copper metal films from metal‐organic precursors is driven by the urgent need for copper metallization procedures in microelectronics device manufacturing. The current state of metal‐organic precursor development is presented for each of the other metallic elements.

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Phosphanstabilisierte Silber(I)–Carboxylate: Synthese und Verwendung in der Silber-CVD

Cited by 36 publications

References 25 publications

Gas Phase Study of Systems for the CVD of Silver

Gas Phase Study of Systems for the CVD of Silver

CVD with Tri‐ⁿbutylphosphine Silver(I) Complexes: Mass Spectrometric Investigations and Depositions

Metallic Materials Deposition: Metal‐Organic PrecursorsBased in part on the article Metallic Materials Deposition: Metal–Organic Precursors by Herbert D. Kaesz, Alfred Zinn, & Lutz Brandt which appeared in theEncyclopedia of Inorganic Chemistry, First Edition.

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Phosphanstabilisierte Silber(I)–Carboxylate: Synthese und Verwendung in der Silber-CVD

Cited by 36 publications

References 25 publications

Gas Phase Study of Systems for the CVD of Silver

Gas Phase Study of Systems for the CVD of Silver

CVD with Tri‐nbutylphosphine Silver(I) Complexes: Mass Spectrometric Investigations and Depositions

Metallic Materials Deposition: Metal‐Organic PrecursorsBased in part on the article Metallic Materials Deposition: Metal–Organic Precursors by Herbert D. Kaesz, Alfred Zinn, & Lutz Brandt which appeared in theEncyclopedia of Inorganic Chemistry, First Edition.

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CVD with Tri‐ⁿbutylphosphine Silver(I) Complexes: Mass Spectrometric Investigations and Depositions