Phosphorus-Doped Silicon Nanocrystals Exhibiting Mid-Infrared Localized Surface Plasmon Resonance

Rowe, David J.; Jeong, Jong Seok; Mkhoyan, K. Andre; Kortshagen, Uwe R.

doi:10.1021/nl4001184

Cited by 183 publications

(216 citation statements)

References 35 publications

(57 reference statements)

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“…The detailed description of synthesis can be found elsewhere [30,33]. The doping concentration is controlled by changing the flow rate of phosphine (PH 3 ) while maintaining constant flow rates for Ar and SiH 4 .…”

Section: Experimental Methodsmentioning

confidence: 99%

See 1 more Smart Citation

Metal–insulator transition in films of doped semiconductor nanocrystals

Chen¹,

Reich²,

Kramer³

et al. 2015

Nature Mater

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109

134

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To fully deploy the potential of semiconductor nanocrystal films as low-cost electronic materials, a better understanding of the amount of dopants required to make their conductivity metallic is needed. In bulk semiconductors, the critical concentration of electrons at the metal-insulator transition is described by the Mott criterion. Here, we theoretically derive the critical concentration nc for films of heavily doped nanocrystals devoid of ligands at their surface and in direct contact with each other. In the accompanying experiments, we investigate the conduction mechanism in films of phosphorus-doped, ligand-free silicon nanocrystals. At the largest electron concentration achieved in our samples, which is half the predicted nc, we find that the localization length of hopping electrons is close to three times the nanocrystals diameter, indicating that the film approaches the metal-insulator transition.Semiconductor nanocrystals (NCs) have shown great potential in optoelectronics applications such as solar cells [1], light emitting diodes [2], and field-effect transistors [3,4] by virtue of their size-tunable optical and electrical properties [5] and low-cost solution-based processing techniques [6,7]. These applications require conducting NC films and the introduction of extra carriers through doping can enhance the electrical conduction. Several strategies for NC doping have been developed. Remote doping, the use of suitable ligands as donors in the vicinity of NC surface, increased the conductivity of PbSe NC films by 12 orders of magnitude [8]. Electrochemical doping, which tunes the carrier concentration accurately and reversibly, resulted in conducting NC films [9,10]. Lately, stoichiometric control has emerged as a strategy to dope lead chalcogenide NCs [11]. Finally, electronic impurity doping of NCs, originally impeded by synthetic challenges [12], was recently achieved in InAs [13] and CdSe [14] NCs.While many experimental studies have been directed towards increasing the conductivity of NC films, there is still no clear consensus on the fundamental question: what is the condition for the metal-insulator transition (MIT) in NC films [15][16][17]? In a bulk semiconductor, the critical electron concentration n M for the MIT depends on the Bohr radius a B according to the well-known Mott criterion [18] n M a 3 B 0.02, where a B = ε 2 /m * e 2 is the effective Bohr radius (in Gaussian units), ε is the dielectric constant of the semiconductor, and m * is the effective electron mass. It is obvious that a dense film of undoped semiconductor NCs is an insulator, while a film of touching metallic NCs with the same geometry is a conductor. Therefore, the MIT has to occur in semiconductor NC films at some criti-FIG. 1. The origin of the metal-to-insulator transition in semiconductor nanocrystal films. The figure shows the cross section of two nanocrystals in contact through facets with radius ρ. The blue spherical cloud represents an electron wave packet which moves through the contact. Such a compact wave pac...

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Section: Experimental Methodsmentioning

confidence: 99%

“…The position of the plasmonic peak depends on the free electron concentration n as described by the equation [33] …”

Section: Electron Transport In Films Of Heavily Doped Silicon Nanocrymentioning

confidence: 99%

Metal–insulator transition in films of doped semiconductor nanocrystals

Chen¹,

Reich²,

Kramer³

et al. 2015

Nature Mater

Self Cite

109

134

View full text Add to dashboard Cite

show abstract

“…For example, it has been traditionally difficult to synthesize plasmonic Si NCs, due to issues in achieving substitutional doping. 133 Recently, however, Rowe et al were able, via a nonthermal plasma technique, to synthesize phosphorus doped Si NCs, with a LSPR between 0.007 and 0.3 eV. 133 The size of the NCs was between 4 and 10 nm.…”

Section: Transition Metal Dioxidesmentioning

confidence: 99%

New materials for tunable plasmonic colloidal nanocrystals

2014

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We present a review on the emerging materials for novel plasmonic colloidal nanocrystals. We start by explaining the basic processes involved in surface plasmon resonances in nanoparticles and then discuss the classes of nanocrystals that to date are particularly promising for tunable plasmonics: nonstoichiometric copper chalcogenides, extrinsically doped metal oxides, oxygen-deficient metal oxides and conductive metal oxides. We additionally introduce other emerging types of plasmonic nanocrystals and finally we give an outlook on nanocrystals of materials that could potentially display interesting plasmonic properties.

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“…Through controlling interactions of the charged clusters within the plasma, silicon nanocrystals with a broad range can be fabricated. This approach has been shown to be particularly attractive in performing doping experiments with silicon nanocrystals [94,130]. For instance, using nonthermal plasma synthesis, Kortshagen and coworkers have recently fabricated heavily doped boron and phosphorous doped silicon nanocrystals showing surface plasmons in the region of mid infrared [94,130].…”

Section: Preparation and The Impacts Of Surface Chemistrymentioning

confidence: 99%

“…This approach has been shown to be particularly attractive in performing doping experiments with silicon nanocrystals [94,130]. For instance, using nonthermal plasma synthesis, Kortshagen and coworkers have recently fabricated heavily doped boron and phosphorous doped silicon nanocrystals showing surface plasmons in the region of mid infrared [94,130]. This is particularly useful when the target applications are electronic and photonic devices, although it would be interesting to see whether the localized plasmon wavelength can be decreased to the near infrared region where bio-applications usually relies on.…”

Section: Preparation and The Impacts Of Surface Chemistrymentioning

confidence: 99%

Optical Biosensing and Bioimaging With Porous Silicon and Silicon Quantum Dots (Invited Review)

Guan¹

2017

PIER

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Phosphorus-Doped Silicon Nanocrystals Exhibiting Mid-Infrared Localized Surface Plasmon Resonance

Cited by 183 publications

References 35 publications

Metal–insulator transition in films of doped semiconductor nanocrystals

Metal–insulator transition in films of doped semiconductor nanocrystals

New materials for tunable plasmonic colloidal nanocrystals

Optical Biosensing and Bioimaging With Porous Silicon and Silicon Quantum Dots (Invited Review)

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