more, as will be discussed in the following, the optical properties of the metallic layer at longer wavelengths strongly attenuates the photo-conversion.A promising and widely investigated approach seems to be the exploitation of graphene. The coupling of this 2D semiconductor with Si has been proposed in recent works, such as in refs. [21][22][23][24][25], as a possible solution to develop photodetectors able to work in the long-wavelength range.In this paper, an infrared, lateral Schottky photo-diode based on a multilayer-graphene/intrinsic-silicon (MLG/i-Si) heterojunction is presented. The junction shows a strong gain of the responsivity in the long wavelength region as compared to a standard metal/Si junction. As recently reported by different groups, [26,27] a narrow band-gap (2D) semiconductor in intimate contact with a bulk silicon can induce a band-gap narrowing in the latter, leading to the shift of the band-edge absorption spectrum toward longer wavelengths. In the present work, the Si bandgap narrowing is induced by the MLG which acts as a 2D semiconductor. As a consequence, the overall absorption at longer wavelengths is strongly enhanced and this feature makes the device suitable for sensing applications in infrared light.