Photo-induced tunnel currents in Al-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Al</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">O</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>-Au structures

Burshtein, Z.; Levinson, J.

doi:10.1103/physrevb.12.3453

Cited by 42 publications

(19 citation statements)

References 15 publications

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“…Understanding the physics of EBIC imaging in resistive switching devices has broader implications for the metrology of resistive switching. The direct observation of hot electron currents, for example, opens the door to other hot electron techniques such as ballistic electron emission microscopy (BEEM) and internal photoemission (IPE) [58][59][60] .…”

Section: Discussionmentioning

confidence: 99%

“…IPE, being the optical analog to EBIC, sacrifices spatial resolution for precise spectroscopic information. While IPE has long been used to study MIM diodes and other electronic devices 59,61 , its use has not been demonstrated on filaments, probably due to the small active area. An IPE system, most likely combined with high brightness sources, focusing optics and phase sensitive detection, could make it possible to deconstruct the underlying electronic structure of the filament-electrode interface as a function of state.…”

Section: Discussionmentioning

confidence: 99%

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Stateful characterization of resistive switching TiO2 with electron beam induced currents

et al. 2017

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Metal oxide resistive switches are increasingly important as possible artificial synapses in next-generation neuromorphic networks. Nevertheless, there is still no codified set of tools for studying properties of the devices. To this end, we demonstrate electron beam-induced current measurements as a powerful method to monitor the development of local resistive switching in TiO2-based devices. By comparing beam energy-dependent electron beam-induced currents with Monte Carlo simulations of the energy absorption in different device layers, it is possible to deconstruct the origins of filament image formation and relate this to both morphological changes and the state of the switch. By clarifying the contrast mechanisms in electron beam-induced current microscopy, it is possible to gain new insights into the scaling of the resistive switching phenomenon and observe the formation of a current leakage region around the switching filament. Additionally, analysis of symmetric device structures reveals propagating polarization domains.

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Section: Discussionmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

Stateful characterization of resistive switching TiO2 with electron beam induced currents

et al. 2017

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“…The molecule-lead coupling is distributed among the replicas where the coupling matrix element is proportional to the l th Fourier component of the (transformed) periodic field. Formally, one obtains where is a generalized Fermi function, 23 corresponding to the nonequilibrium state of the driven lead. The displaced functions, f l ( K ) ( E ) = f ( K ) ( E – ℏωl ) are expressed in terms of the nondriven lead Fermi function, , where μ K is the lead chemical potential and T is the temperature.…”

mentioning

confidence: 99%

Mechanical Stabilization of Nanoscale Conductors by Plasmon Oscillations

2020

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External driving of the Fermion reservoirs interacting with a nanoscale charge-conductor is shown to enhance its mechanical stability during resonant tunneling. This counterintuitive cooling effect is predicted despite the net energy flow into the device. Field-induced plasmon oscillations stir the energy distribution of charge carriers near the reservoir’s chemical potentials into a nonequilibrium state with favored transport of low-energy electrons. Consequently, excess heating of mechanical degrees of freedom in the conductor is suppressed. We demonstrate and analyze this effect for a generic model of mechanical instability in nanoelectronic devices, covering a broad range of parameters. Plasmon-induced stabilization is suggested as a feasible strategy to confront a major problem of current-induced heating and breakdown of nanoscale systems operating far from equilibrium.

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“…These expressions are described extensively in refs. [13][14][15][16][17][18].As stated before the lanthanide ions form double layers perpendicular to the c-axis. The distance between these layers (-10 A) is considerably larger than the distance between two lanthanide ions in the layers (- 3.7 A).…”

Section: Discussionmentioning

confidence: 98%

Luminescence and energy migration in a two-dimensional system: NaEuTiO4

Berdowski

Blasse

1984

Journal of Luminescence

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Energy transfer processes in compounds NaGd1~Eu~TiO4(0 cx~1) have been evaluated. It is shown that in these compounds energy migration to quenching centres occurs down to the lowest temperatures if x > 0.3. Transfer from intrinsic Eu 3~ions to extrinsic Eu3 + ions has been observed. The nature of quenching centres and trap centres has been clarified. The characteristics of the energy migration processes can be explained using a two-dimensional diffusion model. The temperature dependence of the hopping rate can be explained assuming phonon-assisted energy transfer.

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Photo-induced tunnel currents in Al-Al2O3-Au structures

Cited by 42 publications

References 15 publications

Stateful characterization of resistive switching TiO2 with electron beam induced currents

Stateful characterization of resistive switching TiO2 with electron beam induced currents

Mechanical Stabilization of Nanoscale Conductors by Plasmon Oscillations

Luminescence and energy migration in a two-dimensional system: NaEuTiO4

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