CdSe thin film transistor (TFT) structures which have been ion implanted with 50 keV 52Cr, 50 keV 27Al, or 15 keV 11B have a very steeply rising conductivity above some threshold dose and exhibit modulated transistor characteristics over certain ranges of implant dose, even though there is no thermal annealing during or after ion implantation. These results are interpreted using a model based on grain boundary trapping theory. The dependence of leakage current on implant dose, and of drain current (at a fixed dose) on gate voltage are described very well by this model, when the drain voltage is very small. Using this simple model, the important parameters of the polycrystalline CdSe film, namely the trap density per unit area in the grain boundary, the donor density, grain size, and electron mobility can be deduced. The effect of thermal annealing on implanted and unimplanted CdSe TFT’s has also been studied and the model appears to give a general description of the conductivity behavior in polycrystalline semiconductor TFT’s. This is illustrated by applying the model to devices fabricated by other groups from polycrystalline CdSe, poly-Si and laser-annealed poly-Si semiconductor layers.

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A study of photo-induced tunnel currents in Al-A1~03-Au diode structures is presented. It includes measurements of both spectral dependence and voltage dependence. The experimental results obtained can be accounted for by an analysis based on the trapezoidal model for the oxide barrier shape. The data suggest that hot-electron attenuation in the A1203 layer is insignificant.

and 4 pm thick) fully depleted transmission type SBDs and a very small angular dependence of the SEU and SEL in the examined SRAMs. The HM65162 SRAMs were selected for this research since they had been extensively studied for their susceptibility to SEU caused by heavy ions [8-101 and protons [ 111. We have recently reported on a study of SEL in HM65162 using both heavy ions and protons [12].The present results have been analysed using our recently developed practical model [ 13,141. In the following paragraphs we describe the experimental results and discuss them.Careful measurements of the angular dependence of proton induced SEU and SEL in HM65162 SRAMs and of energy deposited by protons in thin surface barrier detectors are reported. We found a very weak anisotropy whose behavior is described by our model.

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