Photo-ionization cross-section of donor-related in (In,Ga)N/GaN core/shell under hydrostatic pressure and electric field effects

Ghazi, Haddou El; Peter, A. John

doi:10.1016/j.spmi.2017.02.013

Cited by 20 publications

(9 citation statements)

References 34 publications

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“…In the same sense, a detailed calculation of the Stark shift and PICS of on-center and off-center donor impurity in a core/shell ellipsoidal quantum dot is reported by Shi et al [9]. Besides, we have reported in our previous work the impacts of hydrostatic pressure and electric field on the PICS in (In,Ga)N/GaN spherical core/shell [26].…”

Section: Introductionsupporting

confidence: 64%

A theoretical study of the effects of electric field, hydrostatic pressure, and temperature on photoionization cross-section of a donor impurity in (Al, Ga)N/AlN double triangular quantum wells

et al. 2023

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The aim of this research is to analyze the influence of various factors on the photo-ionization cross-section in (Al,Ga)N/AlN double triangular quantum wells. Using the finite difference method, the effects of the electric field, hydrostatic pressure, temperature, and Ga concentration were investigated within the effective mass and parabolic approximations. Our findings show that the photo-ionization cross-section (PICS) is highly dependent on all the variables under consideration. The optical spectra were blue-shifted with increasing electric field and pressure and red-shifted with increasing temperature and impurity displacement far from the center of the structure. Furthermore, it was found that changes in gallium content and impurity position can increase the PICS amplitude. A comparison of the obtained results with the existing literature as a limiting case of the reported problem is also provided, and excellent agreement is found.

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Section: Introductionsupporting

confidence: 64%

A theoretical study of the effects of electric field, hydrostatic pressure, and temperature on photoionization cross-section of a donor impurity in (Al, Ga)N/AlN double triangular quantum wells

et al. 2023

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“…For ν 1−ν , the band-gap energy is obtained as the interpolation between and corrected by the bowing parameter [34]: The electron effective-mass in GaN (InN) is * = 0.19 0 ( * = 0.1 0 ) 0 is the free electron mass. The mean dielectric constant is * = 9.8 0 ( * = 13.7 0 ) for GaN (InN) where ε 0 is the static electrical permittivity of the vacuum.…”

Section: Theoretical Frameworkmentioning

confidence: 99%

Impact of QW coupling on the binding energy in InGaN/GaN under the effects of the size, the impurity and the internal composition

et al. 2020

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In the present paper, the binding energy of hydrogenic shallow-donor impurity in simple and double coupled quantum wells based on unstrained wurtzite (In,Ga)N/GaN is investigated. Considering the effective-mass and dielectric mismatches between the well and its surrounding matrix, the numerical calculations are performed within the framework of the parabolic band and the single band effective-mass approximations under the finite potential barrier using finite element method (FEM). According to our results, it appears that the main effect of the wells coupling is to enhance the binding energy. It is also obtained that the binding energy is strongly sensitive to the internal and external parameters and can be adjusted by the quantum well/barrier width, the impurity position and the internal Indium composition. Our results are in good agreement with the finding especially for those obtained by the variational approach.

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“…Influences of intense laser field and hydrostatic on PCS in pyramid-shaped quantum dots have also been reported [19]. There also have been studies of PCS in spherical core/shell zinc blende quantum structures under hydrostatic pressure and electric field [20].…”

Section: Introductionmentioning

confidence: 88%

“…Now, one of the physical quantities that are useful in the description of this binding energy-like problem is called photoionization cross section. This quantity may be regarded as the probability that a bound electron can be liberated by some appropriate radiation per unit time per unit area, given by [15][16][17][18][19][20]…”

Section: Theorymentioning

confidence: 99%

Photoionization Cross Section in Low-Dimensional Systems

Tshipa¹,

Masale²

2018

Heterojunctions and Nanostructures

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A theoretical investigation of the effects of the parabolic, shifted parabolic, hill-like, and cup-like parabolic confining electric potentials on photoionization cross section (PCS) in a spherical quantum dot is presented. Each of the parabolic potentials is superimposed on an infinite spherical square quantum well (ISSQW) potential. The parabolic potential blueshifts the peaks of the PCS, while the shifted parabolic potential causes a redshift. As the so-called strength of cup-like parabolic potential is increased, the peak of the PCS becomes redshifted for the s ! p transition, but blueshifted for the p ! d, d ! f (and so forth) transitions. On the contrary, an increase in the strength of the hill-like parabolic potential blueshifts peaks of the PCS for s ! p transitions, while it redshifts those of transitions between higher states.

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Photo-ionization cross-section of donor-related in (In,Ga)N/GaN core/shell under hydrostatic pressure and electric field effects

Cited by 20 publications

References 34 publications

A theoretical study of the effects of electric field, hydrostatic pressure, and temperature on photoionization cross-section of a donor impurity in (Al, Ga)N/AlN double triangular quantum wells

A theoretical study of the effects of electric field, hydrostatic pressure, and temperature on photoionization cross-section of a donor impurity in (Al, Ga)N/AlN double triangular quantum wells

Impact of QW coupling on the binding energy in InGaN/GaN under the effects of the size, the impurity and the internal composition

Photoionization Cross Section in Low-Dimensional Systems

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