Photo-reactive charge trapping memory based on lanthanide complex

Abstract

Traditional utilization of photo-induced excitons is popularly but restricted in the fields of photovoltaic devices as well as photodetectors, and efforts on broadening its function have always been attempted. However, rare reports are available on organic field effect transistor (OFET) memory employing photo-induced charges. Here, we demonstrate an OFET memory containing a novel organic lanthanide complex Eu(tta)3ppta (Eu(tta)3 = Europium(III) thenoyltrifluoroacetonate, ppta = 2-phenyl-4,6-bis(pyrazol-1-yl)-1,3,5-triazine), in which the photo-induced charges can be successfully trapped and detrapped. The luminescent complex emits intense red emission upon ultraviolet (UV) light excitation and serves as a trapping element of holes injected from the pentacene semiconductor layer. Memory window can be significantly enlarged by light-assisted programming and erasing procedures, during which the photo-induced excitons in the semiconductor layer are separated by voltage bias. The enhancement of memory window is attributed to the increasing number of photo-induced excitons by the UV light. The charges are stored in this luminescent complex for at least 104 s after withdrawing voltage bias. The present study on photo-assisted novel memory may motivate the research on a new type of light tunable charge trapping photo-reactive memory devices.

Light-responsive spiropyran based polymer thin films for use in organic field-effect transistor memories

“…[11][12][13][14][15] Significant efforts have been applied toward utilizing spiropyran as a light-responsive element in photoswitchable OFETs; [16][17][18][19][20] however, employing spirotype polymer compounds in organic flash memory devices is not yet reported. [24][25][26][27][28] This optical memory device could be operated by the mechanism that the photocarriers generated in the OSC were separated into high-energy electrons/holes and trapped in polymer electrets over the energy barrier through hot-carrier injection or tunneling process by applying the external electric fields. [21][22][23] The integration of both memory and photosensor capabilities into a single optical memory device (operated by optical programming and electrical erasing) has advanced the design of non-volatile imaging circuits.…”

Nondestructive Method for Mapping Metal Contact Diffusion in In2O3 Thin-Film Transistors

“…22 For this double-spin device, L ∼ 40 μm and W ∼ 200 μm. From the transfer characteristic of the double-spin device shown in Figure 3(b) one could estimate a threshold voltage value of 0.0 V, while the single-spin device threshold voltage could be estimated at 2.5 V 29,30 (see Figure 2(b)).…”

MemSor: Emergence of the In‐Memory Sensing Technology for the Digital Transformation

“…In addition to using emerging memory device architectures, organic-based optical memory devices with a promising performance have also been reported. [25,[30][31][32][33][34][35][36][37][38][39][40][41] However, the use of emerging architectures and inorganic materials compared to the devices based on traditional devices (i.e., field effect transistors, Flash memory) and semiconductor materials would further delay the potential technology transfer of such promising devices.…”