Photo‐Stable Organic Thin‐Film Transistor Utilizing a New Indolocarbazole Derivative for Image Pixel and Logic Applications

Park, Ji Hoon; Lee, Hee Sung; Park, Soo Hyung; Min, Sung Kil; Yi, Yeonjin; Cho, Cheon Gyu; Han, Jiwon; Kim, Tae‐Woong; Im, Seongil

doi:10.1002/adfm.201301783

Cited by 39 publications

(37 citation statements)

References 28 publications

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“…Compared to ICZP1, ICZP2 shows lesser thermal stability that may be due to the lack of substitution in the fluorene ring. These results are compatible with the earlier reports of ICZ derivatives having high thermal stability …”

Section: Resultssupporting

confidence: 93%

Indolo[3,2‐b]carbazole‐based poly(arylene ethynylene)s through Sonogashira coupling for optoelectronic and sensing applications

Vintu

Unnikrishnan

Shiju

et al. 2018

J of Applied Polymer Sci

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Two indolo[3,2-b]carbazole (ICZ)-based polymers have been designed and synthesized using Sonogashira cross-coupling based on dibromoindolo[3,2-b]carbazoles and 2,7-diethynylfluorene or 9,10-diethynylanthracene. The 2, 8 positions of the ICZ moiety has been used for the bridging of arylene ethynylene structure to form the polymer backbone. The characterization has been done by Fourier transform infrared, proton nuclear magnetic resonance, ultraviolet-visible and (UV-vis) fluorescence spectroscopic methods. The polymers, moderately soluble in aprotic and chlorinated solvents, have been found to possess thermal stability above 300 C. The band gap examinations, executed through cyclic voltammetry and complemented by UV-vis studies, indicated their semiconducting nature and the possibility for their utilization for the fabrication of polymer solar cells and for optical switching applications. Interestingly, the new diethynylindolocarbazole systems have been found to act as Bronsted acid sensors as well as a Hg 2+ receptors.

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Section: Resultssupporting

confidence: 93%

Indolo[3,2‐b]carbazole‐based poly(arylene ethynylene)s through Sonogashira coupling for optoelectronic and sensing applications

Vintu

Unnikrishnan

Shiju

et al. 2018

J of Applied Polymer Sci

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“…The energy of the blue illumination was slightly higher than the band gap (~2.95 eV) of the crystalline heptazole film (a single heptazole molecule is shown in the inset). 30 (We also conducted spectral responsivity measurements with the same diode in a UV/visible range as illustrated in Supplementary Figures S2a-d, where the unique light selectivity for photo detection is confirmed at 2.95 eV or 410 nm with a responsivity of 15-35 mA W − 1 ). According to Figure 1d, an open circuit voltage (V OC ) of~0.3 V was achieved along with a good photo-induced current of 100 nA (at a reverse bias voltage of − 2 V) under the blue light, while after illumination (turn off), the current-voltage (I-V) curve went back to its dark state behavior.…”

Section: Resultsmentioning

confidence: 99%

“…The speed difference was believed to result from the different exciton-binding energies of the crystalline heptazole and pentacene films (40 vs 120 meV, respectively). 29,30,34 As the recombination of the holes and electrons takes place within the electrode between the two organic diodes, efficient separation of the photo-excited charges or dissociation of the excitons in the semiconductor layer is required. Although the heptazole device must present advantages over other devices with a larger exciton-binding energy in terms of switching speed, PV-induced switching was in any case proven to be a working process.…”

Section: Resultsmentioning

confidence: 99%

Deep blue energy harvest photovoltaic switching by heptazole-based organic Schottky diode circuits

et al. 2016

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We report novel photovoltaic (PV) switching based on the low exciton-binding energy property of an organic heptazole (C 26 H 16 N 2 ) thin film after fabrication of an heptazole-based Schottky diode. The Schottky diode cell displayed an instantaneous voltage of 0.3 V as an open circuit voltage (V OC ) owing to the work function difference between the Schottky and ohmic electrode under deep blue illumination. Four tandem diode cells therefore produced~1.2 V. As a PV diode circuit can be formed using an even number of diodes, a photo-excited charge accumulation takes place, generating V OC in the central electrode of the tandem diode array by illuminating one half of the array. An electron-hole recombination then also takes place in that electrode by illuminating the other half, making the V OC decrease to 0 V. Utilizing this charge accumulation and recombination under deep blue illumination, we successfully demonstrated quite fast PV optical switching, logic gating and, ultimately, the gate switching of an organic field-effect transistor. We therefore concluded that our self-powered PV-induced switching was novel and promising enough to open a new door for energy harvest-related device applications in organics.

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“…Second, gate bias induced hysteresis of 2D TMD transistor is, in fact, quite a critical issue for realizing prototype sensor applications because consistent dynamic property of real circuits should be secured both in ON and OFF states . Several reports disclose that the electrical stability of the devices is significantly improved by the interface and surface states of the FET devices . For a good candidate to minimize the interfacial defect states in FET, the hexagonal boron nitride (h‐BN), dangling‐bond free dielectric layer, has been proposed .…”

Section: Introductionmentioning

confidence: 99%

2D MoSe₂ Transistor with Polymer‐Brush/Channel Interface

Jeong

Park

Ahn

et al. 2018

Adv Materials Inter

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depletion mode in general, that is to say, threshold voltage (V th ) is located quite away from 0 V whether the channel is nor p-type. [1,11,13,18,[22][23][24] This means that practical switching is not easy without applying high voltages; distinct OFF state is sometimes desperate in any smart functional/electrical applications involving either driving or sensing. [13,22,25,26] Second, gate bias induced hysteresis of 2D TMD transistor is, in fact, quite a critical issue for realizing prototype sensor applications because consistent dynamic property of real circuits should be secured both in ON and OFF states. [27][28][29][30] Several reports disclose that the electrical stability of the devices is significantly improved by the interface and surface states of the FET devices. [28,29,[31][32][33][34][35][36] For a good candidate to minimize the interfacial defect states in FET, the hexagonal boron nitride (h-BN), dangling-bond free dielectric layer, has been proposed. [37] Although this approach has been encouraging, h-BN is still expensive and less practical due to its special growth processes for good crystalline quality control. Hence, alternatives to replace h-BN have been suggested: self-assembled monolayer and hydrophobic organic insulating materials. [32,38] We have here chosen an ultrathin organic layer for two n-type TMD FETs: (8.46 nm) polystyrene (PS)-brush poly mer layer which is tethered by chlorosilane end group onto the oxide dielectric. The two TMD devices are n-MoS 2 and n-MoSe 2 FETs as a current driver, to be integrated into low-voltage organic P(VDF-TrFE) piezoelectric sensor circuit with organic light-emitting diode (OLED) indicator. The polymer PS-brush allows a hydrophobic, covalently bonded, ultrathin, and adherent layer directly on hydrophilic SiO 2 or Al 2 O 3 layer, providing hydroxyl group-minimized interface between TMD and dielectric layer. [39][40][41] To the best of our limited knowledge, PSbrush has never been reported for the TMD-based FETs while it is very robust as a conventional organic solvent. It is regarded that a standard lithography and lift-off process can be allowed. As a result, our TMD FETs with PS-brush show minimum hysteresis, but still display depletion mode behavior (V th was still larger than 0 V). Fortunately, the V th of n-MoSe 2 FET appears closer to 0 V than that of n-MoS 2 FETs, and its mobility could increase up to ≈11 cm 2 V −1 s −1 with electron doping by atomic layer deposited (ALD) Al 2 O 3 top layer. [42] When our TMD FETs were integrated into piezoelectric touch sensor circuit which allows instantaneous switching between ≈+5 and −5 V, the Toward any practical applications of 2D transition metal dichalcogenide (TMD) transistors, two issues are often met. First, threshold voltage (V th ) of usual TMD 2D field effect transistors (FETs) is located quite away from 0 V, making the device already on and less practical. Second, a large hysteresis exists during transistor operation. Here, hysteresis-minimized n-TMD FETs are fabricated using polymer-brush/channel...

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Photo‐Stable Organic Thin‐Film Transistor Utilizing a New Indolocarbazole Derivative for Image Pixel and Logic Applications

Cited by 39 publications

References 28 publications

Indolo[3,2‐b]carbazole‐based poly(arylene ethynylene)s through Sonogashira coupling for optoelectronic and sensing applications

Indolo[3,2‐b]carbazole‐based poly(arylene ethynylene)s through Sonogashira coupling for optoelectronic and sensing applications

Deep blue energy harvest photovoltaic switching by heptazole-based organic Schottky diode circuits

2D MoSe₂ Transistor with Polymer‐Brush/Channel Interface

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Photo‐Stable Organic Thin‐Film Transistor Utilizing a New Indolocarbazole Derivative for Image Pixel and Logic Applications

Cited by 39 publications

References 28 publications

Indolo[3,2‐b]carbazole‐based poly(arylene ethynylene)s through Sonogashira coupling for optoelectronic and sensing applications

Indolo[3,2‐b]carbazole‐based poly(arylene ethynylene)s through Sonogashira coupling for optoelectronic and sensing applications

Deep blue energy harvest photovoltaic switching by heptazole-based organic Schottky diode circuits

2D MoSe2 Transistor with Polymer‐Brush/Channel Interface

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2D MoSe₂ Transistor with Polymer‐Brush/Channel Interface