Shift of surface Fermi level position toward the conduction band minimum by crystal defects near GaAs(001) surfaceThe optical absorption of defect centers in SrTiO 3 substrates grown by the Vernuil method are investigated using photoinduced electron paramagnetic resonance ͑photo-EPR͒ at room temperature. As received samples revealed EPR signatures for Fe 3+ , Cr 3+ , Mn 4+ , and an iron-oxygen vacancy complex, Fe 3+ V O . An anneal in dry oxygen at 800°C decreased the intensity of all of the centers except, Mn 4+ . More significantly, the anneal induced a new charge state of Fe, Fe 5+ . Photo-EPR data of the annealed samples were interpreted in terms of two defect levels, the 4+ to 5+ transition of Fe ͑Fe 4+/5+ ͒ at 2.5 eV below the conduction band edge and the 3+ to 4+ transition of the iron-oxygen vacancy complex ͑Fe 3+/4+ V O ͒ at 1.2 eV above the valence band edge. The former is consistent with reported defect levels and the latter provides a modified value based on measurements over a larger portion of the band gap than had been reported previously.