Photoconducting Switches

Joshi, Ravi; Stoudt, D.C.

doi:10.1002/047134608x.w6025

Cited by 5 publications

(2 citation statements)

References 74 publications

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“…Historically, Auston was the first to suggest and probe such photoconductive applications [5]. Many such devices utilize light absorption of energy greater than their bandgap [6][7][8][9][10][11], the so-called extrinsic mode, using materials such as GaAs and lowtemperature grown gallium arsenide (LT-GaAs), InP, GaN, SiC materials, silicon on sapphire, etc. [12][13][14][15][16][17][18][19].…”

Section: Introductionmentioning

confidence: 99%

Density-Dependent Effects on Pulse Compression in GaN Photodetectors Probed by Monte Carlo Studies

2022

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With increases in the demand for faster electronic switching, requirements for higher operating voltages and currents, and the need to perform under harsh environments while operating at even higher frequencies, the research focus in photoconductive semiconductor switch (PCSS) technology has shifted to wide bandgap semiconductors. Here, we examine the possibility of pulse compression in carbon-doped PCSS devices based on the negative differential mobility concept for faster operation. Monte Carlo simulations are used to build in and model various effects on electron transport including degeneracy, charge polarization, and scattering within a three-valley model fitted to bandstructure calculations. The focus is on exploring the density dependence of pulse compression. Thresholds for the biasing fields naturally emerge. Predictive analysis of the output full-width half-maximum (FWHM) current waveforms, as well as the dynamics of the internal charge cloud behavior, and occupancy of the various valleys within GaN are all obtained. Our results show that an increase in carrier density can increase pulse compression and create pulse-widths that are smaller than the FWHM of the input optical excitation. This bodes well for enhanced repetition rates. Variations produced by moving the laser spot along the GaN PCSS length are also examined. Though data for GaN are not yet available, the trends compare well qualitatively with previous reports for GaAs.

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Section: Introductionmentioning

confidence: 99%

Density-Dependent Effects on Pulse Compression in GaN Photodetectors Probed by Monte Carlo Studies

2022

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“…Photoconductive switching is of interest for various electronic applications in the pulsed power arena, [1][2][3][4][5][6][7][8] including microwave and millimeter wave generation, impulse and ultrawideband radar, particle accelerators, and directed energy systems. Advantages of optical switches include: (a) ultrafast response and turn-on times in the picosecond regime limited only by the characteristics of the optical trigger, (b) jitter-free response, (c) isolation between the electrical and optical systems, (d) superior repetitive rates, (e) higher-frequency response and controlled wave-shaping capability, (f) ability to scale to large voltages and currents in a single device without sacrificing speed, and (g) potential selectivity between multiple optical trigger signals based on the wavelength-dependent response of photoconductive switches.…”

Section: Introductionmentioning

confidence: 99%

Lock-on physics in semi-insulating GaAs: Combination of trap-to-band impact ionization, moving electric fields and photon recycling

Dickens

Neuber

et al. 2018

Journal of Applied Physics

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The time-dependent photoconductive current response of semi-insulating GaAs is probed based on one-dimensional simulations, with a focus on the lock-on phenomenon. Our results capture most of the experimental observations. It is shown that trap-to-band impact ionization fuels local field enhancements, and photon recycling also plays an important role in pushing the device towards lock-on above a 3.5 kV/cm threshold field. The results compare well with actual data in terms of the magnitudes, the rise times, and the oscillatory behavior seen at higher currents. Moving multiple domains are predicted, and the response shown depended on the location of the photoexcitation spot relative to the electrodes.

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Analysis of intensity dependent near-bandedge absorption in semi-insulating 4H–SiC for photoconductive switch applications

Meyers

Dickens

Mauch

et al. 2017

J. Phys. D: Appl. Phys.

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Photoconducting Switches

Abstract: The sections in this article are Characteristics of Photoconductive Switches Types of Photoconductive Switches Switch Materials and Their Characteristics Theoretical Considerations Photoconductive Switch Systems

Cited by 5 publications

References 74 publications

Density-Dependent Effects on Pulse Compression in GaN Photodetectors Probed by Monte Carlo Studies

Density-Dependent Effects on Pulse Compression in GaN Photodetectors Probed by Monte Carlo Studies

Lock-on physics in semi-insulating GaAs: Combination of trap-to-band impact ionization, moving electric fields and photon recycling

Analysis of intensity dependent near-bandedge absorption in semi-insulating 4H–SiC for photoconductive switch applications

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