Photocurrent collection in porous semiconductor structures

Rossi, María Cristina; Vincenzoni, R.; Galluzzi, F.

doi:10.1016/0040-6090(95)91138-c

Cited by 3 publications

(2 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…By shifting the inorganic framework to a non-oxidic material, there is the potential to make materials that exhibit novel optoelectronic properties. Some possible uses of such materials include sensing and photocurrent applications …”

Section: Introductionmentioning

confidence: 99%

“…Additionally, the tin-based alloys show smaller band gaps compared to the germanium- or silica-based materials. − There is thus interest in synthesizing analogues to these systems with heavier chalcogenides to further reduce the band gap of these nanostructured materials. Smaller band gap nanostructured materials should be more efficient for use in applications that take advantage of photocurrent generation in semiconductors. ,− …”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Synthesis of Periodic Hexagonal Surfactant Templated Platinum Tin Tellurides: Narrow Band Gap Inorganic/Organic Composites

Riley

Tolbert

2003

J. Am. Chem. Soc.

View full text Add to dashboard Cite

In this work we report the synthesis and characterization of a new nanostructured platinum/tin/telluride inorganic/surfactant composite. The material is synthesized from soluble SnTe(4)(4-) clusters and is shown to have well-defined nanometer scale periodicity along with unique optical properties. Small-angle X-ray scattering indicates that the material forms with a 2D hexagonal honeycomb structure, which is size tunable based on surfactant tail length. Multinuclear EXAFS is used as a probe of local order in these materials. The results indicate that the tetrahedral SnTe(4) unit dimerizes during assembly, and these clusters are coordinated to square planar platinum ions. Near-IR/visible reflectance spectroscopy indicates that the material is a narrow band gap semiconductor with a band gap of 0.8 eV. The extension of the ideas of surfactant templating to a narrow band gap semiconductor opens up the exciting potential for future optoelectronic applications.

show abstract

Section: Introductionmentioning

confidence: 99%