2012
DOI: 10.1038/nphys2493
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Photocurrent measurements of supercollision cooling in graphene

Abstract: The cooling of hot electrons in graphene is the critical process underlying the operation of exciting new graphene-based optoelectronic and plasmonic devices, but the nature of this cooling is controversial. We extract the hot electron cooling rate near the Fermi level by using graphene as novel photothermal thermometer that measures the electron temperature ($T(t)$) as it cools dynamically. We find the photocurrent generated from graphene $p-n$ junctions is well described by the energy dissipation rate $C dT/… Show more

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Cited by 311 publications
(524 citation statements)
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“…Metal nanoparticles are known to dope graphene underneath, which leads to an in-plane electric field in the graphene areas surrounding them 18,20 . It is also known that illumination of such built-in junctions creates long-lived (>1 ps) hot electrons in graphene 24,25 , and these electrons generate a photovoltage 5,26,27 , similar to illumination of semiconducting p-n junctions. The photovoltage V ph in graphene is proportional to its electron temperature, T e .…”
mentioning
confidence: 99%
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“…Metal nanoparticles are known to dope graphene underneath, which leads to an in-plane electric field in the graphene areas surrounding them 18,20 . It is also known that illumination of such built-in junctions creates long-lived (>1 ps) hot electrons in graphene 24,25 , and these electrons generate a photovoltage 5,26,27 , similar to illumination of semiconducting p-n junctions. The photovoltage V ph in graphene is proportional to its electron temperature, T e .…”
mentioning
confidence: 99%
“…It also explains naturally the observed I ∝ P 1/4 dependence. In graphene the electronic temperature depends on illumination power density as 24,27 T e ∝ P 1/n , with n≥3. Accordingly, we obtain V ph ∝ T e ∝ P 1/n and, hence, I ∝ P 1/n .…”
mentioning
confidence: 99%
“…1c) when k B T g ≈ φ/2, dominating over acoustic and optical phonon cooling [12,13] in pristine graphene Schottky junctions; J ⊥ q also overwhelms in-plane (lateral) diffusive energy transport. We find that the values of J ⊥ q are competitive with disorder-assisted cooling [14][15][16] in more dirty devices.Graphene is essential to our proposal due to a unique combination of electronic characteristics. First, fast intraband Auger-type scattering [19,20] allows the absorbed photon energy flux, J in q , to be efficiently captured as heat by ambient carriers in graphene; this process results in a thermalized hot carrier distribution [19,20].…”
mentioning
confidence: 81%
“…These junctions are characterized by Schottky barriers φ that span two orders of magnitude φ ≈ 0.01−1 eV and exhibit in situ control through applied bias or by using gate potentials [7][8][9][10][11]. The wide range of φ achievable across the g/X interface, combined with the unique graphene photoresponse mediated by long-lived hot carriers (elevated electronic temperatures, T g , different from those of the lattice, T 0 [12][13][14][15][16][17]), make graphene Schottky junctions a prime target for accessing novel vertical energy transport regimes [18].…”
mentioning
confidence: 99%
“…In addition, they are very similar in magnitude and in the range of ∼ 1 − 2 ps with sample-to-sample variation within ∼ 20 − 30%. On average, MEG samples exhibit slightly longer relaxation times than sCVDG and pCVDG samples, which can be attributed to a degree of disorder arising from charge impurities, substrate roughness, wrinkling and breaking of the transferred CVDG samples that can provide additional parallel channels for carrier cooling [105,118,119]. However, the relaxation times of some CVDG samples can approach or exceed these of MEG samples, indicating that disorder-assisted electron-phonon (supercollision) cooling is not the dominant cooling mechanism in our high quality graphene samples, but generally provides at most only a modest correction.…”
Section: Highly Doped Graphenementioning
confidence: 99%