Photocurrent of 1eV GaInNAs lattice-matched to GaAs

Band anticrossing in dilute nitrides

“…The mobility of GaN x As 1-x films ranges typically from about ten to a few hundred cm 2 /Vs. 52,53 These values are over an order of magnitude smaller than the electron mobility in GaAs at comparable doping levels. Figure 9 shows the change in roomtemperature mobility of Ga 0.93 In 0.07 N 0.017 As 0.983 :Si with the free electron concentration.…”

“…38 In addition to the enhanced N incorporation, the dilute nitride layers synthesized by N + -implantation followed by PLM-RTA were also found to be thermally stable up to annealing temperature >950°C. This improved sample synthesis technique provides a convenient and reliable method, in addition to conventional epitaxial growth techniques, 2,4,12 for preparing large variety of dilute nitride samples.…”

“…These include a reduction of the fundamental band-gap energy, 1,2 a significant increase in electron effective mass and a decrease in electron mobility. [3][4][5] Furthermore, a new optical transition (E + ) above the fundamental band gap energy has been observed. 6,7 As one quantitative example, the incorporation of only one percent of nitrogen into GaAs induces a strikingly large reduction of 0.18 eV in the fundamental band-gap energy.…”

Effects of structural defects on the activation of sulfur donors in GaNxAs1−x formed by N implantation

“…The effect has been observed experimentally in a large variety if III-N-V alloys including, GaNAs [1][2][3][4], GaInNAs [3,5], GaNP [6,7], InNP [8,9], and AlGaNAs [10] The issue of the N-induced band gap reduction has been addressed by a number of recent theoretical studies [3,[5][6][7][8]. It has been shown, based on the band anticrossing model [11,12] that the N-induced downward shift of the conduction band edge and a large increase of the electron effective mass lead to great improvements of the electrical activation of group VI donors [13].…”

Band anticrossing in highly mismatched group II-VI semiconductor alloys

“…GaN x As 1-x ) in which a small amount (up to ~5%) of the electronegative N substitutes the more metallic column V element, have been extensively studied in recent years because of their unusually large band gap bowing. [1][2][3][4][5][6][7] The strong dependence of the band gap on the N content (~150meV for x~0.01 in GaN x As 1-x ) has made these diluted III-V nitrides important materials for a variety of applications, including long wavelength optoelectronic devices 8,9 and high efficiency hybrid solar cells. 10,11 The unusual properties of the III-N x -V 1-x alloys can be well explained by the recently proposed band anticrossing (BAC) model.…”