Photocurrent self-oscillations in a spatially direct GaAs/AlGaAs superlattice

Tomlinson, A. M.; Fox, A. M.; Cunningham, J. E.; Jan, W. Y.

doi:10.1063/1.124918

Cited by 9 publications

(9 citation statements)

References 11 publications

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“…However, when the frequency decreases with increasing bias within the plateau, the electricfield profile oscillates around an almost uniform stationary state [100], which is typical for a rather low doping density. The bias dependence of the frequency for photocurrent oscillation in undoped, photoexcited SLs was also investigated experimentally by Kwok et al [177], Hosoda et al [227], Mimura et al [228], Ohtani et al [229,230,[241][242][243] and Tomlinson et al [231]. Unfortunately, there is no unique trend observed.…”

Section: Voltage Biasmentioning

confidence: 94%

“…However, the undamped nature of the photocurrent oscillations in these two systems may be connected with the rather long lifetime of electrons in the X state of the AlAs barrier, which at least for the HFD occurs in both samples. Tomlinson et al [231] detected undamped photocurrent oscillations in an undoped GaAs/Al 0.3 Ga 0.7 As SL, where the transport in the LFD as well as HFD is governed by resonant tunnelling between states. Theoretical and experimental investigations of multiple-quantum-well structures have shown that under optical excitation with infrared light, which excites carriers from the lowest conduction subband into continuum states, periodic EFDs are formed due to the excitation of recharging waves [232][233][234].…”

Section: Monopole and Dipole Oscillations In Weakly Coupled Slsmentioning

confidence: 99%

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Non-linear dynamics of semiconductor superlattices

2005

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In the last decade, non-linear dynamical transport in semiconductor superlattices (SLs) has witnessed significant progress in theoretical descriptions as well as in experimentally observed non-linear phenomena. However, until now, a clear distinction between non-linear transport in strongly and weakly coupled SLs was missing, although it is necessary to provide a detailed description of the observed phenomena. In this review, strongly coupled SLs are described by spatially continuous equations and display self-sustained current oscillations due to the periodic motion of a charge dipole as in the Gunn effect for bulk semiconductors. In contrast, weakly coupled SLs have to be described by spatially discrete equations. Therefore, weakly coupled SLs exhibit a more complex dynamical behaviour than strongly coupled ones, which includes the formation of stationary electric field domains, pinning or propagation of domain walls consisting of a charge monopole, switching between stationary domains, self-sustained current oscillations due to the recycling motion of a charge monopole and chaos. This review summarizes the existing theories and the experimentally observed non-linear phenomena for both types of semiconductor SLs.

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Section: Voltage Biasmentioning

confidence: 94%

Section: Monopole and Dipole Oscillations In Weakly Coupled Slsmentioning

confidence: 99%

Non-linear dynamics of semiconductor superlattices

2005

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“…Thereby, the different regions separated by domain walls get unstable and hence cause the oscillations. The resonance frequency can be tuned by the bias voltage or laser power [63,64]. 4.…”

Section: Discussionmentioning

confidence: 99%

Light-Induced Current Oscillations in the Charge-Ordered State of (TMTTF)2SbF6

Peterseim¹,

Dressel²

2017

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Below T CO = 157 K the quasi-one-dimensional charge-transfer salt (TMTTF) 2 SbF 6 undergoes a pronounced phase transition to a charge-ordered ground state. We have explored the non-linear and photoconductive behavior as a function of applied voltage, laser pulse energy and temperature. Besides a decay of the photoconductive signal in a double exponential fashion in the millisecond range, we discover current oscillations in the kHz range induced by the application of short laser pulses. While the resonance frequencies do not depend on voltage or laser intensity and vary only slightly with temperature, the amplitude changes linearly with the laser intensity and voltage. The findings are discussed and compared to comparable phenomena in other low-dimensional electron systems.

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“…Many works were devoted also to studies of domain properties (see, e.g., [2] and references therein). Most of them were performed with weakly doped SLs at low temperatures under strong illumination [2][3][4][5][6][7]. The change in free carrier concentration under illumination gives rise to different domain regimes.…”

mentioning

confidence: 99%