Photocurrent studies of the carrier escape process from InAs self-assembled quantum dots

Chang, Wen‐Hao; Hsu, T. M.; Huang, Chun Che; Hsu, Shu Kun; Lai, C. Y.; Yeh, Nien Tze; Nee, Tzer‐En; Chyi, Jen Inn

doi:10.1103/physrevb.62.6959

Cited by 88 publications

(54 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…In [22], the result was only obtained at LT, since at RT the thermal escape of carriers prevented the detection of TPPC. The issue of the thermal escape of carriers in InAs/GaAs QDs is well known, and it has been demonstrated that at RT the thermal escape of electrons from the IB to the CB is dominant [53], [54]. Although optical excitation of electrons from the IB to the CB is still possible, it occurs with a low probability, since most of them are thermally excited to the CB.…”

Section: ) Subbandgap Spectral Response or Quantum Efficiencymentioning

confidence: 99%

Review of Experimental Results Related to the Operation of Intermediate Band Solar Cells

Ramiro

Martı́

Antolín

et al. 2014

IEEE J. Photovoltaics

View full text Add to dashboard Cite

Abstract-The intermediate band solar cell (IBSC) has drawn the attention of the scientific community as a means to achieve high-efficiency solar cells. Complete IBSC devices have been manufactured using quantum dots, highly mismatched alloys, or bulk materials with deep-level impurities. Characterization of these devices has led, among other experimental results, to the demonstration of the two operating principles of an IBSC: the production of the photocurrent from the absorption of two below bandgap energy photons and the preservation of the output voltage of the solar cell. This study offers a thorough compilation of the most relevant reported results for the variety of technologies investigated and provides the reader with an updated record of IBSC experimental achievements. A table condensing the reported experimental results is presented, which provides information at a glance about achievements, as well as pending results, for every studied technology.

show abstract

Section: ) Subbandgap Spectral Response or Quantum Efficiencymentioning

confidence: 99%

Review of Experimental Results Related to the Operation of Intermediate Band Solar Cells

Ramiro

Martı́

Antolín

et al. 2014

IEEE J. Photovoltaics

View full text Add to dashboard Cite

show abstract

“…Thorough photocurrent studies of the tunnel escape of carriers in QDs embedded in a p-i-n structure can be found in the literature [11,12]. Therein, it is demonstrated that tunneling is the dominant escape process at low temperatures (thermal escape has been suppressed) and that it increases with applied reverse bias.…”

Section: Discussionmentioning

confidence: 99%

Experimental demonstration of the effect of field damping layers in quantum-dot intermediate band solar cells

Ramiro

Antolín

Martı́

et al. 2015

Solar Energy Materials and Solar Cells

View full text Add to dashboard Cite

Intermediate band solar cells must demonstrate the principle of voltage preservation in order to achieve high conversion efficiencies. Tunnel escape of carriers has proved deleterious for this purpose in quantum dot intermediate band solar cells. In previous works, thick spacers between quantum dot layers were demonstrated as a means of reducing tunnel escape, but this approach is unrealistic if a large number of quantum dot layers have to be grown. In this work we report experimental proof that the use of field damping layers is equally effective at reducing tunnel carrier escape, by reducing the potential drop in the QD-stack and the associated electric field. Moreover, we demonstrate that the fact that tunnel carrier escape takes place under short-circuit conditions does not imply that voltage preservation cannot be achieved. We describe a theory that relates the evolution of the tunnel escape to bias voltage and the preservation of the voltage in an IBSC. Temperature and voltage-dependent quantum efficiency measurements, temperature dependent open-circuit voltage measurements and calculations of the internal electric field in IBSCs serve as the basis of the proposed theory.

show abstract

“…In particular, PC spectroscopy is a direct, sensitive, and relatively simple technique, which combines the advantages of both electrical and optical methods of investigation. The PC signal reflects, in part, the optical absorption in the QD layer, but its intensity is governed by the interplay between the recombination and escape rates of photogenerated carriers [9].…”

Section: Introductionmentioning

confidence: 99%

“…For the development of optoelectronic devices based on these structures, such as infrared detectors [6] and emitters [7], it is crucial to study the electronic properties in connection with the transport mechanisms in the QDs. To this scope, a number of techniques has been employed, such as photocurrent (PC) spectroscopy [8][9][10][11], capacitance-voltage (C−V ) characterization [8], and deep-level transient spectroscopy (DLTS) [12]. In particular, PC spectroscopy is a direct, sensitive, and relatively simple technique, which combines the advantages of both electrical and optical methods of investigation.…”

Section: Introductionmentioning

confidence: 99%

Photoelectrical Properties of 1.3μm Emitting InAs Quantum Dots in InGaAs Matrix

et al. 2005

View full text Add to dashboard Cite

We present a study of photoelectrical properties of the StranskiKrastanow InAs quantum dots embedded in an InGaAs matrix with low In content, emitting at about 1.3 µm. The ground-state electron-hole transition of the dots was investigated as a function of the temperature in presence of electric fields parallel and perpendicular to the plane of the dots by photocurrent spectroscopy. Microphotoluminescence measurements were also carried out, allowing us to evidence carrier capture from the GaAs matrix into the dots.

show abstract

Photocurrent studies of the carrier escape process from InAs self-assembled quantum dots

Cited by 88 publications

References 17 publications

Review of Experimental Results Related to the Operation of Intermediate Band Solar Cells

Review of Experimental Results Related to the Operation of Intermediate Band Solar Cells

Experimental demonstration of the effect of field damping layers in quantum-dot intermediate band solar cells

Photoelectrical Properties of 1.3μm Emitting InAs Quantum Dots in InGaAs Matrix

Contact Info

Product

Resources

About