Photoelastic characterization of residual stress in GaAs-wafers

Geiler, H.D.; Karge, H.; Wagner, Matthias; Eichler, S.; Jurisch, M.; Kretzer, U.; Scheffer‐Czygan, M.

doi:10.1016/j.mssp.2006.01.076

Cited by 24 publications

(17 citation statements)

References 8 publications

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“…Using Raman spectroscopy, the distribution of absolute in-plane stresses σR = (σ1 + σ2)/2 (in the polarization direction of the incident beam) [3][4][5][6] and phase transformations can be investigated in detail by analyzing the crystalline silicon (c-Si) peak position and peak width. The Raman spectrum of unstrained c-Si exhibits a sharp and totally symmetrical phonon band peak around the wave number 521 cm −1 [6].…”

Section: Raman Spectroscopymentioning

confidence: 99%

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Characterization of the Diamond Wire Sawing Process for Monocrystalline Silicon by Raman Spectroscopy and SIREX Polarimetry

Würzner

Herms²,

Kaden

et al. 2017

Energies

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Abstract:A detailed approach to evaluate the sub-surface damage of diamond wire-sawn monocrystalline silicon wafers relating to the sawing process is presented. Residual stresses, the presence of amorphous silicon and microcracks are considered and related to diamond wire velocity and cutting ability. In particular, the degree of amorphization of the wafer surface is analyzed, as it may affect the etching performance (texturing) during solar cell manufacture. Raman spectroscopy and Scanning Infrared Stress Explorer (SIREX) measurements are used independently as non-destructive, contactless optical characterization methods to provide stress imaging with high spatial resolution. Raman mappings show that amorphous silicon layers can occur inhomogeneously across the surface of diamond wire-sawn wafers. The Raman and SIREX results reveal a connection between a higher fraction of the amorphous phase, a more inhomogeneous stress distribution and a lower peak maximum of the stress difference on wafers, depending on both the wire wear and the wire velocity. SIREX line scans of the in-plane difference of the principal stress components ∆σ taken across the sawing grooves show significant differences in magnitude and periodicity. Furthermore, the results are compared with the microcrack depth from the same investigation areas. The possibility to optimize the diamond wire sawing processes by analyzing the sub-surface stress of the wafers is offered by complementary use of both Raman and SIREX measurements.

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Section: Raman Spectroscopymentioning

confidence: 99%

“…This allows determining the difference of the in-plane principal stress components ∆σ = σ 1 − σ 2 (see details of the technique in [4]). One can estimate from the results in [3] that there is a lower detection limit of stress differences of about 0.05 MPa.…”

Section: Sirex Polarimetrymentioning

confidence: 99%

Characterization of the Diamond Wire Sawing Process for Monocrystalline Silicon by Raman Spectroscopy and SIREX Polarimetry

Würzner

Herms²,

Kaden

et al. 2017

Energies

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“…This mode is sub-optimal for the detection of very small intensities. In contrast, signal processing and sensitivity of the SIRD and SIREX systems could be significantly improved by the implementation of the ARD (Alternating Retarder Difference) concept (for more details see [4]). As result, both systems are able to visualize stress states down to 1 kPa.…”

Section: Sird and Sirexmentioning

confidence: 99%

Materials characterization and device analysis for evaluation of semiconductor processes by highly‐sophisticated photoelastic stress measurement technique

Herms

Wagner

Молчанов

et al. 2015

Phys. Status Solidi C

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SIRD (Scanning Infrared Depolarization Imager) and SIREX (Scanning Infrared Stress Explorer) are measurement systems to evaluate and visualize the stress distribution in semiconductor materials and devices. Some main fields of application are crystal growth, high temperature processing of silicon wafers as well as the 3D‐structuring of silicon‐based microelectronic devices. The used strategies of measurement are different. SIRD and SIREX are equipped with versatile software packages that allow to separate defect‐related stress states of interest, for instance slip‐lines in GaN‐overgrown silicon. Micro‐holes fabricated for wafer marking and 3D TSV (through silicon vias) structures have been analyzed with micrometer resolution. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…The residual stress at room temperature was evaluated using photoelastic characterization as described in Ref. [26]. Dislocations were revealed by etching in KOH at 370 1C.…”

Section: Article In Pressmentioning

confidence: 99%

Crystal growth by a modified vapor pressure-controlled Czochralski (VCz) technique

Neubert

Rudolph

Frank‐Rotsch

et al. 2008

Journal of Crystal Growth

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Photoelastic characterization of residual stress in GaAs-wafers

Cited by 24 publications

References 8 publications

Characterization of the Diamond Wire Sawing Process for Monocrystalline Silicon by Raman Spectroscopy and SIREX Polarimetry

Characterization of the Diamond Wire Sawing Process for Monocrystalline Silicon by Raman Spectroscopy and SIREX Polarimetry

Materials characterization and device analysis for evaluation of semiconductor processes by highly‐sophisticated photoelastic stress measurement technique

Crystal growth by a modified vapor pressure-controlled Czochralski (VCz) technique

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