Photoelectric properties of F-doped ZnO thin films prepared by sol-combustion

Abstract

In this study, fluorine-doped ZnO (FZO) transparent conductive film was prepared using solcombustion method at a low temperature. The optimized synthesis conditions were evaluated based on the analysis of crystal structure, morphology, and photoelectric properties. The results of X-ray diffraction (XRD), scanning electron microscopy (SEM), UVvisible absorption spectroscopy (UV-vis), and Hall test (HALL) show that under the optimal ratio of precursor solution and optimal doping concentration (10%), the sol-combustion method can produce FZO transparent conductive film with a higher transmittance (80%), higher conductivity (36.9 Ω cm), and better crystalline quality and surface morphology at a relatively low temperature of 250°C. The FZO films produced using sol-combustion method have good application prospect.