Photoelectric properties of higher manganese silicide (HMS)-SilangleMnrangle-M structures

Abstract

Photoelectric properties of (HMS)-Si Mn -M structures, where HMS is higher manganese silicide formed in diffusion doping of silicon with manganese and M is metal contact, have been studied in a wide range of temperatures and light wavelengths.After illumination of these structures with hν = 1.12 eV light at T = 77 K is terminated, the photocurrent decays back to the dark current in a complicated manner, following a curve with two regions. The duration of decay is about several seconds and more than 10 5 s in the first and second regions, respectively.Deep infrared (IR) and temperature quenching of photoconductivity in these structures have been studied.Under illumination with hν 1.12 eV light and at low temperatures these structures can be considered HMS-i-p-M structures, with the i-region playing essential role in the generation of space-charge-limited currents (SCLC).Breakdown of the SCLC mode in these structures by ionization of manganese levels with extra IR light (hν = 0.42−0.6 eV) or by heating results in a sharp decrease of the photocurrent flowing through the structures (especially in the case of temperature quenching in a narrow temperature range T = 15−20 K).

Itinerant Helimagnetic Single-Crystalline MnSi Nanowires

“…Other types of Mn−Si alloys also have been attracting much interest because of their complex structural diversities and intriguing physical properties. A group of semiconducting MnSi 2− x distinguished as higher manganese silicides (HMS) is regarded as promising candidates for possible applications in spintronics, thermoelectrics, and silicon-based optoelectronics. − …”

Influence of structural defects in silicon on formation of photosensitive heterostructures Mn4Si7-Si-Mn4Si7 and Mn4Si7-Si-M

“…If, on cooling, the structure was illuminated with white light, the process was of a different nature, namely: when the temperature of the structure decreased to (170-250) K, the current flow initially decreased by several orders of magnitude relative to the values of current determined at room temperature, after further cooling to 80 K, a sharp increase in the photocurrent values was observed (by 2-3 orders of magnitude higher than the values of the photocurrent taken at room temperature, see Figure 1, curve 4). The photovoltaic-ampere characteristic (PVAC) of the heterostructure had a linear section, a quadratic section and a section of a sharp current increase [7,8]. Such heterostructures were characterized by such photoelectric phenomena as infrared damping, temperature quenching, long-term relaxation of residual conductivity, enhancement of phase transitions, and temperature-electric instabilities [8][9][10].…”

“…The photovoltaic-ampere characteristic (PVAC) of the heterostructure had a linear section, a quadratic section and a section of a sharp current increase [7,8]. Such heterostructures were characterized by such photoelectric phenomena as infrared damping, temperature quenching, long-term relaxation of residual conductivity, enhancement of phase transitions, and temperature-electric instabilities [8][9][10]. It is the heterostructures of the first party of samples (a) doped with manganese that possessed such photoelectric properties.…”

ВЛИЯНИЕ СТРУКТУРНЫХ ДЕФЕКТОВ В КРЕМНИИ НА ФОРМИРОВАНИЕ ФОТОЧУВСТВИТЕЛЬНЫХ ГЕТЕРОСТРУКТУР Mn4Si7−Si<Mn>−Mn4Si7 и Mn4Si7-Si<Mn>−M

“…Фотовольтамперная характеристика (ФВАХ) гетероструктуры имела линейный, квадратичный и участок резкого роста тока [7,8].…”