Photoelectron Diffraction and Holography Studies of 2D Materials and Interfaces

Kuznetsov, M. V.; Огородников, И. Н.; Usachov, Dmitry Yu.; Laubschat, C.; Vyalikh, D. V.; Matsui, Fumihiko; Yashina, Lada V.

doi:10.7566/jpsj.87.061005

Cited by 19 publications

(11 citation statements)

References 67 publications

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“…To obtain further insight into both surface terminations and their atomic structure, we used photoelectron diffraction, a method sensitive to the local structure around an atom of interest. , The corresponding Ge 3d and Te 4d diffraction patterns are shown in Figure . It should be emphasized that for a Te-terminated surface Ge atoms have three Te atoms above with shorter distance, whereas for a Ge-terminated surface Ge atoms (in the third layer) have three Te atoms above with longer distances.…”

Section: Resultsmentioning

confidence: 99%

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Atomic and Electronic Structure of a Multidomain GeTe Crystal

et al. 2020

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Section: Resultsmentioning

confidence: 99%

“…To obtain further insight into both surface terminations and their atomic structure, we used photoelectron diffraction -a method sensitive to the local structure around an atom of interest. 43,44 The corresponding Ge 3d and Te 4d diffraction patterns are shown in Fig. 5.…”

Section: Surface Structure and Terminationmentioning

confidence: 99%

Atomic and Electronic Structure of a Multidomain GeTe Crystal

et al. 2020

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“…To gain a deep insight into the structure of the h-BN/Co(0001) interface we carried out PED measurements of the B 1s and N 1s core levels in angular mode. This technique was successfully applied to study the structure of 2D materials including h-BN monolayer [32,49]. To ensure high sensitivity of PED data to the position of the h-BN layer with respect to the substrate, we used a relatively low photoelectron kinetic energy of 300 eV, at which photoelectron backscattering has a notable contribution to the PED pattern.…”

Section: Resultsmentioning

confidence: 99%

Site- and spin-dependent coupling at the highly ordered h -BN/Co(0001) interface

et al. 2018

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Using photoelectron diffraction and spectroscopy, we explore the structural and electronic properties of the hexagonal boron nitride (h-BN) monolayer epitaxially grown on the Co(0001) surface. Perfect matching of the lattice parameters allows formation of a well-defined interface where the B atoms occupy the hollow sites while the N atoms are located above the Co atoms. The corrugation of the h-BN monolayer and its distance from the substrate were determined by means of R-factor analysis. The obtained results are in perfect agreement with the density functional theory (DFT) predictions. The electronic structure of the interface is characterized by a significant mixing of the h-BN and Co states. Such hybridized states appear in the h-BN band gap. This allows to obtain atomically resolved scanning tunneling microscopy (STM) images from the formally insulating 2D material being in contact with ferromagnetic metal. The STM images reveal mainly the nitrogen sublattice due to a dominating contribution of nitrogen orbitals to the electronic states at the Fermi level. We believe that the high quality, well-defined structure and interesting electronic properties make the h-BN/Co(0001) interface suitable for spintronic applications.

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“…In the X-ray range, the wavelength of the excited photoelectrons is of the order of the atomic distances in the solid. Hence, photoelectron diffraction (PED -also referred to as XPD in the Xray range) [9][10][11][12][13][14][15] influences the observed photoemission signals. This phenomenon is well understood for core-level photoemission, but thus far, data for PED in valence-band photoemission are sparse and results were interpreted analogously to core-level PED after integrating over a larger energy range [16][17][18].…”

Section: Introductionmentioning

confidence: 99%

Momentum-transfer model of valence-band photoelectron diffraction

et al. 2020

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Owing to strongly enhanced bulk sensitivity, angle-or momentum-resolved photoemission using X-rays is an emergent powerful tool for electronic structure mapping. A novel full-field k-imaging method with time-of-flight energy detection allowed rapid recording of 4D (EB,k) data arrays (EB binding energy; k final-state electron momentum) in the photon-energy range of 400-1700eV. Arrays for the d-band complex of several transition metals (Mo, W, Re, Ir) reveal numerous spots of strong local intensity enhancement up to a factor of 5. The enhancement is confined to small (EB,k)-regions (k down to 0.01 Å -1 ; EB down to 200 meV) and is a fingerprint of valence-band photoelectron diffraction. Regions of constructive interference in the (EB,k)-scheme can be predicted in a manner resembling the Ewald construction. A key factor is the transfer of photon momentum to the electron, which breaks the symmetry and causes a rigid shift of the final-state energy isosphere. Working rigorously in k-space, our model does not need to assume a localization in real space, but works for itinerant band states without any assumptions or restrictions. The role of momentum conservation in Fermi's Golden Rule at X-ray energies is revealed in a graphical, intuitive way. The results are relevant for the emerging field of time-resolved photoelectron diffraction and can be combined with standing-wave excitation to gain element sensitivity.

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Photoelectron Diffraction and Holography Studies of 2D Materials and Interfaces

Cited by 19 publications

References 67 publications

Atomic and Electronic Structure of a Multidomain GeTe Crystal

Atomic and Electronic Structure of a Multidomain GeTe Crystal

Site- and spin-dependent coupling at the highly ordered h -BN/Co(0001) interface

Momentum-transfer model of valence-band photoelectron diffraction

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