Photoinduced carrier annihilation in silicon pn junction

Sameshima, Toshiyuki; Motoki, Takayuki; Yasuda, Keisuke; Nakamura, Tomohiko; Hasumi, Masahiko; Mizuno, Toshihisa

doi:10.7567/jjap.54.081302

Cited by 7 publications

(1 citation statement)

References 37 publications

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“…To investigate the electrical conductivity and carrier lifetime, we used a 9.35-GHz-microwave-transmittance measurement system [15], [16]. The system had waveguide tubes, which had a narrow gap where a sample was placed.…”

Section: Model and Experimental Proceduresmentioning

confidence: 99%

Argon Precursor Ion Implantation Used to Activate Boron Atoms in Silicon at Low Temperatures

et al. 2020

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The two-step implantation of argon precursor ion (Ar + ) followed by boron ion (B + ) in single crystalline silicon at room temperature is discussed to activate boron implanted region by post heating at 300 followed by 400 o C. The implantation of Ar + at a dose of 6.0 × 10 13 cm −2 at 70 keV with a projected range R p (Ar) of 80 nm followed by B + at 1.0 × 10 15 cm −2 and 15 keV with R p (B) of 62 nm caused crystalline disordered states with the effective disordered amorphous depth A eff of 32 nm, while the post heating of 300 o C for 90 min followed by 400 o C for 30 min markedly decreased A eff to 1.8 nm. The effective recrystallization by the post heating promoted activation of doped region associated with decrease in the sheet resistivity to 189 /sq by the post heating. The activation ratio was estimated as 0.33 under the assumption of a hole mobility of 50 cm 2 /Vs in the boron implanted region.INDEX TERMS Activation, carrier density, carrier lifetime, defect, low temperature.

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Section: Model and Experimental Proceduresmentioning

confidence: 99%