Photoinduced Dynamical Band Gap in Graphene: The Effects of Electron–Phonon and Spin–Orbit Interaction

Kandemir, B. S.; Akay, Defne

doi:10.1002/pssb.201800163

Cited by 31 publications

(10 citation statements)

References 40 publications

(39 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The scientists received the 2010 Nobel Prize in physics. Since the discovery of the graphene, further researches have been realized on the other 2-dimensional materials because of their extraordinary electronic, optical and chemical properties [2][3][4][5][6][7][8][9]. Main application areas of the 2-dimensional materials are biological engineering, electronics, sensors, optoelectronics, composite materials, medicine, photovoltaic systems and energy storage [10][11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Triangular Potential Effects on the Fermi Velocity Renormalization in 8-Pmmn Borophene

Akay

2019

Journal of Boron

Self Cite

View full text Add to dashboard Cite

A novel mechanism has been reported for the intrinsic electronic properties of the 8-Pmmn borophene to investigate the electronic energy spectrum and spectrum parameters of the structure. To examine the structure, we extract the energy spectrum of the Hamiltonian for the monolayer borophene by using analytical method. Additionally, for the intrinsic properties, first we obtained the bare Fermi velocity which findings of the study are consistent with experimental results. After obtained the bare state Fermi velocity 8-Pmmn borophene, dressed with triangular potential and renormalized Fermi velocity has been obtained. Corresponding renormalized Fermi velocity reshaped with the triangular potential which has non-negligible contribution to the intrinsic properties of borophene. This finding has important implications for developing electronic devices which made from the boron due to increasing the controllability of the structure.

show abstract

Section: Introductionmentioning

confidence: 99%

Triangular Potential Effects on the Fermi Velocity Renormalization in 8-Pmmn Borophene

Akay

2019

Journal of Boron

Self Cite

View full text Add to dashboard Cite

show abstract

“…oxides), for which SOC can reasonably be expected to be weak. Some theoretical studies have addressed the consequences of SOC on EPI in 2D materials [25][26][27], mainly through Rashba-Holstein [28,29] and Rashba-Fröhlich [30,31] model Hamiltonians. To the best of our knowledge, only Trebin and Rössler [32] explicitly investigated the effect of SOC on the Fröhlich polaron for triply-degenerate band extrema in 3D materials.…”

Section: Introductionmentioning

confidence: 99%

Effect of spin-orbit coupling on the zero-point renormalization of the electronic band gap in cubic materials: First-principles calculations and generalized Fröhlich model

2023

View full text Add to dashboard Cite

The electronic structure of semiconductors and insulators is affected by ionic motion through electron-phonon interaction, yielding temperature-dependent band gap energies and zero-point renormalization (ZPR) at absolute zero temperature. For polar materials, the most significant contribution to the band gap ZPR can be understood in terms of the Fröhlich model, which focuses on the non-adiabatic interaction between an electron and the macroscopic electrical polarization created by a long-wavelength optical longitudinal phonon mode. On the other hand, spin-orbit interaction (SOC) modifies the bare electronic structure, which will, in turn, affect the electron-phonon interaction and the ZPR. We present a comparative investigation of the effect of SOC on the band gap ZPR of twenty semiconductors and insulators with cubic symmetry using first-principles calculations. We observe a SOC-induced decrease of the ZPR, up to 30%, driven by the valence band edge, which almost entirely originates from the modification of the bare electronic eigenenergies and the decrease of the hole effective masses near the Γ point. We also incorporate SOC into a generalized Fröhlich model, addressing the Dresselhaus splitting which occurs in non-centrosymmetric materials, and confirm that the predominance of non-adiabatic effects on the band gap ZPR of polar materials is unchanged when including SOC. Our generalized Fröhlich model with SOC provides a reliable estimate of the SOC-induced decrease of the polaron formation energy obtained from first principles and brings to light some fundamental subtleties in the numerical evaluation of the effective masses with SOC for non-centrosymmetric materials. We finally warn about a possible breakdown of the parabolic approximation, one of the most fundamental assumptions of the Fröhlich model, within the physically relevant energy range of the Fröhlich interaction for materials with high phonon frequencies treated with SOC. This is a post-peer-review version of the article published in Physical Review B, which includes the Supplemental Material in the main file.

show abstract

“…Among all two-dimensional (2D) materials, graphene (Gr) is one of the most important owing to its superior features [1][2][3][4][5][6]. Nowadays, due to these superior properties, there is increasing interest in using graphene to replace metal electrodes in semiconductor surfaces in Schottky diode manufacture [7][8][9][10][11].…”

Section: Introductionmentioning

confidence: 99%

The impact of gamma-ray irradiation on temperature-sensitive electrical characteristics of Graphene/Al₂O₃/p-type Si structure

2021

View full text Add to dashboard Cite

In this work, the impact of gamma-ray irradiation (γ) on graphene/Al 2 O 3 /p-type Si structure has been investigated. For this, temperature-sensitive current-voltage (I-V ) analyses of the structure exposed to gamma radiation have been carried out. I-V measurements have been made between −3 V and 3 V to analyze electrical properties of the graphene/Al 2 O 3 /p-type Si before and after 60 Co γirradiation. I-V measurements of the structure have been made at the range of 300 K-405 K. Thermionic emission (TE) theory and Cheung's methods have been used to examine the electrical features of the structure. The discrimination of all experimental results has been done by using Principal Component Analysis (PCA). In PCA analysis, the first two principal components (PC1=75.6% and PC2=20.9%) accounted for 96.5% of the variance, which is a very good result.

show abstract

Photoinduced Dynamical Band Gap in Graphene: The Effects of Electron–Phonon and Spin–Orbit Interaction

Cited by 31 publications

References 40 publications

Triangular Potential Effects on the Fermi Velocity Renormalization in 8-Pmmn Borophene

Triangular Potential Effects on the Fermi Velocity Renormalization in 8-Pmmn Borophene

Effect of spin-orbit coupling on the zero-point renormalization of the electronic band gap in cubic materials: First-principles calculations and generalized Fröhlich model

The impact of gamma-ray irradiation on temperature-sensitive electrical characteristics of Graphene/Al₂O₃/p-type Si structure

Contact Info

Product

Resources

About

Photoinduced Dynamical Band Gap in Graphene: The Effects of Electron–Phonon and Spin–Orbit Interaction

Cited by 31 publications

References 40 publications

Triangular Potential Effects on the Fermi Velocity Renormalization in 8-Pmmn Borophene

Triangular Potential Effects on the Fermi Velocity Renormalization in 8-Pmmn Borophene

Effect of spin-orbit coupling on the zero-point renormalization of the electronic band gap in cubic materials: First-principles calculations and generalized Fröhlich model

The impact of gamma-ray irradiation on temperature-sensitive electrical characteristics of Graphene/Al2O3/p-type Si structure

Contact Info

Product

Resources

About

The impact of gamma-ray irradiation on temperature-sensitive electrical characteristics of Graphene/Al₂O₃/p-type Si structure