Photoinduced laser etching of a diamond surface

Кононенко, В. В.; Комленок, М. С.; Pimenov, S.M.; Konov, V. I.

doi:10.1070/qe2007v037n11abeh013515

Cited by 42 publications

(28 citation statements)

References 10 publications

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“…The two-photon dependence, along with a lack of threshold, is indicative of a material ejection mechanism intrinsically different from usual laser ablation and desorption which rely upon thermal-or plasma-mediated ejection mechanisms. The process is also distinguished from laser ablation of diamond by the absence of graphite formation on the treated surface 18,19 .…”

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confidence: 99%

Two-photon polarization-selective etching of emergent nano-structures on diamond surfaces

2014

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Optical techniques have advanced considerably in recent years to enable processing of surfaces with a resolution less than the wavelength of light. Despite the highly selective nature of light-matter interactions, however, efforts to increase resolution to the scale of single atoms are hampered by rapid and efficient dissipation of the absorbed energy to the surrounding matrix. Here we show that two-photon surface excitation using ultraviolet light provides a method for selectively removing carbon from diamond surfaces. Polished surfaces etched by this method develop ultra-deep subwavelength structures with morphologies dependent on the polarization of the incident laser with respect to the crystal axes. As well as revealing a practical and versatile method for nano-patterning of diamond surfaces, we show that the results comprise mesoscopic evidence for bond scission via a highly localized optical interaction that may lead to the development of new optical approaches for ultra-nanoscale (o10 nm) surface structuring.

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confidence: 99%

Two-photon polarization-selective etching of emergent nano-structures on diamond surfaces

2014

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“…The depth of the crater is only about 30 nm, which is less than the 150 nm film thickness. This is a new example of pulsed laser induced surface oxidation (nanoablation), which was earlier observed for non-conductive diamond samples [13,14]. The average etching rate is only 0.03 nm/pulse, which allows application of a nanoablation process M A N U S C R I P T ACCEPTED MANUSCRIPT 8 for ultra-precise film nanostructuring.…”

Section: Accepted Manuscriptmentioning

confidence: 94%

“…However, this approach is less developed but under intensive study for diamond films [11,12]. For example, recently it has been demonstrated that laser nanoablation is an effective technique for ultra precise removal of single, poly and nanocrystalline (all non-conductive) diamond samples, which are irradiated in air [13,14]. In this work, we present a new technique for laser induced nanostructuring of CNCD films which manifests itself at laser pulse intensities below the laser nanoablation threshold.…”

Section: Accepted Manuscriptmentioning

confidence: 96%

UV laser induced changes to morphological, optical and electrical properties of conductive nanocrystalline diamond films

Комленок

Zaniewski

Zavedeev

et al. 2015

Diamond and Related Materials

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The possibility of laser induced variation of optical and electrical properties of conductive nanocrystalline diamond (CNCD) films has been demonstrated. The films were produced by microwave plasma chemical vapor deposition (MPCVD) from CH 4 :H 2 :N 2 gas mixtures. The films were irradiated in air with 20 ns pulses of an ArF excimer laser (λ = 193 nm). It was found that low laser pulse intensity (~ 0.05 J/cm 2 ), well below film surface graphitization (~ 0.3 J/cm 2 ) and nanoablation (~ 0.08 J/cm 2 ) thresholds, induces changes of the film properties. The effect requires multiple pulsed irradiation and results in a decrease of the film electrical conductivity, which is accompanied by optical bleaching of the diamond film absorption.

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“…The details of the UV absorption in the surface layers and subsequent ejection kinetics are not well understood. A separate group had previously seen signs of this effect (Kononenko et al 2007) and reported that the presence of oxygen is required for etching. An improved understanding of the mechanism is needed to determine how the etching can be prevented or exploited.…”

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confidence: 99%

Average Power and Brightness Scaling of Diamond Raman Lasers

Mildren¹

2012

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Public reporting burden for the collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the collection of information. Send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing this burden, to Washington Headquarters Services, Directorate for Information Operations and Reports, 1215 Jefferson Davis Highway, Suite 1204, Arlington VA 22202-4302. Respondents should be aware that notwithstanding any other provision of law, no person shall be subject to a penalty for failing to comply with a collection of information if it does not display a currently valid OMB control number. REPORT DATE JAN 20132. REPORT TYPE PERFORMING ORGANIZATION NAME(S) AND ADDRESS(ES)Macquarie University,NSW 2109,NSW, Australia,Australia,AU,2109 PERFORMING ORGANIZATION REPORT NUMBER N/A SPONSORING/MONITORING AGENCY NAME(S) AND ADDRESS(ES) AOARD, UNIT 45002, APO, AP, 96338-5002 SPONSOR/MONITOR'S ACRONYM(S) AOARD SPONSOR/MONITOR'S REPORT NUMBER(S) AOARD-104078 DISTRIBUTION/AVAILABILITY STATEMENTApproved for public release; distribution unlimited 13. SUPPLEMENTARY NOTES 14. ABSTRACT Diamond holds substantial promise as a high Raman gain laser material with outstanding power handling capability, yet despite this the highest reported output power from a diamond Raman laser prior to this project was approximately 1 W. This report describes investigations into order‐of‐magnitude power scaling of diamond Raman lasers. The investigations focus on 1064 nm beam conversion of 50 W lasers in the ?external cavity? Raman cavity configuration in both pulsed and continuous wave modes of operation. For pulsed operation, output powers up to 16 W are demonstrated with 40‐50% conversion efficiency from a compact acousto‐optically Q‐switched neodymium pump laser. The output power is similar to the highest achieved by other groups (in diamond and other Raman materials) but with much greater efficiency and using a much simpler overall system. More than 13 W is also demonstrated at the second‐Stokes wavelength at 1.49 micron in the so‐called eye‐safe region, a result which compares well in terms of efficiency as well as power with alternative leading high pulse rate eye‐safe laser technologies. The model‐backed experiments suggest thermal effects are negligible at the current power levels, and much higher output powers are likely when using high power pumps. For CW operation, output powers up to 16 W are demonstrated with conversion efficiency up to 40%. Efficiencies more closely approaching the quantum limit (86%) may be enabled by future improvements in diamond quality. As far as we are aware these are the first demonstrations of CW Raman conversion in a discrete all‐solid‐state system at multi‐watt powers. We show that the concept is applicable for...

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Photoinduced laser etching of a diamond surface

Cited by 42 publications

References 10 publications

Two-photon polarization-selective etching of emergent nano-structures on diamond surfaces

Two-photon polarization-selective etching of emergent nano-structures on diamond surfaces

UV laser induced changes to morphological, optical and electrical properties of conductive nanocrystalline diamond films

Average Power and Brightness Scaling of Diamond Raman Lasers

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