Photoluminescence Analysis of Iron Contamination Effect in Multicrystalline Silicon Wafers for Solar Cells

Tajima, Michio; Ikebe, Masatoshi; Ohshita, Yoshio; Ogura, Atsushi

doi:10.1007/s11664-010-1131-6

Cited by 29 publications

(24 citation statements)

References 19 publications

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“…3,4 During the last decade, much research effort has been invested into understanding the origins of the D-band emission lines, in particular their relation to various types of dislocations and metal contamination. 5 It has been suggested that D1 and D2 lines originate from the a Electronic mail: espen.olsen@umb.no defects produced by the same dislocation processes, and likewise for D3 and D4 lines. The former and the latter defects are, however, believed to be different from each other in nature.…”

Section: Introductionmentioning

confidence: 99%

On the origin of inter band gap radiative emission in crystalline silicon

2012

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Crystal imperfections degrade the quality of multicrystalline silicon wafers by introducing alternative recombination mechanisms. Here we use non-destructive hyperspectral imaging to detect photoluminescence signals from radiatively active recombination processes over the wafer with a highly resolved spectral third dimension. We demonstrate that band-to-band recombination can be visually separated from recombination through traps across the whole surface of a wafer using hyperspectral imaging. Our samples are studied in the near infrared wavelength region, 900-1700 nm, which includes the region of the so called D-band emission lines. These constitute four resolved emission lines found in the photoluminescence spectrum of silicon, commonly related to recombination through shallow inter-band gap energy levels near the conduction- and valence band edges. The shape and structure of these emissions from our measurements suggest that all the D-lines have different origins

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Section: Introductionmentioning

confidence: 99%

On the origin of inter band gap radiative emission in crystalline silicon

2012

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“…[16][17][18][19][20] Oxygen is another major impurity in conjunction with iron that may occur at small-angle grain boundaries, deteriorating the minority carrier lifetime. 21,22 In order to improve the characteristics of silicon substrates for solar cells, such intra-grain defects must be reduced. However, clarifying the generation of these defects is difficult because many crystalline defects occur in multi-crystalline silicon.…”

Section: Introductionmentioning

confidence: 99%

Evaluation of defects generation in crystalline silicon ingot grown by cast technique with seed crystal for solar cells

Tachibana

Sameshima

Kojima

et al. 2012

Journal of Applied Physics

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Although crystalline silicon is widely used as substrate material for solar cell, many defects occur during crystal growth. In this study, the generation of crystalline defects in silicon substrates was evaluated. The distributions of small-angle grain boundaries were observed in substrates sliced parallel to the growth direction. Many precipitates consisting of light elemental impurities and small-angle grain boundaries were confirmed to propagate. The precipitates mainly consisted of Si, C, and N atoms. The small-angle grain boundaries were distributed after the precipitation density increased. Then, precipitates appeared at the small-angle grain boundaries. We consider that the origin of the small-angle grain boundaries was lattice mismatch and/or strain caused by the high-density precipitation. V C 2012 American Institute of Physics. [http://dx

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“…15,16 It makes measurement of defect concentration, using RTPL, possible. Monitoring of surface defect formation during oxidation processes, after wet etching, and epitaxial Si minor carrier diffusion length, by RTPL, has been reported previously.…”

mentioning

confidence: 99%

“…Background boron (B) concentrations of the p − -Si wafers were also measured by SIMS. The background B concentration was constant at ∼1.8 × 10 15 cm −3 for all wafers. No abnormality was found from SIMS analysis.…”

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confidence: 99%

Room Temperature Photoluminescence Characterization of Low Dose As+ Implanted Si after Rapid Thermal Annealing

Yoo¹,

Yoshimoto

Sagara

et al. 2015

ECS Solid State Letters

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Arsenic (As + 150 keV, 1.0 × 10 13 cm −2 ) implanted p − -Si(100) wafers were spike annealed at 1100 • C for 1s in a commercially available rapid thermal annealing (RTA) system. Significant variations in sheet resistance were observed while As dopant profiles, measured by secondary ion mass spectroscopy (SIMS), were almost identical. Photoluminescence (PL) spectra were measured from all wafers under three different excitation wavelengths (532, 650 and 827 nm) at room temperature. PL spectra showed large intensity variation, corresponding to the sheet resistance. PL excitation wavelength dependence suggests the variation in density of residual damage as the possible cause of sheet resistance variation. Charge coupled devices (CCDs) have been widely used in scientific instruments and digital cameras until recently.1 The gate structure used in CCDs to transfer electrical charges (image data) to the edge of the sensor, requires a separate power source (more power) and sequential data transfer (slower speed). 2,3For portable device applications, smaller devices with low power consumption are strongly desired. Complementary metal-oxidesemiconductor (CMOS) image sensors, with reduced power consumption and fast data transfer, have become a common alternative choice for image sensors.3 These devices consist of large arrays of photodiodes and amplifiers. The photodiodes accumulate electrical charge and increase voltage when exposed to light. The voltage is amplified and transmitted as electrical signals. Since the CMOS image sensors have the same basic structure as CMOS memory devices, they are cost effectively mass produced, using well-established manufacturing technology. 1Generally, CMOS image sensors generate more electrical noise than CCDs and can result in poor image quality due to performance fluctuations in the large array of photodiodes and amplifiers.3 Small performance differences in photodiodes and amplifiers can result in noise in the output image. The noise problem increases as cell size is reduced and the number of cells in a chip increases. Noise reduction approaches commonly used to overcome this problem are; improved device level performance variation and reduction of the variation of background noise. Device-level noise reduction efforts are also becoming increasingly important. 4 High energy, low dose ion implant conditions are often used in CMOS image sensor fabrication processes. Average dopant concentration in the implanted junctions are 2 ∼ 3 orders of magnitude lower than those of advanced CMOS logic and memory devices. Small amounts of defects and residual damage have a significant impact in the electrical properties of implanted junctions after RTA. To reduce noise in CMOS image sensors, elimination of defects and residual damage are very important steps. The room temperature photoluminescence (RTPL) technique can be used for finding and reducing the electrically active and/or non-radiative defects and damage in the early stage of CMOS image sensor fabrication steps.It is well known that metal c...

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Photoluminescence Analysis of Iron Contamination Effect in Multicrystalline Silicon Wafers for Solar Cells

Cited by 29 publications

References 19 publications

On the origin of inter band gap radiative emission in crystalline silicon

On the origin of inter band gap radiative emission in crystalline silicon

Evaluation of defects generation in crystalline silicon ingot grown by cast technique with seed crystal for solar cells

Room Temperature Photoluminescence Characterization of Low Dose As+ Implanted Si after Rapid Thermal Annealing

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