Photoluminescence and carrier transport mechanisms of silicon-rich silicon nitride light emitting device

Liao, Wugang; Zeng, Xiangbin; Yao, Wei; Wen, Xixing

doi:10.1016/j.apsusc.2015.06.050

Cited by 12 publications

(4 citation statements)

References 41 publications

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“…This approach has been well established for silicon nanocrystals in SiO 2 matrix. However, most of the Si-NCs and superlattices in previous studies are fabricated by chemical vapor deposition (CVD) [18,19,20], sputtering [21,22,23], or other deposition techniques [24], these techniques are good at depositing thick film but weak in thin film. Which hamper the further study on the control of Si-NCs in superlattice with ultrathin dielectric film or barrier layer.…”

Section: Introductionmentioning

confidence: 99%

Systematic Study of the SiOx Film with Different Stoichiometry by Plasma-Enhanced Atomic Layer Deposition and Its Application in SiOx/SiO2 Super-Lattice

Yang

et al. 2019

Nanomaterials

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Atomic scale control of the thickness of thin film makes atomic layer deposition highly advantageous in the preparation of high quality super-lattices. However, precisely controlling the film chemical stoichiometry is very challenging. In this study, we deposited SiOx film with different stoichiometry by plasma enhanced atomic layer deposition. After reviewing various deposition parameters like temperature, precursor pulse time, and gas flow, the silicon dioxides of stoichiometric (SiO2) and non-stoichiometric (SiO1.8 and SiO1.6) were successfully fabricated. X-ray photo-electron spectroscopy was first employed to analyze the element content and chemical bonding energy of these films. Then the morphology, structure, composition, and optical characteristics of SiOx film were systematically studied through atomic force microscope, transmission electron microscopy, X-ray reflection, and spectroscopic ellipsometry. The experimental results indicate that both the mass density and refractive index of SiO1.8 and SiO1.6 are less than SiO2 film. The energy band-gap is approved by spectroscopic ellipsometry data and X-ray photo-electron spectroscopy O 1s analysis. The results demonstrate that the energy band-gap decreases as the oxygen concentration decreases in SiOx film. After we obtained the Si-rich silicon oxide film deposition, the SiO1.6/SiO2 super-lattices was fabricated and its photoluminescence (PL) property was characterized by PL spectra. The weak PL intensity gives us greater awareness that more research is needed in order to decrease the x of SiOx film to a larger extent through further optimizing plasma-enhanced atomic layer deposition processes, and hence improve the photoluminescence properties of SiOx/SiO2 super-lattices.

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Section: Introductionmentioning

confidence: 99%

Systematic Study of the SiOx Film with Different Stoichiometry by Plasma-Enhanced Atomic Layer Deposition and Its Application in SiOx/SiO2 Super-Lattice

Yang

et al. 2019

Nanomaterials

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“…Although there are many advantages of using the ALD technique in this area, there is still a lot of challenges that should be captured. First of all, most of the SiNCs and superlattices in previous studies are fabricated by CVD [23,24,25], sputtering [26,27,28], or other deposition techniques [29], there are few researches using ALD to fabricate superlattices. Besides, it is inevitable that there always exist oxygen defects or oxygen concentration in SiN x deposition.…”

Section: Introductionmentioning

confidence: 99%

Measurements of Microstructural, Chemical, Optical, and Electrical Properties of Silicon-Oxygen-Nitrogen Films Prepared by Plasma-Enhanced Atomic Layer Deposition

Yang

et al. 2018

Nanomaterials

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In this study, silicon nitride (SiNx) thin films with different oxygen concentration (i.e., SiON film) were precisely deposited by plasma enhanced atomic layer deposition on Si (100) substrates. Thus, the effect of oxygen concentration on film properties is able to be comparatively studied and various valuable results are obtained. In detail, x-ray reflectivity, x-ray photoelectron spectroscopy, atomic force microscopy, and spectroscopic ellipsometry are used to systematically characterize the microstructural, optical, and electrical properties of SiON film. The experimental results indicate that the surface roughness increases from 0.13 to 0.2 nm as the oxygen concentration decreases. The refractive index of the SiON film reveals an increase from 1.55 to 1.86 with decreasing oxygen concentration. Accordingly, the band-gap energy of these films determined by oxygen 1s-peak analysis decreases from 6.2 to 4.8 eV. Moreover, the I-V tests demonstrate that the film exhibits lower leakage current and better insulation for higher oxygen concentration in film. These results indicate that oxygen affects microstructural, optical, and electrical properties of the prepared SiNx film.

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“…15,16 In an analogous manner, SiN x and SiC y thin films are successfully incorporated into active optical and optoelectronic devices due to their wide bandgap (2.3 eV for SiC y and 5.1 eV for SiN x ), and elevated electrical breakdown voltage, including panel displays, lighting, and light-emitting devices. 4,[17][18][19] In this respect, both types of Si-based coatings are employed as permeation barriers and encapsulation layers in light-emitting devices (LEDs), and organic LEDs (OLEDs), [20][21][22][23] as well as in the fabrication of various planar optical systems and optical waveguides. 24 Additionally, SiN x C y and SiN x coatings are used or suggested as passivation layers in flexible electroluminescent devices.…”

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confidence: 99%

Review—Silicon Nitride and Silicon Nitride-Rich Thin Film Technologies: Trends in Deposition Techniques and Related Applications

Kaloyeros

Jové

Goff

et al. 2017

ECS J. Solid State Sci. Technol.

133

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This article provides an overview of the state-of-the-art chemistry and processing technologies for silicon nitride and silicon nitride-rich films, i.e., silicon nitride with C inclusion, both in hydrogenated (SiNx:H and SiNx:H(C)) and non-hydrogenated (SiNx and SiNx(C)) forms. The emphasis is on emerging trends and innovations in these SiNx material system technologies, with focus on Si and N source chemistries and thin film growth processes, including their primary effects on resulting film properties. It also illustrates that SiNx and its SiNx(C) derivative are the focus of an ever-growing research and manufacturing interest and that their potential usages are expanding into new technological areas.

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Photoluminescence and carrier transport mechanisms of silicon-rich silicon nitride light emitting device

Cited by 12 publications

References 41 publications

Systematic Study of the SiOx Film with Different Stoichiometry by Plasma-Enhanced Atomic Layer Deposition and Its Application in SiOx/SiO2 Super-Lattice

Systematic Study of the SiOx Film with Different Stoichiometry by Plasma-Enhanced Atomic Layer Deposition and Its Application in SiOx/SiO2 Super-Lattice

Measurements of Microstructural, Chemical, Optical, and Electrical Properties of Silicon-Oxygen-Nitrogen Films Prepared by Plasma-Enhanced Atomic Layer Deposition

Review—Silicon Nitride and Silicon Nitride-Rich Thin Film Technologies: Trends in Deposition Techniques and Related Applications

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