Photoluminescence from deep acceptor-deep donor complexes in CdTe

Krustok, J.; Collan, H.; Hjelt, K.; Mädasson, J.; Valdna, V.

doi:10.1016/s0022-2313(97)00061-6

Cited by 21 publications

(8 citation statements)

References 1 publication

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“…The preliminary analysis of this band reveals that the wide band and its intensity strongly depend on Cd/Te overpressure ratio and at least two elemental component exists at 1.042 eV and 1.126 eV. These results are consistent with the ones presented in [19]. It is expected that the bands are determined by CB to Te i 2transitions and Cd i 2+ to Te i 2or V Te + to Te i -.…”

Section: Pl In 08-125 Ev Regionsupporting

confidence: 88%

Radiative recombination mechanisms in CdTe thin films deposited by elemental vapor transport

et al. 2015

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A photoluminesence (PL) study of the radiative recombination mechanisms for CdTe films deposited under different Cd and Te overpressure by elemental vapor transport is presented. The experiment and analysis have been carried out in the temperature range of 12-130K. The intensity of the PL laser excitation beam was varied by two orders of magnitude. It has been established that the bands in the 1.47-1.50 eV are determined by transitions involving shallow D and A states and the 1.36x-1.37x eV band is due to band to level transitions. Deep transitions at 1.042 eV and 1.129 eV are due to radiative transitions to levels determined by CdTe native defects.

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Section: Pl In 08-125 Ev Regionsupporting

confidence: 88%

Radiative recombination mechanisms in CdTe thin films deposited by elemental vapor transport

et al. 2015

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“…For example, deep center luminescence in the 0.7 eV spectra region is found by Krustok et al in a direct gap II-VI compound CdTe:Cu:Cl, which is prepared by high-temperature melt followed by quenching to room temperature. 18 Since the rapid cooling promotes a formation of defects such as an interstitial Cu i , they assume that the Cu i is a deep donor and that it forms a DA pair with a deep acceptor on the Cd site. These DA pairs are responsible for the PL emission in the 0.7 eV spectra region.…”

Section: Luminescence In Cubr Nanocrystalsmentioning

confidence: 99%

Photoluminescence of I‐VII Semiconductor Compounds. Sensitized Luminescence from “Deep States” Recombination in CuBr/AgBr Nanocrystals

Hwang

Wei

Hsia

et al. 2006

J Chinese Chemical Soc

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The photoluminescence (PL) properties of CuBr and CuBr/AgBr semiconductor nanocrystals (NCs) embedded in borosilicate glasses are measured under band‐to‐band excitation by a 355‐nm Nd YAG laser. We observed emission from CuBr (peaked at 520 nm) doped glass, which is associated with deep states in CuBr NCs. We also observed the sensitized blue to orange‐red emission in CuBr/AgBr‐glass systems (peaked at 520 and 570 nm), in which the luminescence intensity of CuBr decreases with increasing AgBr concentrations, while it is enhanced significantly around 570 nm. The results are discussed by the possible energy transfer between them, or by the multi‐exitonic recombination process which ejects an excited carrier from CuBr to AgBr NCs.

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“…81 The PL bands at 1.24 eV and 0.94 eV were thought to originate from donor-acceptor defect pair recombination. 93 The 1.24 eV band results from more distant donor-acceptor pairs (shallowest single acceptor defect Se Sb formed at a depth of about 0.1 eV). The 0.94 eV band originates from deep donor-deep acceptor recombination, where the donor and acceptor defects occupy the closest Se and Sb sites in the lattice (Sb 1 -Se 3 sites).…”

Section: Intrinsic Defectsmentioning

confidence: 99%