Photoluminescence from single isoelectronic traps in nitrogen delta-doped GaAs grown on GaAs(111)A

Fukushima, Toshiyuki; Hijikata, Yasuto; Yaguchi, Hiroyuki; Yoshida, Sadafumi; Okano, Masaya; Yoshita, Masahiro; Akiyama, Hidefumi; Kuboya, Shigeyuki; Katayama, Ryuji; Onabe, Kentaro

doi:10.1016/j.physe.2009.12.011

Cited by 15 publications

(10 citation statements)

References 15 publications

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“…Somewhat large spatial distribution (~5 μm) of the emission in this map is probably attributed to the diffusion of exciton. Figure 4 (b) but also emission lines observed from an individual isoelectronic traps formed by other NN pairs, such as NN D [18] was always composed of a single peak with a small linewidth. Therefore, the single-peak character is a common feature for nitrogen δ-doped GaAs grown on (111)A substrate, which is completely different from the case of grown on (001) substrate, where twin PL peaks were always observed from individual isoelectronic traps irrespective of the atomic configuration of NN pairs [17] as mentioned before.…”

Section: Results and Discussion 31 Nitrogen δ-Doped Layer Grown On Gmentioning

confidence: 87%

“…Thus, we have studied luminescence from individual isoelectronic traps formed by NN pairs in GaAs:N to demonstrate the potential for the single-photon emitters. In our previous papers [16][17][18], we have succeeded in observing exciton emission lines from individual isoelectronic traps formed by NN pairs in nitrogen δ-doped GaAs layers with low nitrogen concentrations. In the present paper, we have studied the emission from individual isoelectronic traps formed by NN pairs in nitrogen delta (δ)-doped GaAs grown on (001) and (111)A substrates.…”

Section: Introductionmentioning

confidence: 99%

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Single photon emission from nitrogen delta-doped semiconductors

Yaguchi

2011

Quantum Sensing and Nanophotonic Devices VIII

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Isolated isolectronic traps in semiconductors are promising candidates for single-photon emitters because sharp emission lines with well-defined wavelengths are readily obtained. In this work, we study the emission from individual isoelectronic traps formed by nitrogen-nitrogen pairs in nitrogen delta (δ)-doped GaAs grown on (001) and (111)A substrates. We have found there is a remarkable difference in the polarization properties of luminescence for between (001) and (111) substrates, and successfully obtained unpolarized single photons by utilizing (111) substrate, which are desirable for the application to quantum cryptography. Unpolarized photons could also be obtained from nitrogen δ-doped GaAs/AlGaAs heterostructures grown on (001) substrates.

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Section: Results and Discussion 31 Nitrogen δ-Doped Layer Grown On Gmentioning

confidence: 87%

Section: Introductionmentioning

confidence: 99%

Single photon emission from nitrogen delta-doped semiconductors

Yaguchi

2011

Quantum Sensing and Nanophotonic Devices VIII

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“…[1][2][3][4][5][6][7] In particular, behavior of conduction band edge of GaN x As 1−x (GaNAs) with small x attracts wide attention. [8][9][10] As well known, the band gap of GaNAs decreases with nitrogen concentration. This is contrary to the conventional Begard's law, that is, band gap of a mixed compound is well described as a linear interpolation of band gaps of constituent materials.…”

Section: Introductionmentioning

confidence: 86%

Reduced Hamiltonian for Electronic States of Dilute Nitride Semiconductors

Morifuji¹,

Ishikawa²

2014

Preprint

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We present a novel model to describe conduction band of GaN x As 1−x (GaNAs). As well known, GaNAs shows exotic behavior such as large band gap bowing. Although there are various models to describe the conduction band of GaNAs, origin of the band gap bowing is still under debate. On the basis of perturbation theory, we show that the behavior of conduction band is mainly arising from intervalley mixing between Γ and L or X. By using renormalization technique and group theoretical treatment, we derive a reduced Hamiltonian which describes well the band gap shrinkage of GaNAs.

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“…[8][9][10] In addition to the prospect for device applications, their properties which are largely different from other semiconductors, also evoke much interest. [11][12][13] In particular, large band gap bowing is a problem still under debate. Usually, band gap of a mixed compound is well described as a linear interpolation of band gaps of the constituent materials.…”

Section: Introductionmentioning

confidence: 99%

Perturbation analysis on large band gap bowing of dilute nitride semiconductors

Morifuji

Ishikawa

2016

Physica B: Condensed Matter

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Contrary to the conventional empirical law, band gap of dilute nitride semiconductors decreases with nitrogen concentration. In spite of a number of investigations, origin of this "large band gap bowing", is still under debate. In order to elucidate this phenomenon, we investigate change of band edge energies of GaN x As 1−x due to nitrogen by using the perturbation theory. It is found that energy shift of conduction band edge is arising from mixing between Γ-and L-states and/or Γ-and X-states induced by displacement of Ga atoms around N. We also found that the valence band edge state shows upward shift in spite of negative potential of nitrogen. These results are well understood from character of the wavefunctions and symmetry of the perturbation potential.

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Photoluminescence from single isoelectronic traps in nitrogen delta-doped GaAs grown on GaAs(111)A

Cited by 15 publications

References 15 publications

Single photon emission from nitrogen delta-doped semiconductors

Single photon emission from nitrogen delta-doped semiconductors

Reduced Hamiltonian for Electronic States of Dilute Nitride Semiconductors

Perturbation analysis on large band gap bowing of dilute nitride semiconductors

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