Perturbation analysis on large band gap bowing of dilute nitride semiconductors

Morifuji, Masato; Ishikawa, Fumitaro

doi:10.1016/j.physb.2016.01.018

Cited by 5 publications

(5 citation statements)

References 27 publications

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“…Recently, the possible use of dilute nitrides in spintronics has also been proposed 37 . Indeed, the introduction of nitrogen in GaAs, and in other III-V semiconductors, strongly perturbs the conduction band structure, giving rise, among other effects, to a large, tunable reduction of the band gap 38,39 and to the modification of the electron g-factor 40 . For instance, the band gap of GaAs 0.989 N 0.011 is about 1.29 eV at 10 K, about 230 meV lower than the GaAs band gap value 41,42 , while the electron g-factor rises to a value of about 1 (being −0.44 in GaAs) already for a nitrogen concentration of 0.1% 40 .…”

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Site‐Controlled Single‐Photon Emitters Fabricated by Near‐Field Illumination

et al. 2018

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Many of the most advanced applications of semiconductor quantum dots (QDs) in quantum information technology require a fine control of the QDs' position and confinement potential, which cannot be achieved with conventional growth techniques. Here, a novel and versatile approach for the fabrication of site-controlled QDs is presented. Hydrogen incorporation in GaAsN results in the formation of N-2H and N-2H-H complexes, which neutralize all the effects of N on GaAs, including the N-induced large reduction of the bandgap energy. Starting from a fully hydrogenated GaAs/GaAsN:H/GaAs quantum well, the NH bonds located within the light spot generated by a scanning near-field optical microscope tip are broken, thus obtaining site-controlled GaAsN QDs surrounded by a barrier of GaAsN:H (laterally) and GaAs (above and below). By adjusting the laser power density and exposure time, the optical properties of the QDs can be finely controlled and optimized, tuning the quantum confinement energy over more than 100 meV and resulting in the observation of single-photon emission from both the exciton and biexciton recombinations. This novel fabrication technique reaches a position accuracy <100 nm and it can easily be applied to the realization of more complex nanostructures.

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confidence: 99%

Site‐Controlled Single‐Photon Emitters Fabricated by Near‐Field Illumination

et al. 2018

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“…Even though the physical insights remain controversial, the great fit for the experimental data provides practical benefits for the technical treatment of those band changes, further allowing expectation of band structures of GaNAs materials with an unachieved composition range. 9,[24][25][26][27][28] Finally, the original and modified BAC models for GaNAs HMAs are thoroughly compared and the partially polycrystalline GaNAs alloys are demonstrated in the middle composition range. The obtained results improve the growth of GaNAs HMAs with different substrates and should expedite studies of high-efficiency multijunction solar cells fabricated using such a single ternary alloy system.…”

Section: Resultsmentioning

confidence: 99%

Partially polycrystalline GaN₁₋_xAs_xalloys grown on GaAs in the middle composition range achieving a smaller band gap

Lin

Liu

et al. 2017

Jpn. J. Appl. Phys.

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GaN1−xAsx alloys have been successfully grown on (100) GaAs substrates over a wide composition range (0.15 < x < 0.98) by plasma-assisted molecular beam epitaxy. In the middle composition range, the weak and broad (111) diffraction peaks are observed in the X-ray diffraction patterns. These diffraction peaks most likely come from small crystalline grains within the amorphous matrix and are unlike the entirely amorphous GaNAs alloys grown on sapphire and Pyrex glass. A transmission electron microscopy micrograph of the GaN0.50As0.50 alloy also shows a weak periodic structure consisting of small polycrystalline grains. To study the band gap and the As-affected spin–orbit band to conduction-band minimum transition, photomodulated reflectance is utilized. The band gap energies range from 0.78 to 2.15 eV (3.4 eV for end-point compounds GaN). Finally, the original and modified band anticrossing (BAC) models for GaNAs alloys were thoroughly verified over the entire composition range. Remarkably, the band gap energies of the partially polycrystalline GaNAs alloys agree well with those obtained using the original BAC model in the middle composition range because the model has been developed for crystalline materials. These results improve the growth of highly mismatched GaNAs alloys with different substrates and should expedite studies of high-efficiency multijunction solar cells fabricated using such a single ternary alloy system.

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“…This shift can be explained by the increase in electron charge density of the In atoms that is caused by the reduction in the interactions between In and the surrounding atoms 39 . Because the conduction band edge basically originates from the s -orbitals of the group-III elements in the III-V semiconductor, the reduced interactions between the group-III In atoms and the surrounding atoms may induce a reduction in the group-V N-induced band gap modifications 40 . The modified electronic states of the group-III In can thus explain the blueshift that occurs in this material system after annealing.…”

Section: Discussionmentioning

confidence: 99%

Annealing induced atomic rearrangements on (Ga,In) (N,As) probed by hard X-ray photoelectron spectroscopy and X-ray absorption fine structure

Ishikawa

Higashi

Fuyuno

et al. 2018

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We study the effects of annealing on (Ga0.64,In0.36) (N0.045,As0.955) using hard X-ray photoelectron spectroscopy and X-ray absorption fine structure measurements. We observed surface oxidation and termination of the N-As bond defects caused by the annealing process. Specifically, we observed a characteristic chemical shift towards lower binding energies in the photoelectron spectra related to In. This phenomenon appears to be caused by the atomic arrangement, which produces increased In-N bond configurations within the matrix, as indicated by the X-ray absorption fine structure measurements. The reduction in the binding energies of group-III In, which occurs concomitantly with the atomic rearrangements of the matrix, causes the differences in the electronic properties of the system before and after annealing.

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Perturbation analysis on large band gap bowing of dilute nitride semiconductors

Cited by 5 publications

References 27 publications

Site‐Controlled Single‐Photon Emitters Fabricated by Near‐Field Illumination

Site‐Controlled Single‐Photon Emitters Fabricated by Near‐Field Illumination

Partially polycrystalline GaN₁₋_xAs_xalloys grown on GaAs in the middle composition range achieving a smaller band gap

Annealing induced atomic rearrangements on (Ga,In) (N,As) probed by hard X-ray photoelectron spectroscopy and X-ray absorption fine structure

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Perturbation analysis on large band gap bowing of dilute nitride semiconductors

Cited by 5 publications

References 27 publications

Site‐Controlled Single‐Photon Emitters Fabricated by Near‐Field Illumination

Site‐Controlled Single‐Photon Emitters Fabricated by Near‐Field Illumination

Partially polycrystalline GaN1−xAsxalloys grown on GaAs in the middle composition range achieving a smaller band gap

Annealing induced atomic rearrangements on (Ga,In) (N,As) probed by hard X-ray photoelectron spectroscopy and X-ray absorption fine structure

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Partially polycrystalline GaN₁₋_xAs_xalloys grown on GaAs in the middle composition range achieving a smaller band gap